초록

The present invention concerns a method to produce a porous oxygen-silicon insulating layer comprising following steps: applying a silicon oxygen layer to a substrate exposing the said substrate to a HF ambient.

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1. A method to produce a porous oxygen-silicon insulating layer comprising the following steps: applying an oxygen-silicon insulating layer to a substrate; and exposing the oxygen-silicon insulating layer to a HF ambient, whereby at least one of a porosity of the oxygen-silicon insulating layer

1. A method to produce a porous oxygen-silicon insulating layer comprising the following steps: applying an oxygen-silicon insulating layer to a substrate; and exposing the oxygen-silicon insulating layer to a HF ambient, whereby at least one of a porosity of the oxygen-silicon insulating layer and a mean pore size of the oxygen-silicon insulating layer is increased, characterized in that the oxygen-silicon insulating layer comprises at least Si, C and O. 2. A method as in claim 1, characterized in that the oxygen-silicon insulating layer further comprises N. 3. A method as in claim 1, characterized in that the oxygen-silicon insulating layer further comprises H. 4. A method as in claim 1, characterized in that the oxygen-silicon insulating layer further comprises N and H. 5. A method as in claim 1, characterized in that the oxygen-silicon insulating layer comprises a hydrogenated silicon oxycarbide layer. 6. A method as in claim 1, wherein the step of applying an oxygen-silicon insulating layer comprises depositing a hydrogenated silicon oxycarbide layer by chemical vapor deposition. 7. A method as in claim 5, characterized in that the hydrogenated silicon oxycarbide layer has a dielectric constant lower than 2.3. 8. A method as in claim 5, characterized in that the hydrogenated silicon oxycarbide layer has a dielectric constant below 2.0. 9. A method as in claim 5, characterized in that a HF concentration of the HF ambient is regulated to increase the mean pore size of the oxygen-silicon insulating layer from 1 to 3 nm, while a thickness of the oxygen-silicon insulating layer remains unchanged. 10. A method as in claim 9, characterized in that the HF concentration is lower than 5% dissolved in water. 11. A method as in claim 10, characterized in that the HF concentration is lower than 2% dissolved in water. 12. A method as in claim 9, characterized in that the step of exposing the oxygen-silicon insulating layer to a HF ambient occurs at room temperature. 13. A method as in claim 9, characterized in that the step of exposing the oxygen-silicon insulating layer to a HF ambient occurs at atmospheric pressure. 14. A method as in claim 9, characterized in that a duration of the step of exposing the oxygen-silicon insulating layer to a HF ambient is less than 10 minutes. 15. A method as in claim 9, characterized in that a duration of the step of exposing the oxygen-silicon insulating layer to a HF ambient is less than 6 minutes. 16. A method as in any of the claims 5, 6 or 9, characterized in that the HF ambient comprises a HF solution, and wherein a concentration of the HF solution and a duration of the step of exposing the oxygen-silicon insulating layer to a HF ambient are related to a nature of the oxygen-silicon insulating layer.