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Electrochemically assisted chemical polish 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B23H-003/00
출원번호 US-0905315 (2001-07-13)
발명자 / 주소
  • Sun, Lizhong
  • Li, Shijian
출원인 / 주소
  • Applied Materials Inc.
대리인 / 주소
    Moser, Patterson & Sheridan
인용정보 피인용 횟수 : 20  인용 특허 : 64

초록

A method of chemically polishing a metal layer on a substrate is provided. The metal layer is chemically polished using an electrochemical polishing (ECP) process. In the ECP process, the substrate is immersed in a chemical polishing solution including a surfactant. The surfactant in the polishing s

대표청구항

1. An electrolyte composition for removing at least a portion of a metal layer, consisting essentially of: one or more surfactants selected from the group consisting of benzopyran-containing materials, thiourea-containing materials, and aliphatic ether-containing materials; one or more chemical

이 특허에 인용된 특허 (64)

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  8. Payne Charles C. (Aurora IL), Aqueous silica compositions for polishing silicon wafers.
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  14. Tsai Chia S. (Hsin-chu TWX) Tseng Pin-Nan (Hsin-chu TWX), Chemical/mechanical planarization (CMP) apparatus and polish method.
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  41. Lee Wai Mun ; Pittman ; Jr. Charles U. ; Small Robert J., Method of removing etching residue.
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  46. Kaufman Vlasta Brusic ; Wang Shumin, Multi-oxidizer precursor for chemical mechanical polishing.
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  54. Small Robert J., Post clean treatment composition comprising an organic acid and hydroxylamine.
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  61. Carpio Ronald A. ; Jairath Rahul ; Kalpathy-Cramer Jayashree, Slurry formulation for chemical mechanical polishing of metals.
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  63. Pasch Nicholas F., Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing.
  64. Hardy L. Charles ; Trice Jennifer L., Working liquids and methods for modifying structured wafers suited for semiconductor fabrication.

이 특허를 인용한 특허 (20)

  1. Wang, You; Tu, Wen-Chiang; Liu, Feng Q.; Wang, Yuchun; Karuppiah, Lakshmanan; McClintock, William H.; Chin, Barry L., Chemical planarization of copper wafer polishing.
  2. Feeney, Paul M.; Brusic, Vlasta, Controlled electrochemical polishing method.
  3. Duboust, Alain; Sun, Lizhong; Liu, Feng Q.; Wang, Yuchun; Wang, Yan; Neo, Siew; Chen, Liang-Yuh, Electrolyte composition and treatment for electrolytic chemical mechanical polishing.
  4. Sun,Lizhong; Liu,Feng Q.; Neo,Siew; Tsai,Stan; Chen,Liang Yuh, Electrolyte with good planarization capability, high removal rate and smooth surface finish for electrochemically controlled copper CMP.
  5. Shirakashi, Mitsuhiko; Kumekawa, Masayuki; Yasuda, Hozumi; Kobata, Itsuki; Noji, Ikutaro; Yoshida, Kaori, Electrolytic processing apparatus and substrate processing apparatus and method.
  6. Park,Hong Sick; Kang,Sung Chul; Cho,Hong Je, Etchant for wire, method of manufacturing wire using etchant, thin film transistor array panel including wire and manufacturing method thereof.
  7. Mayer, Steven T.; Drewery, John S., Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation.
  8. Liu,Feng Q.; Du,Tianbao; Duboust,Alain; Hsu,Wei Yung, Method and composition for electrochemical mechanical polishing processing.
  9. Liu,Feng Q.; Du,Tianbao; Duboust,Alain; Wang,Yan; Hu,Yongqi; Tsai,Stan D.; Chen,Liang Yuh; Tu,Wen Chiang; Hsu,Wei Yung, Method and composition for polishing a substrate.
  10. Liu,Feng Q.; Tsai,Stan D.; Hu,Yongqi; Neo,Siew S.; Wang,Yan; Duboust,Alain; Chen,Liang Yuh, Method and composition for polishing a substrate.
  11. Fang, Rui; Kulkarni, Deepak; Watts, David K, Method and system for pad conditioning in an ECMP process.
  12. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  13. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  14. Mayer, Steven T.; Porter, David W., Modulated metal removal using localized wet etching.
  15. Wang, Zhihong; Wang, You; Mao, Daxin; Jia, Renhe; Tsai, Stan D.; Hu, Yongqi; Tian, Yuan A.; Chen, Liang Yuh, Process and composition for conductive material removal by electrochemical mechanical polishing.
  16. Mayer, Steven T.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  17. Mayer, Steven T.; Drewery, John; Hill, Richard S.; Archer, Timothy; Kepten, Avishai, Selective electrochemical accelerator removal.
  18. Mayer, Steven T.; Stowell, Marshall R.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  19. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  20. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
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