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An electronic device containing a polythiophene of Formula (I) wherein R and R' are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z is 0 or 1, and wherein the sum of x and y is greater than about zero; m represents the number of segments; and

An electronic device containing a polythiophene of Formula (I) wherein R and R' are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z is 0 or 1, and wherein the sum of x and y is greater than about zero; m represents the number of segments; and n represents the degree of polymerization.

대표청구항 ▼

An electronic device containing a polythiophene of Formula (I) wherein R and R' are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z is 0 or 1, and wherein the sum of x and y is greater than about zero; m represents the number of segments; and

An electronic device containing a polythiophene of Formula (I) wherein R and R' are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z is 0 or 1, and wherein the sum of x and y is greater than about zero; m represents the number of segments; and n represents the degree of polymerization. cording to claim 1 wherein said at least one electrode comprises a plurality of said anode pixel electrodes. 3. A method for determining the time at which a photon is incident on a pixelated detector, the pixelated detector comprising a semiconductor crystal having a cathode electrode and an anode having a plurality of anode pixel electrodes, wherein said photon produces mobile electrons and holes in material of said crystal by ionization, the method comprising: applying a potential difference between said cathode and said anode so that said holes drift to said cathode and said electrons drift to said anode; producing a signal, induced by said drifting electrons and holes, on all said anode pixels, determining a time at which said electrons and holes are generated based on said signal. 4. A method for determining the time at which a photon is incident on a pixelated detector, the pixelated detector comprising a semiconductor crystal having a cathode electrode and an anode having a plurality of anode pixel electrodes, wherein said photon produces mobile electrons and holes in material of said crystal by ionization, the method comprising: applying a potential difference between said cathode and, said anode so that said boles drift to said cathode and said electrons drift to said anode; producing a signal, induced by said drifting electrons and holes, on said cathode, determining a time at which said electrons and holes are generated based on said signal. 5. A pixelated detector for detecting photons incident on said pixelated detector comprising: a semiconductor crystal; a cathode electrode on a first surface of said crystal; an anode comprising a plurality of anode pixel electrodes on a second surface of said crystal, wherein an incident photon produces mobile electrons and holes in said crystal that induce signals on electrodes of said electrodes; and a signal generator that receives signals from at least one electrode of said electrodes and generates, prior to a determination of a location of an interaction between said photon and said crystal, a timing signal responsive to induced signals on said at least one electrode and wherein said at least one electrode has a size larger than the size of a single anode pixel electrode. 6. A pixelated detector according to claim 5 wherein said at least one electrode comprises at least two of said anode pixel electrodes. 7. A pixelated detector according to claim 6 wherein said at least two of said anode pixel electrode comprises all of said pixel electrodes. 8. A pixelated detector according to claim 5 wherein said at least one electrode is said cathode electrode. 9. A multilayer pixelated detector comprising a plurality of pixelated detectors in accordance with claim 5 that are stacked such that a line passing through substantially the center of an anode pixel of any of said pixelated detectors, perpendicular to the plane of the anode pixel, passes substantially through the center of an anode pixel of each of the other pixelated detectors in said plurality of pixelated detectors. 10. A multilayer pixelated detector according to claim 9 wherein at least two adjacent pixelated detectors of said stack are displaced from each other. 11. A multilayer pixelated detector according to claim 9 wherein at least two .pixelated detectors of said stacked pixelated detectors are contiguous. 12. A gamma camera comprising a plurality of pixelated detectors according to claim 5. 13. A pixelated detector according to claim 5 and comprising a signal processor that receives said timing signal and determines a time indicative of the time that said photon is incident on said pixelated detector. 14. A pixelated detector for detecting photons incident thereon, comprising: a semiconductor crystal; a cathode electrode on a first surface of said crystal; an anode comprising a plurality of anode pixels on a second surface of said crystal wherein each anode pixel comprises a collecting a