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Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/01
  • H01L-027/12
  • H01L-031/0392
출원번호 US-0020807 (2001-12-18)
우선권정보 JP-0035820 (1998-02-18)
발명자 / 주소
  • Ohmi, Kazuaki
  • Sakaguchi, Kiyofumi
  • Yanagita, Kazutaka
출원인 / 주소
  • Canon Kabushiki Kaisha
대리인 / 주소
    Fitzpatrick, Cella, Harper & Scinto
인용정보 피인용 횟수 : 18  인용 특허 : 17

초록

A composite member containing a separation area inside. A mechanical strength of the separation area is non-uniform along a surface of the composite member or along a bonded face. A mechanical strength of a peripheral portion of the separation area is locally low.

대표청구항

1. A composite member comprising a separation area inside, wherein mechanical strength of the separation area is non-uniform along a surface of the composite member and wherein portions different from each other in porosity, thickness or ion implantation amount are formed in the separation area such

이 특허에 인용된 특허 (17)

  1. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Fabrication process for a semiconductor substrate.
  2. Fujimoto Kazuaki,JPX ; Furukawa Hiroshi,JPX ; Kato Hirotaka,JPX, Jig for peeling a bonded wafer.
  3. Tayanaka Hiroshi,JPX, Method for making thin film semiconductor.
  4. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
  5. Yoshizawa, Katsuo; Sato, Tsutomu; Mitani, Kiyoshi; Katayama, Masatake, Method for production of SOI substrate.
  6. Matsushita Takeshi,JPX ; Tayanaka Hiroshi,JPX, Method for separating a device-forming layer from a base body.
  7. Aga Hiroji,JPX ; Mitani Kiyoshi,JPX ; Inazuki Yukio,JPX, Method of fabricating an SOI wafer and SOI wafer fabricated thereby.
  8. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX ; Atoji Tadashi,JPX, Method of manufacturing semiconductor article.
  9. Aspar Bernard,FRX ; Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Method of producing a thin layer of semiconductor material.
  10. Bozler Carl O. (Sudbury MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert W. (Weymouth MA), Method of producing sheets of crystalline material.
  11. Iwasaki Yukiko,JPX ; Nakagawa Katsumi,JPX ; Yonehara Takao,JPX ; Nishida Shoji,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate.
  12. Sakaguchi Kiyofumi,JPX ; Yonehara Takao,JPX, Process for production of semiconductor substrate.
  13. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Semiconductor article with porous structure.
  14. Yonehara Takao (Atsugi JPX), Semiconductor member and process for preparing semiconductor member.
  15. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Semiconductor substrate and method of manufacturing the same.
  16. Kwon Oh-Kyong,KRX, Silicon on insulator semiconductor substrate and fabrication method therefor.
  17. Sakaguchi Kiyofumi,JPX ; Sato Nobuhiko,JPX, Substrate and production method thereof.

이 특허를 인용한 특허 (18)

  1. Lee, Sang Chul; Byun, Jung Soo; Park, Jin Seon; Lee, Doo Hwan, Embedded printed circuit board and method of manufacturing the same.
  2. Lee, Sang Chul; Byun, Jung Soo; Park, Jin Seon; Lee, Doo Hwan, Embedded printed circuit board and method of manufacturing the same.
  3. Nakata, Mitsuru; Takechi, Kazushige; Kanoh, Hiroshi, Manufacturing method of thin film device substrate.
  4. Chan, Yick Chuen; Cheung, Nathan W.; Chan, Chung, Method and structure for hydrogenation of porous monocrystalline silicon substrates.
  5. Chan, Yick Chuen; Ho, Pui Yee Joan; Cheung, Nathan W.; Chan, Chung, Method and structure for hydrogenation of silicon substrates with shaped covers.
  6. Chan, Yick Chuen; Ho, Pui Yee Joan; Cheung, Nathan W.; Wong, Man; Chan, Chung, Method and structure for hydrogenation of silicon substrates with shaped covers.
  7. Schwarzenbach,Walter; Maleville,Christophe; Ben Mohamed,Nadia, Method of detaching a layer from a wafer using a localized starting area.
  8. Cherekdjian, Sarko; Cites, Jeffrey Scott; Couillard, James Gregory; Maschmeyer, Richard Orr; Moore, Michael John; Usenko, Alex, Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation.
  9. Cherekdjian, Sarko; Cites, Jeffrey Scott; Couillard, James Gregory; Maschmeyer, Richard Orr; Moore, Michael John; Usenko, Alex, Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation.
  10. Shibata, Masatomo; Oshima, Yuichi; Eri, Takeshi; Usui, Akira; Sunagawa, Haruo, Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method.
  11. Takizawa, Ritsuo, SOI substrate and method for producing the same, solid-state image pickup device and method for producing the same, and image pickup apparatus.
  12. Gadkaree,Kishor Purushottam, Semiconductor on glass insulator made using improved ion implantation process.
  13. Cherekdjian, Sarko, Semiconductor structure made using improved multiple ion implantation process.
  14. Cherekdjian, Sarko, Semiconductor structure made using improved multiple ion implantation process.
  15. Cherekdjian, Sarko, Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process.
  16. Cherekdjian, Sarko, Semiconductor structure made using improved simultaneous multiple ion implantation process.
  17. Sakaguchi,Kiyofumi; Sato,Nobuhiko, Semiconductor substrate, semiconductor device, and method of manufacturing the same.
  18. Ohkubo, Yasunori, Semiconductor substrate, semiconductor device, and processes of production of same.
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