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Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/338
출원번호 US-0723710 (2000-11-28)
발명자 / 주소
  • Singh, Ranbir
출원인 / 주소
  • Cree, Inc.
대리인 / 주소
    Myers Bigel Sibley & Sajovec, P.A.
인용정보 피인용 횟수 : 29  인용 특허 : 30

초록

Edge termination for a silicon carbide Schottky rectifier is provided by including a silicon carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adjacent a Schottky contact of the silicon carbide Schottky rectifier. The silicon carbide epitaxial layer may have a thickn

대표청구항

Edge termination for a silicon carbide Schottky rectifier is provided by including a silicon carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adjacent a Schottky contact of the silicon carbide Schottky rectifier. The silicon carbide epitaxial layer may have a thickn

이 특허에 인용된 특허 (30)

  1. Edmond John A. (Apex NC), Blue light emitting diode formed in silicon carbide.
  2. Bakowski Mietek,SEX ; Gustafsson Ulf,SEX, Depletion region stopper for PN junction in silicon carbide.
  3. Pfirsch Frank,DEX ; Rupp Roland,DEX, Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode.
  4. Bakowski Mietek,SEX ; Gustafsson Ulf,SEX ; Rottner Kurt,SEX ; Savage Susan,SEX, Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge.
  5. Takada Jun (Kasugai JPX) Yamaguchi Minori (Akashi JPX) Tawada Yoshihisa (Kobe JPX), Heat-resistant thin film photoelectric converter.
  6. MacIver ; Bernard A., Ion implanted Schottky barrier diode.
  7. Bakowski Mietek,SEX ; Gustafsson Ulf,SEX, Junction termination for SiC Schottky diode.
  8. Amemiya Yoshihito (Fuchu JPX) Mizushima Yoshihiko (Fuchu JPX), Low loss and high speed diodes.
  9. Ueno Katsunori,JPX ; Urushidani Tatsuo,JPX ; Hashimoto Koichi,JPX ; Ogino Shinji,JPX ; Seki Yasukazu,JPX, Manufacturing method of SiC Schottky diode.
  10. Palmour John W. (Raleigh NC), Metal-insulator-semiconductor capacitor formed on silicon carbide.
  11. Losehand Reinhard,DEX ; Werthmann Hubert,DEX, Method for producing a Schottky diode assembly formed on a semiconductor substrate.
  12. Nilsson Per-.ANG.ke,SEX, Method for producing a pn-junction for a semiconductor device of SiC.
  13. Parsons James D. (Newbury Park CA), Method of making ohmic contact structure.
  14. Papanicolaou Nicolas A. (Silver Spring MD), Platinum and platinum silicide contacts on b 상세보기
  • Suzuki Akira (Nara JPX) Furukawa Katsuki (Osaka JPX), Process for producing a SiC semiconductor device.
  • Einthoven Willem G. (Belle Mead NJ), Schottky barrier device and method of manufacture.
  • Einthoven Willem G. (Belle Mead NJ), Schottky barrier device with doped composite guard ring.
  • Iesaka Susumu (Tokyo JPX), Schottky barrier diode with guard ring.
  • Losehand Reinhard,DEX ; Werthmann Hubert,DEX, Schottky diode assembly and production method.
  • Ellwanger Russell C. (Orem UT), Schottky-type rectifier having controllable barrier height.
  • Mitlehner Heinz,DEX ; Stephani Dietrich,DEX ; Weinert Ulrich,DEX, Semiconductor component having an edge termination means with high field blocking capability.
  • Ishihara Shin-ichiro (Moriguchi JPX) Mori Koshiro (Osaka JPX) Tanaka Tsuneo (Nishinomiya JPX) Nagata Seiichi (Sakai JPX) Fukai Masakazu (Nishinomiya JPX), Semiconductor device and method of manufacturing the same.
  • Konstantinov Andrey,SEX, Semiconductor device with a junction termination and a method for production thereof.
  • Bakowsky Mietek,SEX ; Bijlenga Bo,SEX ; Gustafsson Ulf,SEX ; Harris Christopher,SEX ; Savage Susan,SEX, SiC Semiconductor device comprising a pn Junction with a voltage absorbing edge.
  • Bakowski Mietek,SEX ; Gustafsson Ulf,SEX ; Harris Christopher I.,SEX, SiC semiconductor device comprising a pn junction.
  • Bakowski Mietek,SEX ; Gustafsson Ulf,SEX ; Rottner Kurt,SEX ; Savage Susan,SEX, SiC semiconductor device comprising a pn junction with a voltage absorbing edge.
  • Baliga Bantval Jayant, Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein.
  • Weaver Carson E. (Tewksbury MA) Hower Philip L. (Concord MA), Structure for fast-recovery bipolar devices.
  • Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
  • Kobayashi Hiroshi (Hino JPX) Sato Taxay (Hino JPX) Menjo Hiroshi (Hino JPX) Nishi Shinichi (Hino JPX) Watanabe Hideo (Hino JPX), Thin film Schottky barrier device.
  • 이 특허를 인용한 특허 (29)

