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A heuristic logical neighborhooding technique is applied to dynamic wireless networking. Logical neighborhooding, provides for the formation of logical neighborhoods across a plurality of channels when such need arises due to increased network density. The technique utilizes a time division multiple

A heuristic logical neighborhooding technique is applied to dynamic wireless networking. Logical neighborhooding, provides for the formation of logical neighborhoods across a plurality of channels when such need arises due to increased network density. The technique utilizes a time division multiple access structure including bootstrap slots, broadcast slots, and traffic slots.

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A heuristic logical neighborhooding technique is applied to dynamic wireless networking. Logical neighborhooding, provides for the formation of logical neighborhoods across a plurality of channels when such need arises due to increased network density. The technique utilizes a time division multiple

A heuristic logical neighborhooding technique is applied to dynamic wireless networking. Logical neighborhooding, provides for the formation of logical neighborhoods across a plurality of channels when such need arises due to increased network density. The technique utilizes a time division multiple access structure including bootstrap slots, broadcast slots, and traffic slots. mory architecture for a memory for a semiconductor die, said redundant memory architecture having a first sub-array of memory and a second sub-array of memory, the redundant memory architecture having circuitry for storing row addresses of defective rows in the first sub-array of memory and second sub-array of memory and for activating a redundant row in one sub-array of the first sub-array of memory and second sub-array of memory in response to receiving a row address matching one of the stored row addresses of defective rows while disabling a redundant row arranged in the other sub-array of the first sub-array of memory and second sub-array of memory in an order complementary to that of the activated redundant row, the redundant memory architecture comprising: a plurality of fuse banks storing the row addresses of defective rows and outputting a match signal in response to receiving the row address matching the one of the stored row addresses of defective rows; at least one first row decoder and at least one second row decoder connected to the respective first sub-array of memory and second sub-array of memory activating the redundant rows in the first sub-array of memory and second sub-array of memory in response to receiving the match signal; and a plurality of enable fuses connected between the plurality of fuse banks and the at least one first row decoder and the at least one second row decoder conducting the match signal to the at least one row decoder coupled to the one sub-array of the first sub-array of memory and second sub-array of memory and isolating the match signal from the at least one row decoder coupled to the other sub-array of the first sub-array of memory and second sub-array of memory disabling activation of the redundant row in the other sub-array of the first sub-array of memory and second sub-array of memory. 7. The redundant memory architecture of claim 6, wherein the plurality of enable fuses is coupled to the at least one first row decoder in an order complementary to an order in which the plurality of enable fuses is coupled to the at least one second row decoder so the disabled redundant row in the other sub-array of the first sub-array of memory and second sub-array of memory is arranged in an order complementary to that of the activated redundant row in the one sub-array of the first sub-array of memory and second sub-array of memory. 8. The redundant memory architecture of claim 6, wherein the at least one first row decoder and the at least one second row decoder are constructed so redundant rows are activated in the first sub-array of memory in an order complementary to an order in which redundant rows are activated in the second sub-array of memory. 9. A method of memory storage for providing redundant memory for a semiconductor die having a plurality of memory cells, arranged rows of memory cells forming sub-arrays of memory cells, the sub-arrays of memory cells forming at least one array of memory cells in the redundant memory, comprising: identifying row addresses of defective memory cells in rows of memory cells of the redundant memory; storing row addresses of defective rows in a pair of sub-arrays in the redundant memory; activating a redundant row in one sub-array of the pair of sub-arrays in response to receiving a row address matching one of the stored row addresses of defective rows; and disabling activation of a redundant row arranged in the other sub-array of the pair of sub-arrays in an order complementary to that of the activated redundant row when a match signal is isolated from a row decoder associated with the other sub-array of the pair of sub-arrays. 10. The method of claim 9, wherein the storing row addresses of defective rows comprises storing the row addresses of defective rows using fuse banks. 11. The method of claim 9, wherein the activating a redundant row in the one sub-array of the pair of sub-arrays comprises: outputting a match signal in respon