The invention relates to a multilayer tank or tubing made of a thermoplastic, comprising at least one layer comprising a barrier resin, adjacent to at least one layer consisting of a blend comprising at least one polyolefin and at least one functionalized polyolefin, and the said functionalized poly
The invention relates to a multilayer tank or tubing made of a thermoplastic, comprising at least one layer comprising a barrier resin, adjacent to at least one layer consisting of a blend comprising at least one polyolefin and at least one functionalized polyolefin, and the said functionalized polyolefin of which comprises functional monomeric units chosen from carboxylic acids, dicarboxylic acids and the anhydrides corresponding to the said dicarboxylic acids.
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The invention relates to a multilayer tank or tubing made of a thermoplastic, comprising at least one layer comprising a barrier resin, adjacent to at least one layer consisting of a blend comprising at least one polyolefin and at least one functionalized polyolefin, and the said functionalized poly
The invention relates to a multilayer tank or tubing made of a thermoplastic, comprising at least one layer comprising a barrier resin, adjacent to at least one layer consisting of a blend comprising at least one polyolefin and at least one functionalized polyolefin, and the said functionalized polyolefin of which comprises functional monomeric units chosen from carboxylic acids, dicarboxylic acids and the anhydrides corresponding to the said dicarboxylic acids. um Titanate Artificial Superlattice by Atomic Layer Epitaxy," Jpn. J. Appl. Phys. Vol. 33, p. 5192, (1994). Usui, A. et al., "Atomic Layer Epitaxy of III-V Compounds of Hydride VPE," Int. Symp. GaAs and related compounds, Las Vegas, NV, 1986, Int. Phys. conf. Ser. No. 83: Chapter 3, p. 129. Usui, A., et al., "GaAs Atomic Layer Epitaxy by Hydride VPE," Jpan. J. Appl. Phys., Vol. 25, P. L212, (1986). Utriainen, M. et al., "Controlled Electrical Conductivity in SnO2Thin Films by Oxygen or Hydrocarbon Assisted Atomic Layer Epitaxy," Electrochem. Soc., Vol. 146, p. 189, (1999). Watanabe, A. et al., "The Mechanism of Atomic Layer Epitaxy of GaAs Using Trimethylgallium and Arsine," Vacuum, Vol. 41, p. 965, (1990). Wisotski, E. et al., "Room-temperature Growth of ZrO2Thin Films using a novel hyperthermal oxygen-atom source," J. Vac. Sci., Technol. A17, p. 14, (1999). Yamada, A. et al., "Atomic Layer Deposition of ZnO Transparent Conducting Oxides," Appl. Surf. Sci., Vol. 112, p. 216, (1997). Yamaga, S. et al., "Atomic Layer Epitaxy of ZnS by a New Gas Supplying System in Low-pressure Metalorganic Vapor Phase Epitaxy," J. Cryst. Growth, Vol. 117, p. 152, (1992). Yamamoto, S. et al., "Atomic Layer-by-layer Epitaxy of Oxide Superconductors by MOCVD," Appl. Surf. Sci., Vol. 112, p. 30, (1997). Yao, T. et
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