IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0302157
(2002-11-22)
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발명자
/ 주소 |
- Riess, Edward A.
- Malofsky, Adam G.
- Barber, John P.
- Claypoole, Gary L.
- Cravens, II, Robert Carl
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
13 인용 특허 :
123 |
초록
▼
An apparatus and system for using magnetic fields to heat magnetically susceptible materials within and/or adjacent to adhesives, resins, or composites so as to reversibly or irreversibly bond, bind, or fasten opaque or non-opaque solid materials to one another. The system makes use of the effect th
An apparatus and system for using magnetic fields to heat magnetically susceptible materials within and/or adjacent to adhesives, resins, or composites so as to reversibly or irreversibly bond, bind, or fasten opaque or non-opaque solid materials to one another. The system makes use of the effect that alternating magnetic fields induce eddy currents and generate heat within susceptors, and the effect that alternating magnetic fields additionally induce magnetic hysteresis that occurs in magnetic materials and thereby generate heat. An induction heating tool is used to emit the magnetic field at its work coil, and an electronic controller measures the energy being used by a power converter that generates the alternating current driving the work coil which creates the magnetic field. The distance between the susceptor and work coil is repeatedly analyzed based upon the power converter's input energy, and the work coil is driven at a repeatedly corrected power level during the heating cycle. Once a sufficient accumulated energy has been delivered to the susceptor, the magnetic field is turned off automatically by the tool, thus preventing overheating of the susceptor.
대표청구항
▼
An apparatus and system for using magnetic fields to heat magnetically susceptible materials within and/or adjacent to adhesives, resins, or composites so as to reversibly or irreversibly bond, bind, or fasten opaque or non-opaque solid materials to one another. The system makes use of the effect th
An apparatus and system for using magnetic fields to heat magnetically susceptible materials within and/or adjacent to adhesives, resins, or composites so as to reversibly or irreversibly bond, bind, or fasten opaque or non-opaque solid materials to one another. The system makes use of the effect that alternating magnetic fields induce eddy currents and generate heat within susceptors, and the effect that alternating magnetic fields additionally induce magnetic hysteresis that occurs in magnetic materials and thereby generate heat. An induction heating tool is used to emit the magnetic field at its work coil, and an electronic controller measures the energy being used by a power converter that generates the alternating current driving the work coil which creates the magnetic field. The distance between the susceptor and work coil is repeatedly analyzed based upon the power converter's input energy, and the work coil is driven at a repeatedly corrected power level during the heating cycle. Once a sufficient accumulated energy has been delivered to the susceptor, the magnetic field is turned off automatically by the tool, thus preventing overheating of the susceptor. ric fluid supplying unit which supplies a pressurized dielectric fluid in the gap; a gas supplying unit which supplies a pressurized gas in the gap; and a switching unit which supplies a pressurized fluid into a nozzle and for switching the pressurized fluid to a dielectric fluid or a gas, wherein the switching unit is provided so as to constitute the dielectric fluid supplying unit in the gas supplying unit. 4. The wire electric discharge machining apparatus according to claim 3, wherein the gas is at least one kind selected from the group consisting of oxygen, nitrogen, hydrogen, an inert gas and an insulating gas. onding plurality of predetermined non-round energy distributions. 18. The method of claim 17 wherein each non-round spot has an orientation and each microstructure has an orientation and wherein the step of positioning includes aligning the orientations of the non-round spots to corresponding orientations of the microstructures. 19. The method of claim 18 wherein the orientations of the plurality of processed microstructures are orthogonal orientations. 20. The method of claim 18 wherein the step of aligning is controlled automatically based on predetermined microstructure orientations. 21. The method of claim 20 wherein the predetermined microstructure orientations are contained in a wafer repair file. 22. The method of claim 17 wherein the processed microstructures are metal links of a multi-material, redundant memory device. 23. The method of claim 1 wherein the step of positioning includes the step of aligning an axis of the at least one non-round spot with the at least one microstructure. 24. The method of claim 23 wherein the step of aligning is performed automatically and wherein the step of aligning includes switching the laser beam to one of a plurality of optical paths. 25. The method of claim 24 wherein the laser beam is polarized and wherein the step of switching includes controllably modifying the polarization of the laser beam. 26. The method of claim 24 wherein the step of switching includes controllably modifying the laser beam with an anamorphic optical system. 