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A probe card assembly includes a probe card, a space transformer having resilient contact structures (probe elements) mounted directly to (i.e., without the need for additional connecting wires or the like) and extending from terminals on a surface thereof, and an interposer disposed between the spa

A probe card assembly includes a probe card, a space transformer having resilient contact structures (probe elements) mounted directly to (i.e., without the need for additional connecting wires or the like) and extending from terminals on a surface thereof, and an interposer disposed between the space transformer and the probe card. The space transformer and interposer are "stacked up" so that the orientation of the space transformer, hence the orientation of the tips of the probe elements, can be adjusted without changing the orientation of the probe card. Suitable mechanisms for adjusting the orientation of the space transformer, and for determining what adjustments to make, are disclosed. The interposer has resilient contact structures extending from both the top and bottom surfaces thereof, and ensures that electrical connections are maintained between the space transformer and the probe card throughout the space transformer's range of adjustment, by virtue of the interposer's inherent compliance. Multiple die sites on a semiconductor wafer are readily probed using the disclosed techniques, and the probe elements can be arranged to optimize probing of an entire wafer. Composite interconnection elements having a relatively soft core overcoated by a relatively hard shell, as the resilient contact structures are described.

대표청구항 ▼

A probe card assembly includes a probe card, a space transformer having resilient contact structures (probe elements) mounted directly to (i.e., without the need for additional connecting wires or the like) and extending from terminals on a surface thereof, and an interposer disposed between the spa

A probe card assembly includes a probe card, a space transformer having resilient contact structures (probe elements) mounted directly to (i.e., without the need for additional connecting wires or the like) and extending from terminals on a surface thereof, and an interposer disposed between the space transformer and the probe card. The space transformer and interposer are "stacked up" so that the orientation of the space transformer, hence the orientation of the tips of the probe elements, can be adjusted without changing the orientation of the probe card. Suitable mechanisms for adjusting the orientation of the space transformer, and for determining what adjustments to make, are disclosed. The interposer has resilient contact structures extending from both the top and bottom surfaces thereof, and ensures that electrical connections are maintained between the space transformer and the probe card throughout the space transformer's range of adjustment, by virtue of the interposer's inherent compliance. Multiple die sites on a semiconductor wafer are readily probed using the disclosed techniques, and the probe elements can be arranged to optimize probing of an entire wafer. Composite interconnection elements having a relatively soft core overcoated by a relatively hard shell, as the resilient contact structures are described. ial diffraction grating is set in relation to a length of said resonant cavity. 6. The semiconductor device of claim 5, wherein said predetermined length of said partial diffraction grating is set to meet the inequality: Lgr≤1/2L, where Lgr is the predetermined length of the partial diffraction grating in μm, and L is the length of the resonant cavity in μm. 7. The semiconductor device of claim 6, wherein said predetermined length of said partial diffraction grating is approximately 1/2 L. 8. The semiconductor device of claim 1, wherein said predetermined length of said partial diffraction grating is set in relation to a coupling coefficient of said diffraction grating. 9. The semiconductor device of claim 8, wherein said predetermined length of said partial diffraction grating is set to meet the inequality: κi·Lgr≥2, where κi is the coupling coefficient of the partial diffraction grating, and Lgr is the length of the partial diffraction grating. 10. The semiconductor device of claim 9, wherein said predetermined length of said partial diffraction grating is set such that κi·Lgr is approximately equal to 2. 11. The semiconductor device of claim 8, wherein said partial diffraction grating has a thickness tgr, a distance from the active layer dsp, and a diffraction grating composition wavelength λgr, and at least one of the parameters tgr, dsp, and λgr is a predetermined value such that the coupling coefficient λi is set in relation to the grating length Lgr. 12. The semiconductor device of claim 1, wherein said partial diffraction grating comprises a plurality of grating elements having a predetermined pitch such that said oscillation wavelength spectrum has a center wavelength in the range of 1100 nm-1550 nm. 13. The semiconductor laser device of claim 12, wherein said pitch of said partial diffraction grating is configured such that said center wavelength is a shorter wavelength than a peak wavelength of the gain spectrum determined by said active layer. 14. The semiconductor laser device of claim 12, wherein said pitch of said partial diffraction grating is configured such that said center wavelength is a longer wavelength than a peak wavelength of the gain spectrum determined by said active layer. 15. The semiconductor device of claim 1, further comprising another partial diffraction grating positioned on the light emitting side of the laser device. 16. The semiconductor device of claim 15, wherein a reflectivity of each of said light reflecting and light emitting facets is no greater than 5%. 17. A method for providing light from a semiconductor device comprising radiating light from an active layer of said semiconductor device; providing a light reflecting facet positioned on a first side of said active layer; providing a light emitting facet positioned on a second side of said active layer thereby defining a resonator between said light reflecting facet and said light emitting facet; providing a partial diffraction grating having a predetermined length, and integrated within the semiconductor laser device and positioned on a light reflection side of said resonator; and selecting said predetermined length of said partial diffraction grating such that said semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. 18. The method of claim 17, wherein said step of providing a light reflecting facet comprises providing a light reflecting facet having a reflectivity of no more than 5%. 19. The method of claim 17, wherein said step of providing a light reflecting facet comprises providing a light reflecting facet having a reflectivity of no less than 80%. 20. The method of claim 17, wherein said step of providing a light emitting facet comprises providing a light emitting facet having a reflectivity of no more than 5%. 21. The method of claim 17, wherein said step