    1. Ryu, Sei-Hyung; Agarwal, Anant K.; Ward, Allan, Edge termination structures for silicon carbide devices.
    2. Shah,Pankaj B., Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device.
    3. Singh,Ranbir, Lateral channel transistor.
    4. Singh,Ranbir, Lateral drift vertical metal-insulator semiconductor field effect transistor.
    5. Singh,Ranbir, Lateral epitaxial GaN metal insulator semiconductor field effect transistor.
    6. Singh,Ranbir, Lateral power diodes.
    7. Singh,Ranbir, Lateral super junction field effect transistor.
    8. Slater, Jr., David B.; Suvorov, Alexander, Low temperature formation of backside ohmic contacts for vertical devices.
    9. Kraft,Nathan; Kocon,Christopher Boguslaw; Thorup,Paul, Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together.
    10. Shenai, Krishna; Trivedi, Malay; Neudeck, Philip, Method of forming a semiconductor device with a junction termination layer.
    11. Singh, Ranbir, Method, apparatus, material, and system of using a high gain avalanche photodetector transistor.
    12. Ryu,Sei Hyung; Agarwal,Anant K., Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination.
    13. Ryu, Sei-Hyung; Agarwal, Anant K., Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations.
    14. Ryu, Sei-Hyung; Agarwal, Anant K., Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations.
    15. Ryu,Sei Hyung; Agarwal,Anant K., Multiple floating guard ring edge termination for silicon carbide devices.
    16. Okamura, Yuji; Matsushita, Masashi, Semiconductor device and method of manufacturing the same.
    17. Okamura, Yuji; Matsushita, Masashi, Semiconductor device and method of manufacturing the same.
    18. Okamura, Yuji; Matsushita, Masashi, Semiconductor device and method of manufacturing the same.
    19. Soendker, Erich H.; Hertel, Thomas A.; Saldivar, Horacio, Semiconductor device having an inorganic coating layer applied over a junction termination extension.
    20. Sankin,Igor; Merrett,Joseph Neil, Semiconductor device with surge current protection and method of making the same.
    21. Veliadis, John Victor D.; McNutt, Ty R., Semiconductor structure with an electric field stop layer for improved edge termination capability.
    22. Kraft,Nathan; Kocon,Christopher Boguslaw; Thorup,Paul, Shielded gate trench FET with the shield and gate electrodes being connected together.
    23. Kraft, Nathan; Kocon, Christopher Boguslaw; Thorup, Paul, Shielded gate trench FET with the shield and gate electrodes connected together in non-active region.
    24. Rupp, Roland; Hecht, Christian; Konrath, Jens; Bergner, Wolfgang; Schulze, Hans-Joachim; Elpelt, Rudolf, Silicon carbide device and a method for forming a silicon carbide device.
    25. Rupp, Roland; Hecht, Christian; Konrath, Jens; Bergner, Wolfgang; Schulze, Hans-Joachim; Elpelt, Rudolf, Silicon carbide device and a method for forming a silicon carbide device.
    26. Schulze, Hans-Joachim; Hecht, Christian; Rupp, Roland; Elpelt, Rudolf, Silicon carbide device and a method for manufacturing a silicon carbide device.
    27. Schulze, Hans-Joachim; Hecht, Christian; Rupp, Roland; Elpelt, Rudolf, Silicon carbide device and a method for manufacturing a silicon carbide device.
    28. Ryu, Sei-Hyung; Agarwal, Anant K., Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection.
    29. Sankin, Igor; Merrett, Joseph Neil, Vertical junction field effect transistor with mesa termination and method of making the same.
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