초록 ▼

The present invention relates to a process for the preparation of a hydroprocessing catalyst, to the catalyst composition obtainable by said process, and to the use of said catalyst composition in hydroprocessing applications. The process comprises the steps of combining and reacting at least one Gr

The present invention relates to a process for the preparation of a hydroprocessing catalyst, to the catalyst composition obtainable by said process, and to the use of said catalyst composition in hydroprocessing applications. The process comprises the steps of combining and reacting at least one Group VIII non-noble metal component in solution and at least two Group VIB metal components in solution in a reaction mixture to obtain an oxygen-stable precipitate, and sulfiding the precipitate.

대표청구항 ▼

The present invention relates to a process for the preparation of a hydroprocessing catalyst, to the catalyst composition obtainable by said process, and to the use of said catalyst composition in hydroprocessing applications. The process comprises the steps of combining and reacting at least one Gr

The present invention relates to a process for the preparation of a hydroprocessing catalyst, to the catalyst composition obtainable by said process, and to the use of said catalyst composition in hydroprocessing applications. The process comprises the steps of combining and reacting at least one Group VIII non-noble metal component in solution and at least two Group VIB metal components in solution in a reaction mixture to obtain an oxygen-stable precipitate, and sulfiding the precipitate. ol. 510, Materials Research Society. Foll, et al., "The Formation of Swirl Defects in Silicon by Agglomeration of Self-Interstitials", Journal of Crystal Growth, (1977), pp. 90-108, vol. 40, North-Holland Publishing Company. Hara, A., et al., "Enhancement of Oxygen Precipitation in Quenched Czochralski Silicon Crystals", J. Appl. Phys., (1989), pp. 3958-3960, vol. 66, No. 8, American Institute of Physics. Hawkins, G.A., et al., "Effect of Rapid Thermal Processing on Oxygen Precipitation in Silicon", Mat. Res. Soc. Symp. Proc., (1988), pp. 197-200, vol. 104, Materials Research Society. Hawkins, G.A., et al., "The Effect of Rapid Thermal Annealing on the Precipitation of Oxygen in Silicon", J. Appl. Phys., (1989), pp. 3644-3654, vol. 65, No. 9, American Institute of Physics. Jacob, M., et al., "Determination of Vacancy Concentrations in the Bulk of Silicon Wafers by Platinum Diffusion Experiments", (1997), pp. 182-191, vol. 82, No. 1, American Institute of Physics. Jacob, M., et al., "Influence of RTP on Vacancy Concentrations", (1998), pp. 129-133, vol. 490, Materials Research Society. Kissinger, G., et al., "A Method for Studying the Growth-In Defect Density Spectra in Czochralski Silicon Wafers", J. Electrochem. Soc., pp. 1447-1456, (1997), vol. 144, No. 4, Published by The Electrochemical Society, Inc. Mule'Stagno, L., et al., "Gettering of Copper in Bonded Silicon Wafers", Electrochemical Society Proceedings, pp. 176-182, vol. 96, No. 3. Nadahara, S., et al., "Hydrogen Annealed Silicon Wafer", Solid State Phenomena, (1997), pp. 19-26, Scitec Publications, Switzerland Pagani, M., et al., "Spatial Variations in Oxygen Precipitation in Silicon After High Temperature Rapid Thermal Annealing", Appl. Phys. Lett., (1997), pp. 1572-1574, vol