Packaging containers produced from a composite shaped by cold-forming, the term "packaging containers" including base or lid parts or base or lid parts shaped by cold-forming. The base or lid parts can be shaped by cold-forming, and a lid foil or base foil, respectively, can form the corresponding c
Packaging containers produced from a composite shaped by cold-forming, the term "packaging containers" including base or lid parts or base or lid parts shaped by cold-forming. The base or lid parts can be shaped by cold-forming, and a lid foil or base foil, respectively, can form the corresponding closure for the packaging container. In addition, both the base and the lid part can be shaped by cold-forming, the depressions formed in the base and lid parts advantageously lying opposite one another. Examples of these packaging containers are strip packing or blister packaging for pharmaceutical products. The composite from which the packaging container or parts thereof are produced has a layered structure, for example, comprising: (a) a plastics foil between 10 μm and 250 μm thick; (b) a bi- or monoaxially oriented foil selected from the group comprising polyvinylchloride foils, polyolefin foils, polyamide foils or polyester foils between 10 and 100 μm thick, or a bi- or monoaxially oriented plastics foil composite comprising two foils selected from the group comprising polyvinylchloride foils, polyolefin foils, polyamide foils or polyester foils each between 10 and 50 μm thick; (c) a metal foil between 20 and 200 μm thick; and (a1) a plastics foil between 10 and 250 μm thick. The packaging containers are characterized by a high degree of flatness and/or rigidity.
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Packaging containers produced from a composite shaped by cold-forming, the term "packaging containers" including base or lid parts or base or lid parts shaped by cold-forming. The base or lid parts can be shaped by cold-forming, and a lid foil or base foil, respectively, can form the corresponding c
Packaging containers produced from a composite shaped by cold-forming, the term "packaging containers" including base or lid parts or base or lid parts shaped by cold-forming. The base or lid parts can be shaped by cold-forming, and a lid foil or base foil, respectively, can form the corresponding closure for the packaging container. In addition, both the base and the lid part can be shaped by cold-forming, the depressions formed in the base and lid parts advantageously lying opposite one another. Examples of these packaging containers are strip packing or blister packaging for pharmaceutical products. The composite from which the packaging container or parts thereof are produced has a layered structure, for example, comprising: (a) a plastics foil between 10 μm and 250 μm thick; (b) a bi- or monoaxially oriented foil selected from the group comprising polyvinylchloride foils, polyolefin foils, polyamide foils or polyester foils between 10 and 100 μm thick, or a bi- or monoaxially oriented plastics foil composite comprising two foils selected from the group comprising polyvinylchloride foils, polyolefin foils, polyamide foils or polyester foils each between 10 and 50 μm thick; (c) a metal foil between 20 and 200 μm thick; and (a1) a plastics foil between 10 and 250 μm thick. The packaging containers are characterized by a high degree of flatness and/or rigidity. e method of claim 1 wherein at least five sets are processed without cleaning the reaction chamber internal sidewalls while maintaining a particle count per wafer at less than about 100. 5. The method of claim 1 wherein at least ten sets are processed without cleaning the reaction chamber internal sidewalls while maintaining a particle count per wafer at less than about 220. 6. The method of claim 1 wherein the deposited material comprises one or more of silicon dioxide, silicon nitride and silicon oxynitride. 7. The method of claim 1 wherein the deposited material comprises carbon. 8. The method of claim 1 wherein the deposited material comprises Ge. 9. The method of claim 1 wherein the deposited material comprises metal. 10. A method of utilizing a plasma in a reaction chamber, comprising: providing a substrate within the reaction chamber and maintaining a plasma within the chamber which is primarily inductively coupled; and while the substrate remains in the reaction chamber and without stopping the plasma, changing the plasma to be primarily capacitively coupled. 11. A method of utilizing a plasma in a reaction chamber, comprising: providing a substrate within the reaction chamber and forming a deposit on the substrate while the plasma is primarily inductively coupled; a material forming along an internal surface of the reaction chamber as the deposit is formed; while the substrate remains in the reaction chamber, changing the plasma to be primarily capacitively coupled and substantially ceasing the depositing of the material; and utilizing the primarily capacitively coupled plasma to improve adhesion of the material along the internal surface of the reaction chamber. 12. The method of claim 11 wherein the deposit comprises one or more of silicon dioxide, silicon nitride and silicon oxynitride. 13. The method of claim 11 wherein the deposit consists essentially of one or more of silicon dioxide, silicon nitride and silicon oxynitride. 14. The method of claim 11 wherein only one discrete substrate is within the reaction chamber during the forming of the deposit and the improving of the adhesion of the material. 