[특허]State-variable control system

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	B01L-003/02
출원번호	US-0575395 (2000-05-22)
발명자 / 주소	LaBudde, Edward V. Queeney, Jr., Paul J.
출원인 / 주소	Cartesian Technologies, Inc.
대리인 / 주소	Knobbe, Martens, Olson & Bear, LLP
인용정보	피인용 횟수 : 49 인용 특허 : 48

초록 ▼

The invention relates to a state-variable feedback control system for monitoring and optimally controlling the operation of a microfluidic aspirate dispense-system. A steady state operating pressure is determined from the fluid, flow and/or operational characteristics of the system. Measurements fro

The invention relates to a state-variable feedback control system for monitoring and optimally controlling the operation of a microfluidic aspirate dispense-system. A steady state operating pressure is determined from the fluid, flow and/or operational characteristics of the system. Measurements from one or more pressure sensors are part of the control strategy to derive information for active feedback control and/or to achieve the desired operating pressure. Advantageously, the control system adds to the versatility of the aspirate-dispense system, for example, by permitting rapid dispensing of drops of different size. The control system also desirably facilitates efficient, repeatable and accurate performance and reduces wastage of valuable reagents or fluid.

대표청구항 ▼

The invention relates to a state-variable feedback control system for monitoring and optimally controlling the operation of a microfluidic aspirate dispense-system. A steady state operating pressure is determined from the fluid, flow and/or operational characteristics of the system. Measurements fro

The invention relates to a state-variable feedback control system for monitoring and optimally controlling the operation of a microfluidic aspirate dispense-system. A steady state operating pressure is determined from the fluid, flow and/or operational characteristics of the system. Measurements from one or more pressure sensors are part of the control strategy to derive information for active feedback control and/or to achieve the desired operating pressure. Advantageously, the control system adds to the versatility of the aspirate-dispense system, for example, by permitting rapid dispensing of drops of different size. The control system also desirably facilitates efficient, repeatable and accurate performance and reduces wastage of valuable reagents or fluid. fferent from that of said first film, forming a first hole exposing the surface of said first film and having a sidewall of said second film by selectively etching said second film, forming on said second film including the sidewall of said first hole a third film of a material having an under-etching characteristic equal to that of said second film, forming a sidewall layer on the sidewall of said first hole by etching anisotropically said third film, forming a second hole exposing the surface of said insulating film-and having a diameter smaller than that of said first hole by etching anisotropically said first film with said second film and said sidewall layer as a mask, and forming a third hole in said insulating film communicating with said second hole and reaching to the main surface of said semiconductor substrate by etching anisotropically said insulating film using said first film as a mask. 17. The method of manufacturing a semiconductor device according to clam 16, following said step of forming said third hole, further comprising the steps of: forming a resist on said first film to fill said third hole with said resist, etching said resist to expose said first film leaving said resist filled in said third hole, removing said first film by etching using said resist filled in said third hole as a mask, and removing said resist. 18. The method of manufacturing a semiconductor device according to claim 16, following said step of forming said third hole, further comprising the steps of: forming a conductive film on said first film to fill said third hole with said conductive film, etching said conductive film and said first film to expose said insulating film leaving said conductive film filled in said third hole, and forming an interconnection film on said insulating film and in connection with said conductive film filled in said third hole. 19. The method of manufacturing a semiconductor device according to claim 16, wherein said first film comprises a conductive member, and, after the step of forming said third hole, further comprising the step

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