IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0798528
(2001-03-02)
|
우선권정보 |
DE-0009819 (2000-03-01) |
발명자
/ 주소 |
- Zeuner, Siegfried
- Hofmann, Achim
- Schropp, Roland
- Rodig, Karl-Heinz
|
출원인 / 주소 |
- TRW Airbag Systems GmbH & Co. KG
|
대리인 / 주소 |
Tarolli, Sundheim, Covell & Tummino L.L.P.
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
4 |
초록
▼
The invention relates to a method for producing propellant compacts for use in gas generators for safety devices in motor vehicles by extrusion, comprising the following steps: mixing the constituents of the propellant and stirring the mixture into a paste with a solvent so as to form a plasticiz
The invention relates to a method for producing propellant compacts for use in gas generators for safety devices in motor vehicles by extrusion, comprising the following steps: mixing the constituents of the propellant and stirring the mixture into a paste with a solvent so as to form a plasticizable mass, extruding the plasticizable mass in order to form propellant compacts, and drying the propellant compacts in order to remove the solvent, a thickening agent which increases the viscosity being added to the solvent prior to pasting in a proportion of from 0.1 to 10% by weight, relative to the solvent, and the dried propellant compacts having a density of at least 70% of the theoretical density. The invention further relates to propellant compacts obtainable in accordance with this method.
대표청구항
▼
The invention relates to a method for producing propellant compacts for use in gas generators for safety devices in motor vehicles by extrusion, comprising the following steps: mixing the constituents of the propellant and stirring the mixture into a paste with a solvent so as to form a plasticiz
The invention relates to a method for producing propellant compacts for use in gas generators for safety devices in motor vehicles by extrusion, comprising the following steps: mixing the constituents of the propellant and stirring the mixture into a paste with a solvent so as to form a plasticizable mass, extruding the plasticizable mass in order to form propellant compacts, and drying the propellant compacts in order to remove the solvent, a thickening agent which increases the viscosity being added to the solvent prior to pasting in a proportion of from 0.1 to 10% by weight, relative to the solvent, and the dried propellant compacts having a density of at least 70% of the theoretical density. The invention further relates to propellant compacts obtainable in accordance with this method. d as the charged particles. 6. The vapor-phase processing method as claimed in claim 1, wherein after the vapor-phase processing, the substrate is withdrawn outside a vapor-phase processing chamber, and a voltage is applied between a suscepter of the substrate and the reaction gas feeding unit to generate plasma discharge, whereby the inside of the vapor-phase processing chamber is cleaned. 7. The vapor-phase processing method as claimed in claim 1, wherein the vapor-phase processing is conducted under reduced pressure or under normal pressure. 8. The vapor-phase processing method as claimed in claim 1, wherein the substrate or the film on the substrate is held at a temperature of -100° C. to 500° C. or is etched or ashed in vapor phase with the reaction seeds or the radicals thereof generated by heating the catalyst to a temperature of less than the melting point thereof in the range of 800 to 2,0000° C. and catalytically reacting or thermally decomposing at least a part of the reaction gas with this catalyst heated. 9. The vapor-phase processing method as claimed in claim 8, wherein the catalyst is heated by its own resistance heating. 10. The vapor-phase processing method as claimed in claim 1, wherein a halogen gas or its compound gas, or an oxidative gas is used as the reaction gas. 11. The vapor-phase processing method as claimed in claim 10, wherein a semiconductor film, an insulation film, a high-melting metal, a conductive metal nitride or a metallic film is etched, and an organic film of a photoresist are etched or ashed. 12. The vapor-phase processing method as claimed in claim 11, wherein a compound semiconductor is made any of gallium-arsenic, gallium-nitride or gallium-phosphorus. 13. The vapor-phase processing method as claimed in claim 11, wherein the insulation film is made any of silicon oxide, impurity-containing silicon oxide, silicon nitride, silicon acid nitride or chromium oxide. 14. The vapor-phase processing method as claimed in claim 11, wherein the high-melting metal is any of tungsten, titanium, molybdenum or tantalum, and the conductive metal nitride is tungsten nitride, titanium nitride, molybdenum nitride or tantalum nitride. 15. The vapor-phase processing method as claimed in claim 11, wherein the metallic film is made any of aluminum, an aluminum alloy (containing 1% of Si or 1 to 2% of Cu) or silicide. 16. The vapor-phase processing method as claimed in claim 11, wherein the semiconductor film is made any of polycrystalline silicon, monocrystalline silicon, amorphous silicon, silicon-germanium, silicon carbide, a compound semiconductor, diamond or diamond-like carbon (DLC). 17. The vapor-phase processing method as claimed in claim 1, wherein the catalyst is formed of at least one material selected from the group consisting of tungsten, thoria-containing tungsten, molybdenum, platinum, palladium, vanadium, silicon, alumina, metal-coated ceramics and silicon carbide. 18. The vapor-phase processing method as claimed in claim 1, wherein the catalyst is made any of silicon carbide, a ceramics or conductive nitride film-coated high-melting metal, silicon nitride, silicon oxide or a conductive metal nitride. 19. The vapor-phase processing method as claimed in claim 1, wherein the reaction gas is replaced with a film-forming starting gas, and a predetermined film is formed on the substrate by feeding this starting gas. 20. The vapor-phase processing method as claimed in claim 19, wherein after the predetermined film is selectively removed by the etching with use of a mask, the mask is removed by the ashing, further the reaction gas is replaced with the film-forming starting gas which is contacted with the catalyst heated, and kinetic energy is imparted to the resulting reaction seeds or the precursors thereof to form the predetermined film on the substrate. 21. The vapor-phase processing method as claimed in claim 19, wherein the film is formed under reduced pressure or under normal pressure. 22. T
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