초록

Disclosed is a plant-derived flavonol-containing dry composition suitable for human consumption, wherein at least 25% of the plant-derived material in the composition comprises polyphenols, together with uses thereof.

대표청구항 ▼

Disclosed is a plant-derived flavonol-containing dry composition suitable for human consumption, wherein at least 25% of the plant-derived material in the composition comprises polyphenols, together with uses thereof. to form an electron-capturing layer; and forming a source/drain region in the sub

Disclosed is a plant-derived flavonol-containing dry composition suitable for human consumption, wherein at least 25% of the plant-derived material in the composition comprises polyphenols, together with uses thereof. to form an electron-capturing layer; and forming a source/drain region in the substrate and at outside of the spacer wall. 9. The method of fabricating a memory device according to claim 8, wherein the electron-capturing material layer includes a silicon nitride layer. 10. The method of fabricating a memory device according to claim 8, wherein the blanket dielectric layer includes silicon nitride, and the formed spacer wall is a silicon nitride spacer wall. 11. The method of fabricating a memory device according to claim 8, wherein the electro-capturing material layer not blocked by the spacer wall is simultaneously removed during the etch back step of the blanket dielectric layer, forming the electron-capturing layer. 12. The method of fabricating a memory device according to claim 8, wherein the dielectric layer is made of materials including silicon oxide. 13. The method of fabricating a memory device according to claim 8, wherein the conductive layer is made of materials including poly-silicon. 14. The method of fabricating a memory device according to claim 8, wherein the memory device further includes a metal-silicon compound material layer on top of the conductive gate layer. The method of claim 8, wherein the metal silicide layer comprises tungsten silicide. 13. The method of claim 8, further comprising forming a dielectric layer over the substrate covering the word-line after the grounding doped region is formed in the substrate. 14. The method of claim 13, wherein the dielectric layer comprises borophosphosilicate glass (BPSG).