초록

A bus driver signaling device wherein a user is able to push a button to activate a light source signal at a bus stop. Pushing the button creates a light signal able to be viewed by the bus driver, thereby signaling the bus driver that a passenger is awaiting the bus driver at the bus stop.

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A bus driver signaling device wherein a user is able to push a button to activate a light source signal at a bus stop. Pushing the button creates a light signal able to be viewed by the bus driver, thereby signaling the bus driver that a passenger is awaiting the bus driver at the bus stop. ion (PVD

A bus driver signaling device wherein a user is able to push a button to activate a light source signal at a bus stop. Pushing the button creates a light signal able to be viewed by the bus driver, thereby signaling the bus driver that a passenger is awaiting the bus driver at the bus stop. ion (PVD), and plasma enhanced chemical vapor deposition (PECVD), the at least one contaminant being selected from a group consisting essentially of carbon (C), sulphur (S), and oxygen (O), and the Cu--Ca alloy surface being Cu-rich with a Ca-doping level in a range of 0.2 atomic % to 5 atomic %. 3. A semiconductor device, having a contaminant-reduced copper-calcium alloy surface on a copper (Cu--Ca/Cu) interconnect structure, comprising: a semiconductor substrate; a Cu film deposited on the semiconductor substrate; and a Cu--Ca alloy surface deposited on the Cu film, the Cu film comprising a electroless plating treatment, said electroless plating treatment comprising an electroless plating solution for facilitating doping of the Cu film with at least one plurality of ions selected from a group consisting essentially of Cu ions and Ca ions, whereby a Cu--Ca--X film is formed on the Cu film, wherein X denotes at least one contaminant, the Cu--Ca--X film comprising a removing technique selected from a group consisting essentially of: sputtering under an Ar atmosphere, and treating in a plasma ambient for initially removing the at least one contaminant, and whereby a thin Cu--Ca film is effected on the Cu film, the thin Cu--Ca film comprising an annealing treatment for finally removing the at least one contaminant, the thin Cu--Ca film being alloyed, whereby a contaminant-reduced Cu--Ca alloy surface is formed onto the Cu film, and whereby the contaminant-reduced Cu--Ca/Cu interconnect structure, comprising the contaminant-reduced Cu--Ca alloy surface, is formed on the semiconductor device. 4. A device, as recited in claim 3, wherein the Cu film comprises a depositing technique selected from a group consisting essentially of electroplating, electroless plating, chemical vapor deposition (CVD), plasma vapor deposition (PVD), and plasma enhanced chemical vapor deposition (PECVD). 5. A device, as recited in claim 4, wherein the Cu--Ca alloy surface is Cu-rich with a Ca-doping level in a range of 0.2 atomic % to 5 atomic %. 6. A device, as recited in claim 3, wherein the electroless plating solution comprises: a. at least one solvent; b. at least one Cu salt; c. at least one Ca salt; d. at least one complexing agent; and e. at least one reducing agent, (b) through (e) being dissolved in (a). 7. A device, as recited in claim 6, wherein the Cu--Ca alloy surface is Cu-rich with a Ca-doping level in a range of 0.2 atomic % to 5 atomic %. 8. A device, as recited in claim 6, wherein the electroless plating solution further comprises: f. at least one pH adjuster; and g. at least one surfactant, (f) and (g) being dissolved in (a). 9. A device, as recited in claim 8, wherein the Cu--Ca alloy surface is Cu-rich with a Ca-doping level in a range of 0.2 atomic % to 5 atomic %. 10. A device, as recited in claim 3, wherein the at least one contaminant is selected from a group consisting essentially of carbon (C), sulphur (S), and oxygen (O). 11. A device, as recited in claim 3, wherein the Cu--Ca alloy surface is Cu-rich with a Ca-doping level in a range of 0.2 atomic % to 5 atomic %. 12. A semiconductor device having a contaminant-reduced copper-calcium alloy surface on a copper (Cu--Ca/Cu) interconnect structure, as recited in claim 3, wherein the Cu film a depositing technique selected from a group consisting essentially of electroplating, electroless plating, chemical vapor deposition (CVD), plasma vapor deposition (PVD), and plasma enhanced chemical vapor deposition (PECVD), wherein the Cu film comprising an electroless plating treatment, said electroless plating treatment comprising an electroless plating solution for facilitating doping of the Cu film with at least one plurality of ions selected from a group consisting essentially of Cu ions and Ca ions, the solution comprising: a. at least one solvent; b. at least one Cu salt; c. at least one Ca salt; d. at least one complexing agent; e. at least one