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A method for forming a metal pattern by the micro-stamping process involves the steps of treating a substrate bearing a thin film of a reducing silicon polymer with a solution containing a salt of a metal having a standard oxidation-reduction potential of at least 0.54 volt, allowing metal colloid t

A method for forming a metal pattern by the micro-stamping process involves the steps of treating a substrate bearing a thin film of a reducing silicon polymer with a solution containing a salt of a metal having a standard oxidation-reduction potential of at least 0.54 volt, allowing metal colloid to deposit on the substrate surface, stamping a pattern of an alkane thiol to the substrate surface for transferring the pattern to the metal colloid-bearing silicon polymer thin film, and effecting electroless metal plating for forming a metal pattern only on the region of the silicon polymer thin film which is not covered with the alkane thiol pattern. The finely defined metal pattern can be formed on any type of substrate though inexpensive simple steps and has good adhesion to the substrate.

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1. In a method for forming a metal pattern by a micro-stamping process of fabricating a micro-structure by using a stamp for transferring a pattern, comprising the steps of: treating a substrate bearing a thin film of a reducing silicon polymer on a surface thereof, said thin film having a thickness

1. In a method for forming a metal pattern by a micro-stamping process of fabricating a micro-structure by using a stamp for transferring a pattern, comprising the steps of: treating a substrate bearing a thin film of a reducing silicon polymer on a surface thereof, said thin film having a thickness in the range 0.001 to 10 μm, with a salt of a metal having a standard oxidation-reduction potential of at least 0.54 volt, stamping a pattern of an alkanethiol to the substrate surface for transferring the pattern to the metal colloid-bearing silicon polymer thin film, and effecting electroless metal plating for forming a metal pattern only on the region of the silicon polymer thin film which is not covered with the alkanethiol pattern, the improvement which comprises treating the substrate bearing the thin film of reducing silicon polymer on its surface with an aqueous solution containing said metal salt, thereby allowing metal colloid to deposit on the silicon polymer thin film, wherein the silicon polymer film on the substrate is not subjected to ultraviolet light lithography prior to treatment with the metal salt solution. 2. A method for forming a metal pattern, comprising the steps of: (1) applying a reducing silicon polymer to a substrate to form a silicon polymer thin film having a thickness in the range 0.001 to 10 μm on a surface thereof, (2) without subjecting the silicon polymer film on the substrate to ultraviolet light lithography, treating the substrate resulting from step (1) with a solution comprising a salt of a metal having a standard oxidation-reduction potential of at least 0.54 volt and water, and, without isolating metal colloid from the solution, allowing metal colloid to deposit on the silicon polymer thin film, (3) pressing a stamp having a corrugated pattern with an alkanethiol applied thereon against the substrate resulting from step (2) for transferring the pattern of alkanethiol onto the metal colloid-bearing silicon polymer thin film, and (4) effecting electroless metal plating on the substrate resulting from step (3) for forming a metal pattern only on the region of the silicon polymer thin film which is not covered with the alkanethiol pattern. 3. The method of claim 1, wherein the reducing silicon polymer has Si--Si bonds or Si--H bonds and is selected from the group consisting of polysilanes, polycarbosilanes, polysiloxanes, and polysilazanes. 4. The method of claim 3, wherein the polysilane having Si--Si bonds is represented by the following formula (1): (R1mR2nXpSi)q (1) wherein R1and R2each are hydrogen or a substituted or unsubstituted aliphatic, alicyclic, or aromatic hydrocarbon group, X is selected from the group consisting of R1,an alkoxy group, halogen atom, oxygen atom, and nitrogen atom, m is a number of 0.1 to 1, n is a number of 0.1 to 1, p is a number of 0 to 0.5, the sum of m+n+p is from 1 to 2.5, and q is an integer of 2 to 100,000. 5. The method of claim 3, wherein the polysiloxane having Si--H bonds is represented by the following formula (2): (R1rR2tHuSiOa)s (2) wherein R1and R2each are hydrogen, a substituted or unsubstituted aliphatic, alicyclic, or aromatic hydrocarbon group, alkoxy group, or halogen atom, r is a number of 0.1 to 1, t is a number of 0.1 to 1, u is a number of 0.01 to 1, the sum of r+t+u is from 1 to 2.5, "a" is a number of 0.01 to 1.5, and s is an integer of 2 to 100,000. 6. The method of claim 3, wherein the metal having a standard oxidation-reduction potential of at least 0.54 volt is palladium, silver, or gold. 7. The method of claim 1, wherein the alkane thiol is represented by the following formula (3): RSH (3) wherein R is a substituted or unsubstituted aliphatic, alicyclic, or aromatic hydrocarbon group.