초록 ▼

A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration

A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.

대표청구항 ▼

A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration

A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit. ric layer comprises exciting surface plasmons using a prism disposed in a table of a planarization tool. 15. The method of claim 14, wherein detecting photons reflected from the conductive film to determine the change in the surface plasmon resonant angle comprises detecting a shift in a minimum in reflected photon intensity using a charge-coupled device (CCD) detector. 16. The method of claim 11, wherein exciting surface plasmons in the conductive film disposed in the dielectric layer comprises exciting surface plasmons using laser photons focused on the plane substantially coplanar with or parallel to the surface of the conductive film. 17. The method of claim 16, wherein detecting photons reflected from the conductive film to determine the change in the surface plasmon resonant angle comprises detecting a shift in a minimum in reflected photon intensity using a charge-coupled device (CCD) detector. 18. The method of claim 11, wherein detecting photons reflected from the conductive film to determine the change in the surface plasmon resonant angle comprises detecting a shift in a minimum in reflected photon intensity using a charge-coupled device (CCD) detector. 19. The method of claim 11, wherein exciting surface plasmons in the conductive film disposed in the dielectric layer comprises exciting surface plasmons using collimated laser photons. 20. The method of claim 19, wherein detecting photons reflected from the conductive film to determine the change in the surface plasmon resonant angle comprises detecting a change in reflected photon intensity at an incident photon angle using a charge-coupled device (CCD) detector and photons polarized substantially parallel to the plane substantially coplanar with or parallel to the surface of the conductive film and normalizing reflectivity of the photons polarized substantially perpendicular to the plane with reflectivity of the photons polarized substantially parallel to the plane. 21. A method, comprising: planarizing a dielectric layer disposed above a structure layer using a planarization process, said dielectric layer having a conductive film positioned therein; transmitting light through the dielectric layer such that at least a portion of the light reflects from the conductive film and excites surface plasmons in the conductive film; detecting an intensity of the reflected light; and determining an endpoint of the planarization process based on the intensity of the reflected light. 22. The method of claim 1, wherein the conductive film comprises a grating structure, and wherein transmitting the light through the dielectric layer such that at least the portion of the light reflects from the conductive film comprises transmitting the light through the dielectric layer such that at least the portion of the light reflects from the grating structure. 23. The method of claim 21, wherein determining the endpoint of the planarization process based on the intensity of the reflected light comprises determining a thickness of the dielectric layer based on the intensity of the reflected light. 24. The method of claim 23, wherein determining the thickness of the dielectric layer based on the intensity of the reflected light comprises detecting a change in a surface plasmon resonant angle based on the intensity of the reflected light. 25. The method of claim 24, wherein detecting the change in the surface plasmon resonant angle comprises detecting a shift in an intensity minimum of the reflected light. 26. The method of claim 21, wherein transmitting the light through the dielectric layer comprises transmitting light polarized parallel to a plane of the conductive film. 27. The method of claim 21, wherein transmitting the light through the dielectric layer comprises transmitting the light comprises transmitting the light through a prism deployed between a light source and the dielectric layer. 28. The method of claim 21, wherein transmitting light through the dielectric layer com prises transmitting laser light through the dielectric layer. 29. A method, comprising: forming a first dielectric layer above a semiconductor structure layer; forming a conductive film in the first dielectric layer; forming a second dielectric layer above the conductive film and at least a portion of the first dielectric layer such that the conductive film is bounded on all sides by the first and second dielectric layers; planarizing a surface of the second dielectric layer; transmitting light through the surface and into the second dielectric layer such that at least a portion of the light reflects from the conductive film and excites surface plasmons in the conductive film; detecting an intensity of the reflected light emerging from the surface of the second dielectric layer; and determining an endpoint of the planarization process based on the intensity of the reflected light. 30. The method of claim 29, wherein forming the conductive film comprises forming a grating structure. 31. The method of claim 30, wherein forming the grating structure comprises: forming a first portion of the conductive film in the first dielectric layer; forming a third dielectric layer above the first portion of the conductive film; patterning the third dielectric layer to expose a plurality of areas of the first portion of the conductive film; forming a second portion of the conductive film above the third dielectric layer and the first portion of the conductive film such that the second portion of the conductive film contacts the plurality of exposed areas of the first portion of the conductive film; and planarizing the second portion of the conductive film. 32. The method of claim 31, wherein patterning the third dielectric layer to expose the plurality of areas of the first portion of the conductive film comprises pattering the dielectric layer to form trenches of differing widths. 33. The method of claim 30, wherein forming the grating structure comprises forming the grating structure by scoring or grooving the conductive film. 34. The method of claim 31, wherein patterning the third dielectric layer to expose the plurality of areas of the first portion of the conductive film comprises pattering the dielectric layer to form trenches of differing depths. 35. The method of claim 29, wherein determining the endpoint of the planarization process based on the intensity of the reflected light comprises determining a thickness of the dielectric layer based on the intensity of the reflected light. 36. The method of claim 35, wherein determining the thickness of the dielectric layer based on the intensity of the reflected light comprises detecting a change in a surface plasmon resonant angle based on the intensity of the reflected light. 37. The method of claim 36, wherein detecting the change in the surface plasmon resonant angle comprises detecting a shift in an intensity minimum of the reflected light. 38. The method of claim 29, wherein planarizing the surface of the second dielectric layer comprises performing a chemical mechanical planarization of the surface. patent application Ser. No. 08/520,079. Dictionary of Semiconductor Terms pp. 454-455, Mar. 20, 1999.