초록 ▼

A flexible reflective insulating structure includes a layer of flexible fiber-based material, and a flexible metallic layer having a first surface of emissivity less than 0.1. The metallic layer is attached to the layer of fiber-based material with its first surface facing towards the layer of fiber

A flexible reflective insulating structure includes a layer of flexible fiber-based material, and a flexible metallic layer having a first surface of emissivity less than 0.1. The metallic layer is attached to the layer of fiber-based material with its first surface facing towards the layer of fiber-based material. The fiber-based material is preferably attached to the metallic layer in a manner such that the emissivity of at least about 85% of the first surface, and preferably at least about 95% and most preferably at least about 97% is substantially unaffected.

대표청구항 ▼

A flexible reflective insulating structure includes a layer of flexible fiber-based material, and a flexible metallic layer having a first surface of emissivity less than 0.1. The metallic layer is attached to the layer of fiber-based material with its first surface facing towards the layer of fiber

A flexible reflective insulating structure includes a layer of flexible fiber-based material, and a flexible metallic layer having a first surface of emissivity less than 0.1. The metallic layer is attached to the layer of fiber-based material with its first surface facing towards the layer of fiber-based material. The fiber-based material is preferably attached to the metallic layer in a manner such that the emissivity of at least about 85% of the first surface, and preferably at least about 95% and most preferably at least about 97% is substantially unaffected. t layer to form a photoresist mask having at least one opening; and using the photoresist mask, etching the silicon oxide film with an etchant having a reactive agent by continuously varying the concentration of the reactive agent in the etchant to correspond to the concentration of the carbon through the film during etching. 10. The method of claim 9, comprising etching the silicon oxide film with an etchant comprising a mixture containing a fluorinated organic, oxygen and an inert gas. 11.The method of claim 10, comprising continuously varying the concentration of oxygen during etching the silicon oxide film. 12. The method of claim 9, comprising increasing then decreasing the concentration of the reactive agent during etching. 13. The method of claim 9, comprising continuously and linearly varying the reactive agent concentration.