27. The method of claim 23 wherein the step of aligning includes at least semi-automatically adjusting a major axis of the at least one non-round spot. 28. The method of claim 23 wherein the step of aligning includes providing computer generated signals to automatically adjust a major axis of the at least one non-round spot. 29. The method of claim 28 wherein the step of aligning further includes automatically moving an optical subsystem in response to orientation control signals. 30. The method of claim 29 wherein the step of moving the optical subsystem includes moving an anamorphic optical component of the subsystem. 31. The method of claim 1 wherein the microstructures contained in the device are regularly arranged in rows and columns. 32. The method of claim 1 wherein the predetermined non-round energy distribution is based on a model of radiation-material interaction correlating a cross section of the designated region with shape of the at least one non-round spot. 33. The method of claim 32 wherein the model is a thermal model. 34. The method of claim 32 wherein the model is a multi-parameter model. 35. The method of claim 1 wherein the step of positioning includes the step of positioning the at least one non-round spot with a low inertia beam deflector. 36. The method of claim 1 wherein the step of positioning includes the step of positioning the at least one non-round spot with a movable translation stage. 37. The method of claim 1 wherein the step of modifying includes the step of controllably modifying an aspect ratio of the laser beam with an anamorphic optical element. 38. The method of claim 37 wherein the step of controllably modifying includes generating a control signal and adjusting an anamorphic optical system to adjust the aspect ratio in response to the control signal. 39. The method of claim 1 wherein the at least one non-round spot has a minor diameter and wherein the non-round energy distribution increases peak fluence at the designated region more slowly compared to peak fluence of a decreasing round spot with a similar minor diameter. 40. The method of claim 1 wherein the at least one non-round spot has a minor diameter and wherein positioning sensitivity of the at least one non-round spot is less than positioning sensitivity of a round spot with a similar minor diameter. 41. The method of claim 1 wherein peak fluence at the designated region is reduced but energy coupled into the designated region is not reduced. 42. The metho d of claim 1 wherein the target material in the designated region is cleanly removed. 43. The method of claim 1 wherein the target material in the designated region is removed without undesirable material change to adjacent microstructures of the device. 44. The method of claim 1 wherein the target material in the designated region is removed without undesirable material change to underlying layers of the device. 45. The method of claim 1 wherein the target material in the designated region is removed without undesirable material change to a substrate of the device. 46. The method of claim 1 wherein the non-round energy distribution has an edge profile parallel to an edge of the at least one microstructure. 47. The method of claim 43 further comprising the step of increasing maximum energy of the at least one non-round spot. 48. The method of claim 44 further comprising the step of increasing maximum energy of the at least one non-round spot. 49. The method of claim 45 further comprising the step of increasing maximum energy of the at least one non-round spot. 50. The method of claim 42 further comprising the step of decreasing minimum energy of the at least one non-round spot. 51. A system for processing at least one microstructure which is part of a multi-material device containing a plurality of microstructures, the at least one microstructure having a designated region for target material removal, the system comprising: means for generating a laser beam; means for modifying the laser beam to obtain a modified laser beam; and means for sequentially and relatively positioning the modified laser beam into at least one non-round spot having a predetermined non-round energy distribution on the designated region to remove the target material in the designated region wherein the predetermined non-round energy distribution covers an area of the designated region such that energy is more efficiently coupled into the designated region for the non-round energy distribution than energy coupled into the designated region for a round energy distribution covering the same area. 52. The system of claim 51 wherein the predetermined non-round energy distribution includes pre-specified characteristics including an aspect ratio, a focused spot size, an orientation, depth of focus and a focused irradiance distribution. 53. The system of claim 51 wherein the at least one microstructure is a link structure having a length and the multi-material device is a semiconductor device, and wherein the designated region is located between but does not include electric contacts for the link structure. 54. The system of claim 51 wherein the predetermined non-round energy distribution is based on a model of radiation-material interaction correlating a cross section of the designated region with shape of the at least one non-round spot. 55. The system of claim 51 wherein the means for modifying includes an anamorphic optical element for controllably modifying an aspect ratio of the laser beam.
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