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A bracket and method for connecting two component members, where the bracket is concealed from the outside of a joint formed by the two component members. The bracket includes a first flange having a hole for receiving a securing member and at least one second flange, including at least one protrusi

A bracket and method for connecting two component members, where the bracket is concealed from the outside of a joint formed by the two component members. The bracket includes a first flange having a hole for receiving a securing member and at least one second flange, including at least one protrusion for engaging a cavity in a first member to be secured. This design may use a single screw or bolt, and therefore saves assembly time and reduces product cost.

대표청구항 ▼

A bracket and method for connecting two component members, where the bracket is concealed from the outside of a joint formed by the two component members. The bracket includes a first flange having a hole for receiving a securing member and at least one second flange, including at least one protrusi

A bracket and method for connecting two component members, where the bracket is concealed from the outside of a joint formed by the two component members. The bracket includes a first flange having a hole for receiving a securing member and at least one second flange, including at least one protrusion for engaging a cavity in a first member to be secured. This design may use a single screw or bolt, and therefore saves assembly time and reduces product cost. Acousto-Optic Applications," 1997 Applied Physics Letters, vol. 70(16), Apr. 21, 1997, pp. 2097-2099. A. Mansingh et al., "Surface Acoustic Wave Propagation in PZT/YBCO/SrTiO3and PbTiO3/YBCO/SrTiO3Epitaxial Heterostructures," Ferroelectric, vol. 224, pp. 275-282, 1999. S. Mathews et al., "Ferroelectric Field Effect Transisitor Based on Epitaxial Perovskite Heterostructures", Science, vol. 276, Apr. 11, 1997, pp. 238-240. R. Houdre et al., "Properties of GaAs on Si Grown by Molecular Beam Epitaxy," Solid State and Materials Sciences, vol. 16, Issue 2, 1990, pp. 91-114. S. F. Fang et al., "Gallium Arsenide and Other Compound Semiconductors on Silicon," J. Appl. Phys., 68(7), Oct. 1, 1990, pp. R31-R58. Carlin et al., Impact of GaAs Buffer Thickness on Electronic Quality of GaAs Grown on Graded Ge/GeSi/Si Subtrates, Appl. Phys. Letter, vol. 76, No. 14, Apr. 2000, pp. 1884-1886. Ringel et al., "Epitaxial Integration of III-V Materials and Devices with Si Using Graded GeSi Buffers," 27thInternational Symposium on Compound Semiconductors, Oct. 2000. Zogg et al., "Progress in Compound-Semiconductor-on-Silicon-Heteroepitaxy with Flouride Buffer Layers," J. Electrochem Soc., vol. 136, No. 3, Mar. 1998, pp. 775-779. Xiong et al., "Oxide Defined GaAs Vertical-Cavity Surface-Emitting Lasers on Si Substrates," IEEE Photonics Technology Letters, vol. 12, No. 2, Feb. 2000, pp. 110-112. Gunapala et al., "Bound-to-Quasi-Bound Quantum-Well Infrared Photodetectors," NASA Tech Brief, vol. 22, No. 9, Sep. 1998. Abhay, M. Joshi et al., "Monolithic inGaAs-on-silicon Wave Infrared Detector Arrays," Intn. Society for Optical Engineering, vol. 2999, pp. 211-224. Bruley et al., "Nanostructure and Chemistry of a (100)MgO/(100) GaAs Interface," Appl. Phys Lett, 65(5), Aug. 1994, pp. 564-566. Fork et al., "Epitaxial MgO On Si(001) for Y-Ba-Cu-O Thin Film Growth by Pulsed Laser Deposition," Appl. Phys Lett, 58(20), May 20, 1991, pp. 2294-2296. Himpsel et al., "Dialectrics on Semiconductors," Materials Science and Engineering, B1(1988), pp. 9-13. Mikami et al., "Formation of Si Epi/MgO-Al2O3Epi./SiO3/Si and Its Epitaxial Film Quality," Fundamental Research Laboratories and Microelectronics Laboratories, pp. 31-34, 1983. R.A. Morgan et al., "Vertical-Cavity Surface-Emitting Lasers Come of Age," SPIE, vol. 2683, pp. 18-29. (No Date). "Technical Analysis of Qualcomm QCP-800 Portable Cellular Phone (Transmitter Circuitry)," Talus Corporation, Qualcomm QCP-800 Technical Analysis Report, Dec. 10, 1996, pp. 5-8. T. Mizuno, et al.; "Electron and Hole Mobility Enhancement in Strained-Si MOSFET's on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology"; IEEE Electron Device Letters, vol. 21, No. 5, May 2000; pp. 230-232. F.M. Buffer, et al.; "Strain-dependence of electron transport in bulk Si and deep-submicron MOSFET's"' Computatural Electronics, 2000, Book of Abstracts, IWCE Glasgow 2000, 7thInt'l Workshop on, 2000; pp. 64-65. Mau-Chung Frank Chang, et al.; "RF/Wireless Interconnect for Inter-and Intra-Chip Communications"; Proceedings of the IEEE, vol. 89, No. 4, Apr. 2001; pp. 456-466. The Electronics Industry Report: Prismark; 2001; pp. 111-120. Nagata et al., "Heteroepitaxial Growth of CeO2(001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum," Jpn. Jour. Appl. Phys., vol. 30, No. 6B, Jun. 1991, pp. L1136-L1138. J.K. Abrokwah, et al.; "A Manufacturable High-Speed Low-Power Complementary GaAs Process"; Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, 1994, pp. 592-594. C.J. Palmstrom et al.; "Stable and Epitaxial Contacts to III-V Compound Semiconductors"; Contacts to Semiconductors Fundamentals and Technology; Noyles Publications, 1993; pp. 67-150. Jayshri Sabarinathat, et al; "Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal us