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Methods and apparatus for delivery of high purity reactive liquids using gaseous assist are described, the apparatus comprising a container body, the container body having fluidly connected thereto a gas inlet and a reactive liquid outlet, the gas inlet fitted with a means adapted to hold a gas filt

Methods and apparatus for delivery of high purity reactive liquids using gaseous assist are described, the apparatus comprising a container body, the container body having fluidly connected thereto a gas inlet and a reactive liquid outlet, the gas inlet fitted with a means adapted to hold a gas filter media, and a gas filter media positioned within said means adapted to hold a gas filter media, the gas inlet having a gas inlet valve, the liquid outlet having a liquid outlet valve.

대표청구항 ▼

Methods and apparatus for delivery of high purity reactive liquids using gaseous assist are described, the apparatus comprising a container body, the container body having fluidly connected thereto a gas inlet and a reactive liquid outlet, the gas inlet fitted with a means adapted to hold a gas filt

Methods and apparatus for delivery of high purity reactive liquids using gaseous assist are described, the apparatus comprising a container body, the container body having fluidly connected thereto a gas inlet and a reactive liquid outlet, the gas inlet fitted with a means adapted to hold a gas filter media, and a gas filter media positioned within said means adapted to hold a gas filter media, the gas inlet having a gas inlet valve, the liquid outlet having a liquid outlet valve. right 2000 by Honeywell, printed Aug. 24, 2000. Internet web page http://www.hitecmetalgroup.com/engprod.htm , by HI TecMetal Group, Inc., printed Aug. 24, 2000. Advertisement, "HI TecMetal Group Develops Niche Market for Brazed Laminated Assemblies", Fluid Power Journal, Sep./Oct. 1999 issue, p. 27. Noworolski et al., "Process for in-plane and out-of-plane single-crystal-silicon thermal microactuators," Sensors and Actuators A, Elsevier Science S.A., vol. 55, No. 1, (1996) 65-69. Ayon et al., "Etching Characteristics and Profile Control in a Time Multiplexed ICP Etcher," Proc. of Solid State Sensor and Actuator Workshop Technical Digest, Hilton Head SC, (Jun. 1998) 41-44. Bartha et al., "Low Temperature Etching of Si in High Density Plasma Using SF6/O2," Microelectronic Engineering, Elsevier Science B.V., vol. 27, (1995) 453-456. Fung et al., "Deep Etching of Silicon Using Plasma" Proc. of the Workshop on Micromachining and Micropackaging of Transducers, (Nov. 7-8, 1984) 159-164. Klaassen et al., "Silicon Fusion Bonding and Deep Reactive Ion Etching; A New Technology for Microstructures," Proc., Transducers 95 Stockholm Sweden, (1995) 556-559. Linder et al.,"Deep Dry Etching Techniques as a New IC Compatible Tool for Silicon Micromachining," Proc,. Transducers, vol. 91, (Jun. 1991) 524-527. Petersen et al., "Surfaced Micromachined Structures Fabricated with Silicon Fusion Bonding," Proc. Transducers, vol. 91, (Jun. 92) 397-399. Yunkin et la., "Highly Anisotropic Selective Reactive Ion Etching of Deep Trenches in Silicon," Microelectronic Enginineering, Elsevier Science B.V., vol. 23, (1994) 373-376.