초록 ▼

A semiconductor device may include a substrate and an insulating layer formed on the subtrate. A fin may be formed on the insulating layer and may include a number of side surfaces and a top surface. A first gate may be formed on the insulating layer proximate to one of the number of side surfaces o

A semiconductor device may include a substrate and an insulating layer formed on the subtrate. A fin may be formed on the insulating layer and may include a number of side surfaces and a top surface. A first gate may be formed on the insulating layer proximate to one of the number of side surfaces of the fin. A second gate and may be formed on the insulating layer separate from the first gate and proximate to another one of number of side surfaces of the fin.

대표청구항 ▼

1. A semiconductor device, comprising: a substrate; an insulating layer formed on the substrate; a fin formed on the insulating layer and including a plurality of side surfaces and a top surface; a first gate formed on the insulating layer proximate to one of plurality of side surfaces of the

1. A semiconductor device, comprising: a substrate; an insulating layer formed on the substrate; a fin formed on the insulating layer and including a plurality of side surfaces and a top surface; a first gate formed on the insulating layer proximate to one of plurality of side surfaces of the fin; and a second gate formed on the insulating layer separate from the first gate and proximate to another one of plurality of side surfaces of the fin. 2. The semiconductor device of claim 1 wherein the second gate is formed at an opposite side of the fin from the first gate. 3. The semiconductor device of claim 2, wherein the first and second gates respectively include first and second gate contacts. 4. The semiconductor device of claim 1, further comprising: a plurality of dielectric layers respectively formed along the plurality of side surfaces of the fin. 5. The semiconductor device of claim 4, wherein the first and second gates respectively abut different ones of the plurality of dielectric layers. 6. The semiconductor device of claim 1, wherein the fin comprises at least one of silicon and germanium. 7. The semiconductor device of claim 1, wherein the insulating layer comprises a buried oxide layer. 8. The semiconductor device of claim 1, further comprising: a source region and a drain region formed above the insulating layer and adjacent a respective first and second end of the fin. 9. The semiconductor device of claim 1, further comprising: a dielectric layer comprising at least one of a nitride and an oxide formed over the top surface of the fin. 10. The semiconductor device of claim 9, wherein a top surface of the dielectric layer, a top surface of the first gate, and a top surface of the second gate are substantially coplanar. 11. A semiconductor device, comprising: a substrate; an insulating layer formed on the substrate; a conductive fin formed on the insulating layer; gate dielectric layers formed on side surfaces of the conductive fin; a first gate electrode formed on the insulating layer, the first gate electrode disposed on a first side of the conductive fin adjacent one of the gate dielectric layers; and a second gate electrode formed on the insulating layer, the second gate electrode disposed on an opposite side of the conductive fin adjacent another one of the gate dielectric layers and spaced apart from the first gate electrode. 12. The semiconductor device of claim 11, further comprising: a dielectric cap formed over a top surface of the conductive fin. 13. The semiconductor device of claim 12, wherein neither of the first gate electrode and the second gate electrode extend over the dielectric cap. 14. The semiconductor device of claim 12, wherein top surfaces of the first gate electrode, the second gate electrode, and the dielectric cap are substantially coplanar. 15. The semiconductor device of claim 11, wherein the first gate electrode and the second gate electrode are aligned on opposite sides of the conductive fin and are not electrically connected to each other.