초록 ▼

By a simple apparatus construction and process, it is made possible to "clean precisely" a surface at the molecular/atomic level, and the purification degree of the surface processed minutely is made into 1012molecules/cm2or less. A steam-spraying nozzle is disposed such that a line slit nozzle is i

By a simple apparatus construction and process, it is made possible to "clean precisely" a surface at the molecular/atomic level, and the purification degree of the surface processed minutely is made into 1012molecules/cm2or less. A steam-spraying nozzle is disposed such that a line slit nozzle is in a diameter direction, and mist-containing steam is sprayed onto the surface of a substrate. Thereby, particles in the steam-spraying surface (the particles were made to adhere by dipping the substrate in a solution containing polystyrene (particle diameter of 0.6 μm) or alumina (particle diameter of 0.3 μm to 0.5 μm) particles at 105particles/ml.) are removed by about 90% to 95% after ten-seconds spraying, and by 99% or more, that is, to less than the detection limit of a wafer inspection device, after twenty-seconds spraying.

대표청구항 ▼

1. A one-by-one surface purification apparatus used in a manufacturing process of semiconductor devices or liquid crystal display devices, wherein substrates to be purified are set one-by-one, said apparatus comprising: means for generating saturated steam; means for generating superheated steam

1. A one-by-one surface purification apparatus used in a manufacturing process of semiconductor devices or liquid crystal display devices, wherein substrates to be purified are set one-by-one, said apparatus comprising: means for generating saturated steam; means for generating superheated steam; means for bringing at least one of said saturated steam and said superheated steam into contact with a surface of each of said substrates; means for spraying at least one of said saturated steam and said superheated steam onto said surface; and means for irradiating with ultraviolet rays, wherein said surface is processed in combination with processing of irradiating said surface with ultraviolet rays in said steam processing, and wherein at least one of saturated steam and superheated steam is selectively used to purify said surface. 2. A surface purification apparatus described in claim 1, wherein said irradiation means uses an ultraviolet lamp of a wavelength corresponding to a 50% transmissive distance of not less than 10 mm to steam. 3. A one-by-one surface purification apparatus used in a manufacturing process of semiconductor devices or liquid crystal display devices, wherein substrates to be purified are set one-by-one, said apparatus comprising: means for generating saturated steam; means for generating superheated steam; means for bringing at least one of said saturated steam and said superheated steam into contact with a surface of each of said substrates; means for spraying at least one of said saturated steam and said superheated steam onto said surface; and an ultraviolet reactor, said reactor comprising an ultraviolet lamp of a wavelength corresponding to a 50% transmissive distance of not less than 10 mm to steam, said ultraviolet lamp being disposed in parallel with said surface having need of purification, wherein said surface in steam processing is irradiated and processed with said ultraviolet lamp, wherein at least one of saturated steam and superheated steam is selectively used to purify said surface. 4. A one-by-one surface purification method used in a manufacturing process of semiconductor devices or liquid crystal display devices, wherein substrates to be purified are set one by one, said method comprising the steps of: generating saturated steam; generating superheated steam; bringing at least one of said saturated steam and said superheated steam into contact with a surface of each of said substrates; and spraying at least one of said saturated steam and said superheated steam onto said surface, wherein said surface is processed in combination with processing of irradiating said surface with ultraviolet rays of a wavelength corresponding to a 50% transmissive distance of not less than 10 mm to steam, in said steam processing; and wherein at least one of said saturated steam and superheated steam is used as said steam to purify said surface. 5. A surface purification method described in claim 4, wherein organic matters having adhered to said surface are removed by said steam processing and said process of irradiating with ultraviolet rays. 6. A surface purification method described in claim 4, wherein an organic matter film is formed on said surface and is removed by said steam processing and said process of irradiating with ultraviolet rays. 7. A surface purification method described in claim 4, wherein particles having adhered to said surface are removed by said steam processing and said process of irradiating with ultraviolet rays.