[미국특허]
Method and apparatus for thermal management of integrated circuits
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/34
H01L-035/04
출원번호
US-0498826
(2000-02-04)
발명자
/ 주소
Cordes, Michael James
Cordes, Steven Alan
Ghoshal, Uttam Shyamalindu
Robinson, Errol Wayne
Speidell, James Louis
출원인 / 주소
International Business Machines Corporation
대리인 / 주소
Yee, Duke W.Salys, Casimer K.Walder, Jr., Stephen J.
인용정보
피인용 횟수 :
29인용 특허 :
10
초록▼
Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and
Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved.
대표청구항▼
Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and
Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved. ncapsulation in Copper Wiring", Advanced Metallization for Devices and Circuits-Science, Technology and Manufacturability, Materials Research Society Symposium Proceedings, 337, pp. 225-231, (Apr. 1994). Park, C.W., et al., "Activation Energy for Electromigration in Cu Films", Applied Physics Letters, 59(, 175-177, (Jul. 6, 1991). Radzimski, Z.J., et al., "Directional Copper Deposition using d-c Magnetron Self-sputtering", J. Vac. Sci. Technol. B, 16(3), pp. 1102-1106, (1998). Ramos, T., et al., "Nanoporous Silica for Dielectric Constant Less Than 2", Conference Proceedings ULSI XII--1997 Materials Research Society, 455-461, (1997). Rath, J.K., et al., "Low-Temperature deposition of polycrystalline silicon thin films by hot-wire CVD", Solar Energy Materials and Solar Cells, 48, pp. 269-277, (1997). Ray, S.K., et al., "Flourine-enhanced nitridation of silicon at low temperatures in a microwave plasma", J. Appl. Phys., 70(3), pp. 1874-1876, (1991). Rossnagel, S.M., "Magnetron Sputter Deposition of Interconnect Applications", Conference Proceedings, ULSI XI, 227-232, (1996). Rossnagel, S.M., et al., "Metal ion deposition from ionized mangetron sputtering discharge", J. Vac. Sci. Technol. B, 12(1), pp. 449-453, (1994). Ryan, J.G., et al., "Copper Interconnects for Advanced Logic and DRAM", Extended Abstracts of the 1998 International Conference on Solid-State Devices and Materials, Hiroshima, pp. 258-259, (1998). Ryu, C., et al., "Barriers for copper interconnections", Solid State Technology, pp. 53,54,56, (Apr. 1999). Saarivirta, M.J., "High Conductivity Copper Rich Cu-Zr Alloys", Transactions of the Metallurgical Society of AIME, 218, p
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