Hydrogen/hydrocarbon separation process, including PSA and membranes
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C07C-007/144
C07C-007/12
출원번호
US-0718999
(2000-11-22)
발명자
/ 주소
Lokhandwala, Kaaeid A.
Baker, Richard W.
출원인 / 주소
Membrane Technology and Research, Inc.
대리인 / 주소
Farrant, J.
인용정보
피인용 횟수 :
11인용 특허 :
43
초록▼
An improved process for separating hydrogen from hydrocarbons. The process includes a pressure swing adsorption step, a compression/cooling step and a membrane separation step. The membrane step uses a rubbery polymeric membrane selective for all C1-C6hydrocarbons over hydrogen. The process can prod
An improved process for separating hydrogen from hydrocarbons. The process includes a pressure swing adsorption step, a compression/cooling step and a membrane separation step. The membrane step uses a rubbery polymeric membrane selective for all C1-C6hydrocarbons over hydrogen. The process can produce three products: a high-purity hydrogen stream, an LPG stream and a light hydrocarbon fuel gas stream.
대표청구항▼
An improved process for separating hydrogen from hydrocarbons. The process includes a pressure swing adsorption step, a compression/cooling step and a membrane separation step. The membrane step uses a rubbery polymeric membrane selective for all C1-C6hydrocarbons over hydrogen. The process can prod
An improved process for separating hydrogen from hydrocarbons. The process includes a pressure swing adsorption step, a compression/cooling step and a membrane separation step. The membrane step uses a rubbery polymeric membrane selective for all C1-C6hydrocarbons over hydrogen. The process can produce three products: a high-purity hydrogen stream, an LPG stream and a light hydrocarbon fuel gas stream. requency excitation to form the ionized inert gas. 12. The method according to claim 11, wherein: the inert gas is ionized using an inductive plasma source. 13. A device for deposition of one of atoms and molecules derived from a reactive gas by chemical reaction, on a deposition surface of a substrate, comprising: a heating device, the heating device supplying an energy amount into the substrate by heating at least a deposition surface of the substrate, the energy amount less than an energy amount necessary for an epitaxial deposition of the one of atoms and molecules derived from the reactive gas on the deposition surface; a reactive gas supply device conducting the reactive gas onto the heated deposition surface of the substrate; an ionizing unit for separate ionization of an inert gas with respect to the reactive gas; and an inert gas supply device conducting the ionized inert gas onto the deposition surface of the substrate. 14. The device according to claim 13, wherein: the ionizing unit includes a microwave plasma source operating under the principle of electron cyclotron resonance. 15. The device according to one of claim 13, wherein: the ionizing unit includes a Surfatron source having a quartz Surfatron, the quartz Surfatron conducting a plasma-generating microwave field. 16. The device according to one of claim 13, wherein: the ionizing unit includes an inductive plasma source. 17. The device according to one of claim 13, wherein: the reactive supply device has a gas diffusor ring, the gas diffusor ring being arranged between an outlet of the inert gas supply device and the substrate, the outlet of the inert gas supply device being directed toward the heated deposition surface. 18. The device according to one of claim 17, wherein: the gas diffusor ring is arranged in a plane located at the distance from the heated deposition surface of the substrate and parallel to the heated deposition surface of the substrate, the gas diffusor ring peripherally surrounding the ionized inert gas exiting from the outlet of the inert gas supply device and flowing in the direction of the heated deposition surface. 19. The device according to claim 13, wherein: the substrate is arranged lying on a substrate electrode, the heating device being arranged within the substrate electrode; and the deposition surface of the substrate faces away from the substrate electrode may be heated by the heating device. 20. The device according to claim 19, wherein: the heating device includes a heat-emitting radiation device arranged in the proximity of the substrate electrode. 21. The device according to claim 13, further comprising: a vacuum pump having a pressure regulator, the pressure regulator producing a pressure in a vacuum chamber, the pressure including a range of 0.1 μbar to 100 μbar, the deposition occurring in the vacuum chamber. 22. The device according to claim 13, further comprising: a device for generating an electrical field over the heated deposition surface of the substrate. 23. A method for epitaxial deposition of one of atoms and molecules derived from a reactive gas by chemical reaction, on a deposition surface of a substrate, comprising the steps of: heating at least a deposition surface of a substrate to supply a first energy amount, the first energy amount being less than an energy amount necessary for an epitaxial deposition of one of atoms and molecules derived from the reactive gas on the deposition surface, wherein an epitaxially deposited material includes silicon, and the substrate includes porous silicon; and at least intermittently conducting an ionized inert gas onto the deposition surface to at least intermittently supply a second amount of energy through the effect of ions of the ionized inert gas on the deposition surface, a sum of the first energy amount and the second energy amount being of a sufficient total energy amount for the epitaxial dep osition of the one of atoms and molecules derived from the reactive gas onto the deposition surface, wherein the reactive gas includes one of silane and a silane mixture, and an inert gas includes at least one of helium and argon. 24. A method for epitaxial deposition of one of atoms and molecules derived from a reactive gas by chemical reaction, on a deposition surface of a substrate, comprising the steps of: heating at least a deposition surface of a substrate to supply a first energy amount, the first energy amount being less than an energy amount necessary for an epitaxial deposition of one of atoms and molecules derived from the reactive gas on the deposition surface, wherein an epitaxially deposited material includes silicon carbide, and the substrate includes porous silicon carbide; and at least intermittently conducting an ionized inert gas onto the deposition surface to at least intermittently supply a second amount of energy through the effect of ions of the ionized inert gas on the deposition surface, a sum of the first energy amount and the second energy amount being of a sufficient total energy amount for the epitaxial deposition of the one of atoms and molecules derived from the reactive gas onto the deposition surface, wherein the reactive gas includes a mixture of a silicon carrier gas and a hydrocarbon carrier gas, the silicon carrier gas including silane, the hydrocarbon carrier gas including methane, and an inert gas includes at least one of helium and argon. 25. A method for epitaxial deposition of one of atoms and molecules derived from a reactive gas by chemical reaction, on a deposition surface of a substrate, comprising the steps of: heating at least a deposition surface of a substrate to supply a first energy amount, the first energy amount being less than an energy amount necessary for an epitaxial deposition of one of atoms and molecules derived from the reactive gas on the deposition surface, wherein an epitaxially deposited material includes silicon-germanium, and the substrate includes porous silicon; and at least intermittently conducting an ionized inert gas onto the deposition surface to at least intermittently supply a second amount of energy through the effect of ions of the ionized inert gas on the deposition surface, a sum of the first energy amount and the second energy amount being of a sufficient total energy amount for the epitaxial deposition of the one of atoms and molecules derived from the reactive gas onto the deposition surface, wherein the reactive gas includes a mixture of a silicon carrier gas and germanium carrier gas, the silicon carrier gas including silane, and an inert gas includes at least one of helium and argon.
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