초록 ▼

A method for making a thin film device or pyroelectric sensor is provided. A film layer of thin film functional material is grown on a large diameter growth substrate. One or more protective layers may be deposited on the surface of the growth substrate before the thin film functional material is de

A method for making a thin film device or pyroelectric sensor is provided. A film layer of thin film functional material is grown on a large diameter growth substrate. One or more protective layers may be deposited on the surface of the growth substrate before the thin film functional material is deposited. Hydrogen is implanted to a selected depth within the growth substrate or within a protective layer to form a hydrogen ion layer. The growth substrate and associated layers are bonded to a second substrate. The layers are split along the hydrogen ion implant and the portion of the growth substrate and associated layers that are on the side of the ion layer away from the second substrate are removed.

대표청구항 ▼

1. A method for making a pyroelectric sensor, comprising the steps of: (a) depositing at least one protective layer on the surface of a growth substrate; (b) growing a layer of pyroelectric thin film functional material on the at least one protective layer; (c) implanting hydrogen to a selected

1. A method for making a pyroelectric sensor, comprising the steps of: (a) depositing at least one protective layer on the surface of a growth substrate; (b) growing a layer of pyroelectric thin film functional material on the at least one protective layer; (c) implanting hydrogen to a selected depth within the growth substrate or within the at least one protective layer to form a hydrogen ion layer so as to divide the material having the growth substrate and the at least one protective layer into distinct portions; (d) depositing at least one layer of metal on the pyroelectric thin film layer; (e) providing a conductive connection between the material having the thin film layer, and a second substrate, the second substrate comprises circuitry; and (f) splitting the material having the growth substrate and the at least one protective layer along the implanted ion layer and removing the portion of the material which is on the side of the ion layer away from the second substrate wherein step (e) is carried out by fabricating a conductive connection between the second substrate circuitry and the second substrate surface; depositing a conductive layer on the surface of the second substrate, wherein the conductive layer is in contact with the conductive connection; and fabricating at least one post extending from the conductive layer to the metal layer of step (c) for thermally insulating the CMOS or GaAs circuitry from the thin film pyroelectric layer, and wherein the at least one post comprises a material selected from one of a group consisting of a conductive epoxy, amorphous silicon, and InSnO.