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Semiconductor device and a semiconductor integrated circuit 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/04
  • H01L-029/76
출원번호 US-0769374 (2001-01-26)
우선권정보 JP-0301174 (1993-11-05); JP-0301176 (1993-11-05)
발명자 / 주소
  • Zhang, Hongyong
  • Yamaguchi, Naoaki
  • Takemura, Yasuhiko
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson, Eric J.Robinson Intellectual Property Law Office, P.C.
인용정보 피인용 횟수 : 41  인용 특허 : 25

초록

The present invention relates to a semiconductor device and a semiconductor integrated circuit. The semiconductor device comprises a semiconductor layer comprising a channel region, a source and a drain regions and at least one lower impurity concentration region interposed between the channel regio

대표청구항

The present invention relates to a semiconductor device and a semiconductor integrated circuit. The semiconductor device comprises a semiconductor layer comprising a channel region, a source and a drain regions and at least one lower impurity concentration region interposed between the channel regio

이 특허에 인용된 특허 (25)

  1. Hsu Sheng T. (Lawrenceville NJ), Extended drain self-aligned silicon gate MOSFET.
  2. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Insulated gate field effect semiconductor devices.
  3. Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX), Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode.
  4. Uesugi Yuji (Osaka JPX) Makino Masashi (Toyonaka JPX) Nishikawa Yukio (Kobe JPX) Oshima Kunio (Matsue JPX) Shinohara Akihito (Matsue JPX), Laser processing method.
  5. Yoshimi Makoto (Tokyo JPX) Takahashi Minoru (Yokohama JPX), Manufacturing method of semiconductor devices.
  6. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Kusumoto Naoto,JPX ; Takemura Yasuhiko,JPX, Method for crystallizing semiconductor material without exposing it to air.
  7. Zhang Hongyong (Kanagawa JPX) Ohnuma Hideto (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method for fabricating thin film transistor using anodic oxidation.
  8. Codama Mitsufumi (Kanagawa JPX), Method for forming a MOS transistor and structure thereof.
  9. Yamazaki Shunpei (Tokyo JPX) Zhang Hongyong (Kanagawa JPX) Uochi Hideki (Kanagawa JPX) Adachi Hiroki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method for forming thin film transistor.
  10. Woo Been-Jon (Saratoga CA) Holler Mark A. (Palo Alto CA) Hkelek Ender (Santa Clara CA) Lee Sandra S. (Los Altos CA), Method of fabricating a MOSFET with graded source and drain regions.
  11. Konuma Toshimitsu (Kanagawa JPX) Hiroki Masaaki (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method of fabricating thin film semiconductor integrated circuit.
  12. Havemann Robert H. (Garland TX), Method of making MOS VLSI semiconductor device with metal gate.
  13. Yamazaki Shunpei (Tokyo JPX), Method of making a thin film transistor with laser recrystallized source and drain.
  14. Zhang Hongyong (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method of manufacturing a semiconductor device.
  15. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Method of manufacturing an insulated gate field effect semiconductor device having an offset region and/or lightly doped.
  16. Zhang Hongyong,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device.
  17. Yamaguchi Yasuo (Hyogo JPX) Ajika Natsuo (Hyogo JPX) Yamano Tsuyoshi (Hyogo JPX), Semiconductor device and a method of manufacturing thereof.
  18. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for fabricating the same.
  19. Yamazaki Shunpei (Tokyo JPX) Zhang Hongyong (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Semiconductor device and method for forming the same.
  20. Konuma Toshimitsu,JPX ; Sugawara Akira,JPX ; Uehara Yukiko,JPX ; Zhang Hongyong,JPX ; Suzuki Atsunori,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Suzawa Hideomi,JPX ; Uochi Hideki,JPX ; Takemura, Semiconductor device and method for manufacturing the same.
  21. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor device free from reverse leakage and throw leakage.
  22. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Kusumoto Naoto,JPX ; Takemura Yasuhiko,JPX, Semiconductor material and method for forming the same and thin film transistor.
  23. Takemura Yasuhiko (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Konuma Toshimitsu (Kanagawa JPX), Thin film semiconductor device with gate metal oxide and sidewall spacer.
  24. Yamazaki Shunpei (Tokyo JPX) Zhang Hongyong (Kanagawa JPX) Kusumoto Naoto (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Thin film transistor and semiconductor device including a laser crystallized semiconductor.
  25. Shih Chu-Jung,TWX ; Lu I-Min,TWX, Window shutter for laser annealing.

