초록 ▼

The invention relates to a connection-oriented packet-based communication network, in which the terminal and the network access point of the terminal may move in the network. When the access point of the terminal changes during an active connection, the routing connection can also be changed from an

The invention relates to a connection-oriented packet-based communication network, in which the terminal and the network access point of the terminal may move in the network. When the access point of the terminal changes during an active connection, the routing connection can also be changed from an old access point to a new one. The old access point may comprise buffered cells, which can be transferred to the new access point without packet loss. A connection from the old access point to the new one is established dynamically, when required. The connection establishment is controlled by a third network element, which is responsible for controlling the change of access point. The old access point can be arranged to send signaling messages and to establish a connection without requiring any additional intelligence at the access point. Upon the connection being established, the old access point sends buffered unsent packets to the new access point.

대표청구항 ▼

The invention relates to a connection-oriented packet-based communication network, in which the terminal and the network access point of the terminal may move in the network. When the access point of the terminal changes during an active connection, the routing connection can also be changed from an

The invention relates to a connection-oriented packet-based communication network, in which the terminal and the network access point of the terminal may move in the network. When the access point of the terminal changes during an active connection, the routing connection can also be changed from an old access point to a new one. The old access point may comprise buffered cells, which can be transferred to the new access point without packet loss. A connection from the old access point to the new one is established dynamically, when required. The connection establishment is controlled by a third network element, which is responsible for controlling the change of access point. The old access point can be arranged to send signaling messages and to establish a connection without requiring any additional intelligence at the access point. Upon the connection being established, the old access point sends buffered unsent packets to the new access point. , the substrate is a InP substrate or a GaAs substrate. 8. The folded cavity surface emitting laser (FCSEL) of claim 6 wherein, the second cladding layer includes a confinement layer. 9. The folded cavity surface emitting laser (FCSEL) of claim 8 wherein, the confinement layer is a strained Indium-Aluminum-Arsenide (InAlAs) layer that can be oxidized laterally. 10. The folded cavity surface emitting laser (FCSEL) of claim 6 wherein, the first and second cladding layers are InGaAsP and have bandgaps wider than the bandgap of the active region. 11. The folded cavity surface emitting laser (FCSEL) of claim 1 further comprising: a lens to focus the photons for launching into an optical fiber. 12. The folded cavity surface emitting laser (FCSEL) of claim 1 wherein, the center wavelength is 1300 nanometers and the narrow wavelength range is 1275 nanometers to 1325 nanometers. 13. The folded cavity surface emitting laser (FCSEL) of claim 12 wherein, the active region is formed of at least one quantum well using InGaAsP or InAlGaAs quantum wells. 14. The folded cavity surface emitting laser (FCSEL) of claim 1 wherein, the center wavelength is 1550 nanometers and the narrow wavelength range is 1525 nanometers to 1575 nanometers. 15. The folded cavity surface emitting laser (FCSEL) of claim 14 wherein, the active region is formed of at least one quantum well using InGaAsP or InGaAs quantum wells. 16. The folded cavity surface emitting laser (FCSEL) of claim 1 wherein, the first angled facet and the second angled facet are parallel to each other, each having an angle of substantially forty-five degrees to the incident photons from the active region. 17. The folded cavity surface emitting laser (FCSEL) of claim 6 wherein, the first angled facet and the second angled facet extend through the first cladding layer, the second cladding layer the contact layer and a portion of the narrow bandwidth distributed Bragg reflector. 18. The folded cavity surface emitting laser (FCSEL) of claim 6 wherein, the FCSEL is a bottom emitting semiconductor laser and the FCSEL further comprises: a standard quarter-wavelength distributed Bragg reflector over the active region to reflect photons emitted from the active region back into the active region, and wherein, the narrow bandwidth distributed Bragg reflector further to emit photons of sufficient energy having the wavelength within the narrow wavelength range. 19. The folded cavity surface emitting laser (FCSEL) of claim 18 wherein, the first angled facet and the second angled facet extend through the first cladding layer, the second cladding layer, and a portion of the standard quarter-wavelength distributed Bragg reflector. 20. The folded cavity surface emitting laser (FCSEL) of claim 1 wherein, the narrow bandwidth distributed Bragg reflector has a reflectivity response substantially as illustrated in FIG. 2. 21. The folded cavity surface emitting laser (FCSEL) of claim 1 wherein, the narrow bandwidth distributed Bragg reflector to avoid reflecting photons having a wavelength outside the narrow wavelength range back into the active region. 22. A semiconductor laser comprising: a narrow bandwidth distributed Bragg reflector having a narrow wavelength range of a relatively high reflectivity response centered around a center wavelength, the narrow bandwidth distributed Bragg reflector to reflect photons having a wavelength within the narrow wavelength range; an active region over the narrow bandwidth distributed Bragg reflector, the active region formed to lase and emit photons at a wavelength within the narrow wavelength range and couple photons into the narrow bandwidth distributed Bragg reflector; and the narrow bandwidth distributed Bragg reflector to reflect photons having the wavelength within the narrow wavelength range back into the active region for amplification. 23. The semiconductor laser of claim 22 where