IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0906585
(2001-07-16)
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발명자
/ 주소 |
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대리인 / 주소 |
Thorpe, North & Western, LLP
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인용정보 |
피인용 횟수 :
0 인용 특허 :
7 |
초록
The present invention provides a method for making a superabrasive composite material having the general formula SixCyNz,and tools containing such a material. In one aspect, vapor forms of Si, C, and N elements are deposited onto a molten metal catalyst and solid SixCyNzis precipitated therefrom.
대표청구항
▼
1. A method of making a superabrasive composite material having the general formula SixCyNz,comprising the steps of: a) depositing a particulate form of Si and a metal containing catalyst on a substrate; b) heating the substrate to a temperature sufficient to melt the metal containing catalyst;
1. A method of making a superabrasive composite material having the general formula SixCyNz,comprising the steps of: a) depositing a particulate form of Si and a metal containing catalyst on a substrate; b) heating the substrate to a temperature sufficient to melt the metal containing catalyst; and c) depositing C, and N elements in a vapor form onto the molten metal containing catalyst in an amount sufficient to bond with the Si and produce a composite SixCyNzmaterial in the form of grits. 2. The method of claim 1, wherein the substrate contains an element selected from the group consisting of: Si, C, N, W, Ta, Ti, as well as compounds, alloys, and mixtures thereof. 3. The method of claim 2, wherein the substrate is Si (111). 4. The method of claim 2, wherein the substrate contains C. 5. The method of claim 2, wherein the substrate contains W. 6. The method of claim 1, wherein the substrate is a metal. 7. The method of claim 6, wherein the metal is an alloy of nickel, cobalt, and iron. 8. The method of claim 6, wherein the substrate is a tool body. 9. The method of claim 8, wherein the tool body is a cutting tool body. 10. The method of claim 1, wherein the metal containing catalyst includes a metal salt. 11. The method of claim 10, wherein the metal salt includes a halide. 12. The method of claim 11, wherein the halide is a member selected from the group consisting of: fluorine, chlorine, bromine, iodine, astatine, ions thereof, and mixtures thereof. 13. The method of claim 12, wherein the halide is chlorine or an ion thereof. 14. The method of claim 1, wherein the metal containing catalyst consists of a metal or an alloy thereof. 15. The method of claim 14, wherein the metal is a member selected from the group consisting of: gold, silver, platinum, copper, nickel, iron, cobalt, chromium, manganese, zinc, alloys thereof, and mixtures thereof. 16. The method of claim 15, wherein the metal catalyst is gold. 17. The method of claim 15, wherein the metal catalyst is silver. 18. The method of claim 15, wherein the metal catalyst is copper. 19. The method of claim 1, wherein the metal containing catalyst is fixed to the substrate. 20. The method of claim 1, wherein the Si, C, and N elements are each presented as compounds which contain no more than single bonding arrangements. 21. The method of claim 20, wherein at least one of the Si, C, and N compounds is either a hydride or a halide. 22. The method of claim 21, wherein the C compound is CH4. 23. The method of claim 21, wherein the C compound is CCl4. 24. The method of claim 21, wherein the N compound is NH3. 25. The method of claim 21, wherein the N compound is NCl3. 26. The method of claim 1, wherein the substrate temperature is from about 500° C. to about 1500° C. 27. The method of claim 26, wherein the substrate temperature is from 800° C. to about 1000° C. 28. The method of claim 27, wherein the substrate temperature is about 900° C. 29. The method of claim 1, wherein X is less than or equal to Y and Z is greater than X or Y. 30. The method of claim 29, wherein X is less than Y. 31. The method of claim 30, wherein the X is less than half of Y. 32. The method of claim 1, wherein Z is greater than X+Y. 33. The method of claim 1, wherein the compound has a formula of (Si, C)3N4. 34. The method of claim 1, wherein the composite material is a crystal having only single bond. 35. The method of claim 1, wherein the grits have a size greater than about 40 micrometers. 36. The method of claim 1, wherein the Si particles have a predetermined size which substantially corresponds to a desired size for the grits. 37. The method of claim 36, wherein the desired size for the grits is about 40 micrometers.
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