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The process provides constant electric power from a combination of a wind energy generator and a firm secondary generator. The wind energy generator and the secondary generator supply electricity directly to a utility transmission system. The secondary generator must be able to provide power on dema

The process provides constant electric power from a combination of a wind energy generator and a firm secondary generator. The wind energy generator and the secondary generator supply electricity directly to a utility transmission system. The secondary generator must be able to provide power on demand that will meet a utility's needs. The secondary generator is preferably a natural gas turbine, but may be a hydrogen fuel cell, a diesel internal combustion engine, or any other similar technology.

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The process provides constant electric power from a combination of a wind energy generator and a firm secondary generator. The wind energy generator and the secondary generator supply electricity directly to a utility transmission system. The secondary generator must be able to provide power on dema

The process provides constant electric power from a combination of a wind energy generator and a firm secondary generator. The wind energy generator and the secondary generator supply electricity directly to a utility transmission system. The secondary generator must be able to provide power on demand that will meet a utility's needs. The secondary generator is preferably a natural gas turbine, but may be a hydrogen fuel cell, a diesel internal combustion engine, or any other similar technology. leaning composition of claim 11, wherein the low k dielectric layer comprises a carbon-doped low k dielectric material. 17. The cleaning composition of claim 16, wherein the low k dielectric layer comprises silicon oxide formed by chemical vapor deposition of a carbon-substituted silane precursor and an oxygen source gas. 18. The cleaning composition of claim 16, wherein the low k dielectric layer is formed by deposition of trimethylsilane and N2O. 19. The cleaning composition of claim 17, wherein the low k dielectric layer is formed by deposition of trimethylsilane and O2. 20. A cleaning composition, comprising: an aqueous solution comprising about 10 to about 40 wt % trimethylammonium fluoride to selectively etch a dielectric antireflective coating layer overlying a low k dielectric layer. 21. The cleaning composition of claim 20, comprising an amount of trimethylammonium fluoride to effect an etch rate ratio of the dielectric antireflective coating layer: the dielectric layer of greater than 5:1. 22. The cleaning composition of claim 20, comprising an amount of trimethylammonium fluoride to effect an etch rate ratio of the dielectric antireflective coating layer: the low k dielectric layer of greater than 10:1. 23. The cleaning composition of claim 20, comprising an amount of trimethylammonium fluoride to effect an etch rate ratio of the dielectric antireflective coating layer: the low k dielectric layer of greater than 100:1. 24. The cleaning composition of claim 20, comprising amounts of the trimethylammonium fluoride such that less than 50 angstroms of the low k dielectric layer is removed after contact of the cleaning composition for up to about 15 minutes. 25. The cleaning composition of claim 20, further comprising 0 to about 10 wt % hydrogen fluoride. 26. The cleaning composition of claim 20, further comprising 0 to about 25 wt % trimethylammonium hydroxide. 27. The cleaning composition of claim 20, wherein the low k dielectric layer comprises a carbon-doped low k dielectric material. 28. The cleaning composition of claim 20, wherein the dielectric antireflective coating layer comprises a silicon-rich oxynitride or silicon-rich oxide. 29. The cleaning composition of claim 28, wherein the dielectric antireflective coating layer comprises a silicon-rich oxynitride of the formula SixOyNz:H where x is 0.30 to 0.65, y is 0.02 to 0.56, and z is 0.05 to 0.33. 30. The cleaning composition of claim 28, wherein the dielectric antireflective coating layer comprises a silicon-rich oxide of the formula SixOy:H, where x is 0.30 to 0.65, and y is 0.25 to 0.60. 31. A cleaning composition comprising: an aqueous solution comprising one or more cleaning agents to selectively remove a dielectric antireflective coating layer overlying a dielectric layer at an etch rate of the dielectric antireflective coating layer to the dielectric layer that is greater than the etch rate of the dielectric antireflective coating layer to a TEOS layer; the one or more cleaning agents comprising trimethylammonium fluoride. 32. A cleaning composition comprising: an aqueous solution comprising one or more cleaning agents to selectively remove a dielectric antireflective coating layer overlying a dielectric layer at an etch rate ratio of the dielectric antireflective coating layer to the dielectric layer of greater than 2:1; the one or more cleaning agents comprising trimethylammonium fluoride. 33. A cleaning composition comprising: an aqueous solution comprising trimethylammonium fluoride to selectively remove a dielectric antireflective coating layer overlying a dielectric layer with substantially no etching of the dielectric layer at an etch rate ratio of the dielectric antireflective coating layer to the dielectric layer of greater than 2:1. 34. A cleaning composition comprising: an aqueous solution comprising trimethylammonium fluoride to selectively remove