초록 ▼

A process of forming a solder bump on a semiconductor device including vibrating a solder reservoir carrier in a vertical direction while pressure and heat are applied to the solder reservoir. An engagement surface of the solder reservoir is contacted with an engagement surface of the semiconductor

A process of forming a solder bump on a semiconductor device including vibrating a solder reservoir carrier in a vertical direction while pressure and heat are applied to the solder reservoir. An engagement surface of the solder reservoir is contacted with an engagement surface of the semiconductor device and the semiconductor device is vibrated in a horizontal direction to reflow a portion of the solder reservoir on the engagement surface. The solder reservoir carrier and the semiconductor device are moved away from each other so that additional solder is deposited and a solder column is grown on the semiconductor device. The solder column is cut off from the solder reservoir by vibrating the solder reservoir carrier in a horizontal direction to form a solder bump on the semiconductor device.

대표청구항 ▼

A process of forming a solder bump on a semiconductor device including vibrating a solder reservoir carrier in a vertical direction while pressure and heat are applied to the solder reservoir. An engagement surface of the solder reservoir is contacted with an engagement surface of the semiconductor

A process of forming a solder bump on a semiconductor device including vibrating a solder reservoir carrier in a vertical direction while pressure and heat are applied to the solder reservoir. An engagement surface of the solder reservoir is contacted with an engagement surface of the semiconductor device and the semiconductor device is vibrated in a horizontal direction to reflow a portion of the solder reservoir on the engagement surface. The solder reservoir carrier and the semiconductor device are moved away from each other so that additional solder is deposited and a solder column is grown on the semiconductor device. The solder column is cut off from the solder reservoir by vibrating the solder reservoir carrier in a horizontal direction to form a solder bump on the semiconductor device. and an inorganic species, the inorganic species defining an ordered array of nucleation sites; heating the template layer to expose the ordered array of nucleation sites; and using vapor phase deposition to form a continuous single crystal semiconductor film on the non-crystalline surface from the ordered array of nucleation sites the film bridging multiple nucleation sites. 14. The method of claim 13, wherein the template layer is deposited on the non-crystalline surface by a Langmuir-Blodgett deposition process. 15. The method of claim 13, wherein the template layer is deposited on the non-crystalline surface by an evaporation-based deposition process. e gasses. 11. The method of claim 1, wherein said passivation barrier layer is removed by etching using wet chemical etching, reactive ion etching or plasma etching. 12. The method of claim 1, wherein said passivation barrier layer is removed by wet chemical hydrofluoric acid (HF) etching. 13. The method of claim 1, wherein high electron mobility transistors (HEMTs), metal-semiconductor field effect transistors (MESFETs), laser diodes (LDs), light emitting diodes (LEDs), optical detectors, and bipolar junction transistors (BJTs) or similar semiconductor devices are formed in said semiconductor material.