IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
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| 국제특허분류(IPC7판) |
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| 출원번호 |
US-0624296
(2000-07-24)
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발명자
/ 주소 |
- El-Zein, Nada
- Ramdani, Jamal
- Eisenbeiser, Kurt
- Droopad, Ravindranath
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| 출원인 / 주소 |
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| 대리인 / 주소 |
Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
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| 인용정보 |
피인용 횟수 :
7 인용 특허 :
155 |
초록
▼
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous inte
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. These semiconductor materials have applications involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems, and automotive navigation systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges for automobiles.
대표청구항
▼
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous inte
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. These semiconductor materials have applications involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems, and automotive navigation systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges for automobiles. wiper. 9. The apparatus of claim 1, wherein said wiper includes a blade member sized and shaped to contact said inner surface of said tubular body in said irradiated section thereof. 10. The apparatus of claim 9, wherein said blade member includes at least one hole formed therein. 11. The apparatus of claim 10, wherein said at least one hole is a plurality of holes. 12. The apparatus of claim 1, wherein said first and second light baffles are each a pair of axially aligned cylindrical plates, each of said pair of plates including at least one hole for allowing fluid to pass through said pair of plates, said holes having offset axes such that light is prevented from passing through said first and second light baffles. 13. The apparatus of claim 12, wherein said at least one hole of each said first and second light baffles impart turbulence to flow of the fluid through said first and second light baffles. 14. The apparatus of claim 10, wherein said at least one hole imparts turbulence to flow of the fluid through said tubular body and permits increased UV light penetration into said irradiated section. 15. The apparatus as recited in claim 12, wherein said first and second light baffles are formed of a pair of cylindrical plates having unequal diameters. 16. The apparatus of claim 1, wherein said wiper is formed of a UV impervious material. 17. The apparatus of claim 1, wherein said apparatus is positioned in a chamber including at least one light reflector. 18. The apparatus of claim 1, wherein said wiper includes at least one perpendicular slit to reduce stress buckling of said wiper. 19. The apparatus of claim 8, wherein each said central axial bore includes a bearing for the support of said wiper shaft. 20. The apparatus of claim 19, wherein said bearing is constructed of a fluoropolymer material. 21. The apparatus of claim 8, wherein said first end cap and said second end cap each include a bearing for the support of said wiper shaft. 22. The apparatus of claim 3, wherein a first outer seal is positioned between said first end cap and said first light baffle and a second outer seal is positioned said second end cap and said second light baffle. 23. The apparatus of claim 2, wherein a first inner seal is positioned between said first light baffle and a first outer end surface and a second inner seal is positioned between said second light baffle and a second outer end surface. 24. An apparatus for irradiation of a fluid with UV light comprising: a back cover for mounting on a surface; a tubular body mounted to said back cover, said tubular body including an inlet and an outlet for ingress and egress of the fluid through said tubular body, one of said inlet and said outlet including a valve; an inner cover attached to the back cover; one or more radiation source attached to said inner cover, said one or more radiation source for producing UV light so arranged relative to said tubular body as to subject the fluid to the UV light; a first light baffle positioned inside said tubular body adjacent said inlet and a second light baffle positioned inside said tubular body adjacent said outlet, said first and second light baffles defining an irradiated section of said tubular body therebetween, said first and second light baffles formed of UV impervious material, each of said first and second light baffles including at least one passageway formed therethrough, said first and second light baffles preventing UV light penetration beyond said irradiated section of said tubular body while permitting the fluid to flow through said apparatus; an electronics module electrically connected to said valve and said one or more radiation source for controlling operation thereof; and a front cover attached to one of said inner cover and said back cover. plish exposure. Portions of a die pattern on a "pattern original" (e.g., reticle) are sequentially illuminated by an energy beam (e.g., beam of electromagnetic radiation or charged particles). The energy beam passes through the pattern portions and forms a demagnified image on a substrate through a projection-optical system. While moving the pattern original and the substrate, the entire die pattern is sequentially illuminated according to an exposure order, and the die pattern is demagnifyingly transferred to the substrate on which the images of the illuminated pattern portions are stitched together. When transferring and exposing the die pattern to multiple locations on the substrate, the exposure order is reversed after exposing each die pattern. ng the output current of the amplifier includes limiting the current available in an output of the amplifier for limiting a maximum sink and/or source current thereof. 8. Use of the method according to claim 1 in a simultaneity detection positron emission computer tomography (PET) system that performs imaging by simultaneously detecting a pair of photons emitted at an angle of 180° upon mutual annihilation of a positron and an electron. 9. The method according to claim 1, further including: (f) setting active the logic signal indicative of another pixel currently being active so as to determine the energy and incident time of a single active pixel in the sensor. 10. The method to claim 1, further including: (g) providing an initiation signal when the active pixel is detected, and (h) measuring the respective analog value of the active pixel at a predetermined time interval tDafter said initiation. 11. The method according to claim 10, including the steps of: (i) for each pixel providing a fast shaper having a fast time constant for shaping a charge signal associated with the pixel so as to generate a fast response curve which quickly rises above a predetermined threshold, (j) simultaneously shaping the charge signal via a slow shaper having a slow time constant so as to generate a slow response curve having high signal to noise ratio, (k) determining a time delay Δt for the fast response curve to exceed said predetermined threshold, and (l) sampling the slow response curve at a further time interval tp-Δt where tpis the time at which the slow response curve reaches its peak value so as to sample the slow response curve substantially at its peak value. 12. The method according to claim 11, further including: (m) limiting a slew rate of the fast shaper so that an output thereof reaches a predetermined threshold at an initiation time Tothat remains constant irrespective both of an amplitude of the data signal and of charge collection time. 13. The method according to claim 1, wherein step (b) includes: i) providing a lookup table having a plurality of addressable locations each corresponding to a respective pixel in the sensor and storing the known address of the respective pixel, ii) using each set latch in turn to point to a corresponding addressable location in said lookup table so as to read the known address of the corresponding active pixel, and iii) using each set latch in turn to address a corresponding channel of an analog multiplexer carrying the corresponding sampled and held value of the respective active pixel. 14. A simultaneity detector for detecting simultaneously active pixels in a sensor having at least two addressable segments each containing a plurality of addressable pixels, the simultaneity detector comprising: a respective sample and hold unit coupled to each pixel in each of the segments, each for sampling and holding a corresponding analog value associated with the pixel, a respective resettable latch coupled to each of the sample and hold units for changing from an initial unset logic state to a set logic state when the corresponding pixel goes active thereby establishing a time window within which any other pixel that subsequently goes active is considered to be a simultaneously active pixel, a logic circuit coupled to all segments in the detector for detecting two simultaneous segments in each of which there exists at least one active pixel, a lookup table in each segment having a plurality of addressable locations each corresponding to a respective pixel in the respective segment and storing the known address of the respective pixel, an analog multiplexer in each segment having a plurality of addressable channels each coupled to a respective sample and hold unit in said segment for carrying the corresponding sampled and held value of the respective pixel, a sparse readout circuit in each segment coupled to each of th
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