초록 ▼

The present invention may provide a towel desirably including first and second layers having cellulosic fibers and a repellant agent. The first and second layers may substantially sandwich a third layer having cellulosic fibers with higher absorbency than the first and second layers. All three layer

The present invention may provide a towel desirably including first and second layers having cellulosic fibers and a repellant agent. The first and second layers may substantially sandwich a third layer having cellulosic fibers with higher absorbency than the first and second layers. All three layers may form a single ply.

대표청구항 ▼

The present invention may provide a towel desirably including first and second layers having cellulosic fibers and a repellant agent. The first and second layers may substantially sandwich a third layer having cellulosic fibers with higher absorbency than the first and second layers. All three layer

The present invention may provide a towel desirably including first and second layers having cellulosic fibers and a repellant agent. The first and second layers may substantially sandwich a third layer having cellulosic fibers with higher absorbency than the first and second layers. All three layers may form a single ply. semiconductor layer; forming a second insulating film containing hydrogen on said first insulating film; and performing a heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said second insulating film. 5. A method of fabricating a semiconductor device comprising the steps of: forming a semiconductor layer over a substrate; forming a gate insulating film over said semiconductor layer; forming a gate electrode over said gate insulating film; forming a first insulating film containing hydrogen over said gate electrode and said gate insulating film; forming a second insulating film on said first insulating film; performing a heat-treatment in a hydrogen atmosphere after forming said second insulating film thereby diffusing hydrogen contained in said first insulating film into said semiconductor layer; forming a third insulating film containing hydrogen on said second insulating film; and performing a heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said third insulating film. 6. A method of fabricating a semiconductor device comprising the steps of: forming a semiconductor layer over a substrate; forming a gate insulating film over said semiconductor layer; forming a gate electrode over said gate insulating film; forming a first insulating film over said gate electrode and said gate insulating film; performing a first heat-treatment in a hydrogen atmosphere after forming said first insulating film thereby diffusing hydrogen contained in said first insulating film into said semiconductor layer; forming a second insulating film on said first insulating film; performing a second heat-treatment in a hydrogen atmosphere after forming said second insulating film; forming a third insulating film containing hydrogen on said second insulating film; and performing a third heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said third insulating film. 7. A method of fabricating a semiconductor device according to claim 2, wherein said first insulating film comprises a silicon nitride oxide film. 8. A method of fabricating a semiconductor device according to claim 2, wherein said second insulating film comprises a silicon nitride oxide film. 9. A method of fabricating a semiconductor device according to claim 4, wherein said third insulating film comprises a silicon nitride oxide film or a silicon nitride film. 10. A method of fabricating a semiconductor device according to claim 7, wherein a carbon concentration in each of said first and second insulating films is not greater than 2×1019cm-3. 11. A method of fabricating a semiconductor device comprising the steps of: forming a semiconductor layer formed over a substrate; forming a gate insulating film formed over said semiconductor layer; forming a gate electrode over said gate insulating film; forming a silicon nitride oxide film from silane, nitrous oxide and ammonia over said gate electrode and said gate insulating film; and performing a heat-treatment in a hydrogen atmosphere after forming said silicon nitride oxide film thereby diffusing hydrogen contained in said silicon nitride oxide film into said semiconductor layer. 12. A method of fabricating a semiconductor device comprising the steps of: forming a semiconductor layer over a substrate; forming a gate insulating film over said semiconductor layer; forming a gate electrode over said gate insulating film; forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia said gate electrode and said gate insulating film; forming a second silicon nitride oxide film from silane and nitrous oxide on said first silicon nitride oxide film; and performing a heat-treatment in a hydrogen atmosphere after forming said second silicon nitride oxide film thereby diffusing hydrogen contained in said first silicon nitride oxide film into said semiconductor layer. 13. A method of fa