A structure is provided which suppresses a parasitic bipolar effect without decreasing the breakdown voltage at the junctions between the excessive carrier extracting region and source/drain regions of a MOS transistor for a voltage of approximately 15 volts in a semiconductor device formed on a sem
A structure is provided which suppresses a parasitic bipolar effect without decreasing the breakdown voltage at the junctions between the excessive carrier extracting region and source/drain regions of a MOS transistor for a voltage of approximately 15 volts in a semiconductor device formed on a semiconductor layer on an insulating layer. In the MOS transistor having a source tied body structure, a semiconductor regions having a low impurity concentration is formed between a regions for extracting excessive carriers and source/drain regions. Thus, the breakdown voltage at the junctions between the extracting regions and the source/drain regions is increased and a parasitic bipolar effect is suppressed without breakdown between the extracting regions and the source/drain regions.
대표청구항▼
A structure is provided which suppresses a parasitic bipolar effect without decreasing the breakdown voltage at the junctions between the excessive carrier extracting region and source/drain regions of a MOS transistor for a voltage of approximately 15 volts in a semiconductor device formed on a sem
A structure is provided which suppresses a parasitic bipolar effect without decreasing the breakdown voltage at the junctions between the excessive carrier extracting region and source/drain regions of a MOS transistor for a voltage of approximately 15 volts in a semiconductor device formed on a semiconductor layer on an insulating layer. In the MOS transistor having a source tied body structure, a semiconductor regions having a low impurity concentration is formed between a regions for extracting excessive carriers and source/drain regions. Thus, the breakdown voltage at the junctions between the extracting regions and the source/drain regions is increased and a parasitic bipolar effect is suppressed without breakdown between the extracting regions and the source/drain regions. O92/007830, WO; WO92/020642, WO; WO92/021660, WO; WO93/001182, WO; WO93/023040, WO; WO94/003427, WO; WO94/010202, WO; WO94/014808, WO; WO95/001349, WO; WO95/014667, WO; WO95/017181, WO; WO95/022976, WO; WO95/024190, WO; WO96/000226, WO; WO96/016964, WO; WO96/032380, WO; WO96/040116, WO; WO97/025986, WO; WO97/034920, WO; WO97/036867, WO; WO98/007695, WO; WO98/007835, WO; WO98/024432, WO; WO98/038984, WO; WO98/045708, WO; WO98/050356, WO; WO98/056376, WO; WO99/010325, WO; WO99/019325, WO; WO99/048868, WO; WO99/052869, WO; WO99/061422, WO; WO99/065869, WO; 00/08202, WO; 00/35908, WO; 00/38519, WO; 00/56709, WO; 01/37820, WO; WO 01/60814, WO
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