이 특허를 인용한 특허 (41)

  1. Yamazaki, Shunpei; Koyama, Jun, Field sequential liquid crystal display device and driving method thereof, and head mounted display.
  2. Yamazaki, Shunpei; Koyama, Jun, Field sequential liquid crystal display device and driving method thereof, and head mounted display.
  3. Yamazaki,Shunpei; Koyama,Jun, Field sequential liquid crystal display device and driving method thereof, and head mounted display.
  4. Yamazaki, Shunpei; Takayama, Toru; Maruyama, Junya; Goto, Yuugo; Ohno, Yumiko; Endo, Akio; Arai, Yasuyuki, Liquid crystal display device and manufacturing method of liquid crystal display device.
  5. Yamazaki, Shunpei; Takayama, Toru; Maruyama, Junya; Goto, Yuugo; Ohno, Yumiko; Endo, Akio; Arai, Yasuyuki, Liquid crystal display device and manufacturing method of liquid crystal display device.
  6. Yamazaki, Shunpei; Takayama, Toru; Maruyama, Junya; Goto, Yuugo; Ohno, Yumiko; Endo, Akio; Arai, Yasuyuki, Liquid crystal display device and manufacturing method of liquid crystal display device.
  7. Uehara,Takuya, Liquid crystal display having gate driver IC chip COG-mounted on glass substrate.
  8. Tokunaga, Hajime, Manufacturing method of semiconductor device.
  9. Tokunaga, Hajime, Manufacturing method of semiconductor device.
  10. Tokunaga, Hajime, Manufacturing method of semiconductor device.
  11. Tokunaga, Hajime, Manufacturing method of semiconductor device.
  12. Moriwaka, Tomoaki, Method for manufacturing semiconductor device.
  13. Moriwaka, Tomoaki, Method for manufacturing semiconductor device.
  14. Yamaguchi, Mayumi; Isobe, Atsuo; Saito, Satoru, Method for manufacturing semiconductor device including hat-shaped electrode.
  15. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  16. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  17. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  18. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  19. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  20. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  21. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  22. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  23. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  24. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  25. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  26. Yamazaki, Shunpei, Method of manufacturing a semiconductor device having a gate electrode formed over a silicon oxide insulating layer.
  27. Yamazaki, Shunpei, Method of manufacturing a semiconductor device including thermal oxidation to form an insulating film.
  28. Yamazaki, Shunpei, Method of manufacturing semiconductor device having island-like single crystal semiconductor layer.
  29. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Nonvolatile memory and electronic apparatus.
  30. Hewson, Melissa M.; Jackson, Ricky A.; Singh, Abha; Tran, Toan; Tigelaar, Howard L., Optimized metal fuse process.
  31. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  32. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer.
  33. Chang,Shih Chang; Deng,De Hua; Fang,Chun Hsiang; Tsai,Yaw Ming; Tseng,Chang Ho, Self-aligned LDD thin-film transistor and method of fabricating the same.
  34. Yamazaki, Shunpei, Semiconductor device.
  35. Maruyama, Hotaka; Akimoto, Kengo, Semiconductor device and manufacturing method thereof.
  36. Okamoto, Satoru; Sekiguchi, Keiichi, Semiconductor device and method of manufacturing the same.
  37. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Semiconductor device having buried oxide film.
  38. Kimura, Hajime, Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer.
  39. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  40. Yamaguchi,Tetsuji; Isobe,Atsuo; Saito,Satoru, Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device.
  41. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
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