15. A deposition and chamber treatment method comprising: providing a substrate within a reaction chamber, the reaction chamber having internal sidewalls around the substrate; flowing one or more precursors within the chamber and forming a deposit over the substrate from the one or more precursors; forming a material along the sidewalls during the forming of the deposit over the substrate; while the substrate remains in the chamber: ceasing the flow of at least one of the one or more precursors; providing an activated species within the chamber; and impacting the material along the sidewalls with the activated species to treat the material and thereby decrease flaking of the material from the sidewall. 16. The method of claim 15 wherein: the deposit comprises silicon and nitrogen; the precursors include a silicon-containing precursor and nitrogen-containing precursor; and the ceasing the flow of the at least one precursor comprises ceasing the flow of the silicon-containing precursor and does not comprise ceasing the flow of the nitrogen-containing precursor. 17. The method of claim 15 wherein: the deposit comprises silicon and oxygen; the precursors include a silicon-containing precursor and oxygen-containing precursor; and the ceasing the flow of the at least one precursor comprises ceasing the flow of the silicon-containing precursor and does not comprise ceasing the flow of the oxygen-containing precursor. 18. The method of claim 15 wherein the precursors include silane and one or more of NH3,N2O and O2; and wherein the ceasing the flow of at least one precursor comprises ceasing the flow of the silane. 19. The method of claim 15 wherein the precursors include silane and one or more of N2,NH3,N2O and O2; and wherein the ceasing the flow of at least one precursor comprises ceasing the flow of the silane and not ceasing the flow of the one or more of N2,NH3,N2O and O2. 20. The method of claim 15 wherein the providing the activated species comprises flowing one or more of Ar, Ne, He, Kr and Xe into the chamber and generating the activated species from the one or more of the Ar, Ne, He, Kr and Xe. 21. A deposition and chamber treatment method comprising: providing a substrate within a reaction chamber, the reaction chamber having an interior surface; forming a plasma within the reaction chamber, the plasma being primarily inductively coupled; while the plasma is primarily inductively coupled, flowing one or more precursors within the chamber and forming a deposit over the substrate from the one or more precursors; a material forming along the interior surface of the reaction chamber during the forming of the deposit; and after forming the deposit and while the substrate remains in the chamber; changing the plasma to a plasma that is primarily capacitively coupled; the primarily capacitively coupled plasma being utilized to modify the material along the interior surface of the chamber and thus to treat an interior region of the chamber. 22. The method of claim 21 wherein the primarily inductively coupled plasma has a density of at least about 1011free electrons per cubic centimeter. 23. The method of claim 21 wherein the plasma is powered by radiofrequency energy from one or more coils proximate the reaction chamber, and wherein the changing the plasma from being primarily inductively coupled to being primarily capacitively coupled comprises reducing a power supplied to the coils. 24. The method of claim 23 wherein the power supplied to the one or more coils while the plasma is primarily inductively coupled is at least about 3000 watts, and wherein the power supplied to the one or more coils while the plasma is primarily capacitively coupled is less than about 1000 watts. 25. The method of claim 21 wherein the substrate is biased relative to the plasma while the plasma is primarily capacitively coupled. 26. The method of claim 25 wherein the bias of the substrate relative to the plasma is less than or equal to about 2000 watts. 27. The method of claim 21 wherein the deposit comprises silicon and nitrogen. 28. The method of claim 21 wherein the deposit comprises silicon and oxygen. 29. The method of claim 21 wherein the precursors include silane and one or more of NH3,N2O and O2. 30. A silicon dioxide deposition method comprising: providing a substrate within a reaction chamber, the reaction chamber having an internal surface; forming a high density plasma that is primarily inductively coupled within the chamber; while the high density plasma is within the chamber, flowing silane and O2into the chamber and depositing silicon dioxide onto the substrate from the silane and O2; a material forming on the internal surface of the chamber during the depositing of the silicon dioxide; and after depositing the silicon dioxide and while the substrate remains within the chamber; changing the plasma to a plasma that is primarily capacitively coupled; the primarily capacitively coupled plasma being utilized to alter the material on the internal surface of the chamber. 31. The method of claim 30 wherein the primarily inductively coupled plasma has a density of at least about 1011free electrons per cubic centimeter. 32. The method of claim 30 wherein the flow of the silane is ceased prior to changing the plasma to a primarily capacitively coupled plasma and remains ceased during the alteration of the material on the internal surface of the chamber. 33. The method of claim 30 wherein: substrate has trenches extending therein; the silicon dioxide is deposited within the trenches; and the silicon dioxide
Stillman Nathan (Walnut Creek CA), Flexible packaging composite comprising an outer polyamide layer, an intermediate metal foil layer and an interior heat-.
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