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An article includes a silicon-containing substrate and a modified mullite coating. The modified mullite coating comprises mullite and a modifier component that reduces cracks in the modified mullite coating. The article can further comprise a thermal barrier coating applied to the modified mullite c

An article includes a silicon-containing substrate and a modified mullite coating. The modified mullite coating comprises mullite and a modifier component that reduces cracks in the modified mullite coating. The article can further comprise a thermal barrier coating applied to the modified mullite coating. The modified mullite coating functions as a bond coating between the external environmental/thermal barrier coating and the silicon-containing substrate. In a method of forming an article, a silicon-containing substrate is formed and a modified mullite coating is applied. The modified mullite coating comprises mullite and a modifier component that reduces cracks in the modified mullite coating.

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An article includes a silicon-containing substrate and a modified mullite coating. The modified mullite coating comprises mullite and a modifier component that reduces cracks in the modified mullite coating. The article can further comprise a thermal barrier coating applied to the modified mullite c

An article includes a silicon-containing substrate and a modified mullite coating. The modified mullite coating comprises mullite and a modifier component that reduces cracks in the modified mullite coating. The article can further comprise a thermal barrier coating applied to the modified mullite coating. The modified mullite coating functions as a bond coating between the external environmental/thermal barrier coating and the silicon-containing substrate. In a method of forming an article, a silicon-containing substrate is formed and a modified mullite coating is applied. The modified mullite coating comprises mullite and a modifier component that reduces cracks in the modified mullite coating. T: A New High-Voltage Power MOSFET Structure," IEEE Electron Device Letters, vol. 18, No. 12, pp. 589-591, Dec. 1997. Ranbir Singh, Sei-Hyung Ryu and John W. Palmour, "High Temperature, High Current, 4H-SiC Accu-DMOSFET," Materials Science Forum vols. 338-342, pp. 1271-1274, 2000. Y. Wang, C. Weitzel, and M. Bhatnagar, "Accumulation-Mode SiC Power MOSFET Design Issues," Materials Science Forum, vols. 338-342, pp. 1287-1290. A.K. Agarwal, N.S. Saks, S.S. Mani, V.S. Hegde and P.A. Sanger, "Investigation of Lateral RESURF, 6H-SiC MOSFETs," Materials Science Forum, vols. 338-342, pp. 1307-1310, 2000. S. Sridevan and B. Jaynat Baliga, "Lateral N-Channel Inversion Mode 4H-SiC MOSFET's," IEEE Electron Device Letters, vol. 19, No. 7, pp. 228-230, Jul. 1998. D. Alok, E. Arnold, and R. Egloff, "Process Dependence of Inversion Layer Mobility in 4H-SiC Devices," Materials Science Forum, vols. 338-342, pp. 1077-1080, 2000. K. Ueno and Tadaaki Oikawa, "Counter-Doped MOSFET's of 4H-SiC." IEEE Electron Device Letters, vol. 20, No. 12, pp. 624-626, Dec. 1999. V. R. Vathulya, H. Shang, and M. H. White, "A Novel 6H-SiC Power DMOSFET with Implanted P-Well Spacer." IEEE Electron Device Letters, vol. 20, No. 7, Jul. 1999, pp. 354-356. A.K. Agarwal, S. Seshadri, and L. B. Rowland, "Temperature Dependence of Fowler-Nordheim Current in 6H-and 4H-SiC MOS Capacitors." IEEE Electron Device Letters, vol. 18, No. 12, Dec. 1997, pp. 592-594. P.J. Tobin, Y. Okada, S. A Ajuria, V. Lakhotia, W. A Feil, and R. I. Hedge, "Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)." Journal of Applied Physics. vol. 75, No. 3, Feb. 1, 1994, pp. 1811-1817. Sze, S.M. Physics of Semiconductor Devices, John Wiley & Sons, pp. 383-390. H.F. Li, S. Dimitrijev, H.B. Harrison, D. Sweatman, and P.T. Tanner. "Improving SiO2Grown on P-Type 4H-SiC by NO Annealing." Materials Science Forum. vols. 264-268 (1998) pp. 869-872. K. Ueno, R. Asai, and T. Tsuji. "4H-SiC MOSFET's Utilizing the H2Surface Cleaning Technique." IEEE Electron Device Letters, vol. 19, No. 7, Jul. 1998, pp. 244-246. Chung et al. "The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC," Materials Science Forum. (2000) vols. 338-342, pp. 1097-1100. Pantelides et al. "Atomic-Scale Engineering of the SiC-SiO2Interface," Materials Science Forum. (2000) vols. 338-342, pp. 1133-1136. Chakraborty et al. "Interface properties of N2O-annealed SiO2/SiC systems," Proc. 2000 IEEE Electron Devices Meeting. Hong Kong, China, Jun. 24, 2000, pp. 108-111. Lipkin et al. "Cha ges and State-of-the-Art Oxides in SiC," Ma Soc. Symp. Proc. vol. 640, Nov. 2000, pp. 27-29. Jamet, et al. "Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiC," Applied Physics Letters. vol. 79, No. 3, Jul. 16, 2001, pp. 323-5. International Search Report, PCT/US01/42414, Apr. 23, 2002, 10 pages. Agarawal et al. "A Critical Look at the Performance Advantages and Limitations of 4H-SiC Power UMOSFET Structures," 1996 IEEE ISPSD and IC's Proc. , May 20-23, 1996, pp. 119-122. Lipkin et al. "Insulator Investigation on SiC for Improved Reliability," IEEE Transactions on Electron Devices. vol. 46, No. 3, Mar. 1999, pp. 525-532. Agarwal e