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In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of th

In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

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In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of th

In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side. ing to claim 9, wherein the first mask is a hard mask. 11. The method according to claim 9, wherein the first mask is of silicon nitride. 12. The method according to claim 9, which further comprises filling with an intermediate insulating region. 13. The method according to claim 12, which further comprises carrying out the filling step with an oxide. 14. The method according to claim 12, wherein the first mask has an upper side, and which further comprises carrying out the filling step by terminating the filling at the upper side of the first mask. 15. The method according to claim 9, which further comprises subsequently removing the first mask. 16. The method according to claim 15, which further comprises carrying out the removing step with a further etching step. 17. The method according to claim 15, which further comprises carrying out the removing step outside the crossing area. 18. The method according to claim 1, which further comprises forming the first conductor element by applying one of a first material layer and a metallic layer on the upper side of the substrate region using aluminum. 19. The method according to claim 18, which further comprises depositing a material layer for the circuit element on one of the first material layer and the metallic layer as a TMR stack. 20. The method according to claim 1, which further comprises forming the first conductor element by applying one of a first material layer and a metallic layer substantially over a surface of the substrate region. 21. The method according to claim 20, which further comprises depositing a material layer for the circuit element over a substantial portion of a surface of one of the first material layer and the metallic layer as a TMR stack. 22. The method according to claim 1, which further comprises forming the first conductor element by applying one of a first material layer and a metallic layer over an entire surface of the substrate region. 23. The method according to claim 22, which further comprises depositing a material layer for the circuit element over an entire surface of one of the first material layer and the metallic layer as a TMR stack. 24. The method according to claim 1, which further comprises forming the first conductor element by applying one of a first material layer and a metallic layer in two-dimensional form of the substrate region. 25. The method according to claim 24, which further comprises depositing a material layer for the circuit element in two-dimensional form of one of the first material layer and the metallic layer as a TMR stack. 26. The method according to claim 1, which further comprises depositing one of a second material layer and a metallic layer to form the second conductor element after the formation of the first conductor element and of the respective first part of the circuit element. 27. The method according to claim 26, which further comprises depositing the one of the second material layer and the metallic layer over a substantial portion of a surface of the first conductor element. 28. The method according to claim 26, which further comprises depositing the one of the second material layer and the metallic layer over an entire surface of the first conductor element. 29. The method according to claim 26, which further comprises depositing the one of the second material layer and the metallic layer in two-dimensional form. 30. The method according to claim 26, wherein the deposition includes aluminum. 31. The method according to claim 26, which further comprises planarizing the one of the second material layer and the metallic layer. 32. The method according to claim 31, which further comprises carrying out the planarizing step by one of the group consisting of polishing and a CMP method. 33. The method according to claim 26, which further comprises forming a second mask. 34. The method according to claim 33, wherein the second mask is a hard mask. 35. The method according to claim 33, wherein the second ma sk is of silicon nitride. 36. The method according to claim 33, which further comprises, after forming the second mask, in a second etching step, structuring the second conductor element and, substantially simultaneously therewith, a second part of the circuit element. 37. The method according to claim 33, wherein the second mask has an extension, and which further comprises, after forming the second mask, in a second etching step, structuring the second conductor element and, substantially simultaneously therewith, a second part of the circuit element along an extension of the second mask. 38. The method according to claim 37, which further comprises filling with an intermediate insulating region. 39. The method according to claim 38, which further comprises carrying out the filling step by filling with an oxide. 40. The method according to claim 38, which further comprises carrying out the filling step by terminating the filling at an upper side of the second mask. 41. The method according to claim 40, which further comprises planarizing a surface of the second conductor element. 42. The method according to claim 41, which further comprises carrying out the planarizing step by one of the group consisting of polishing and a CMP method. 43. The method according to claim 42, which further comprises executing the second etching step in substeps including: a first etching substep, in which the second conductor element is structured up to a surface of the intermediate insulating region; and a second etching substep, in which the second part of the respective circuit element is subsequently structured up to the first side of the first conductor element. 44. The method according to claim 43, which further comprises filling with an intermediate insulating region after structuring the first conductor element, the second conductor element, and the circuit element. 45. The method according to claim 44, which further comprises carrying out the filling step by filling with an intermediate oxide. 46. The method according to claim 44, which further comprises carrying out the filling step by terminating the filling at one of the group consisting of: the upper side of the second mask; and the surface of the second conductor element. 47. The method according to claim 1, which further comprises utilizing strip masks having different strip directions to structure the first and second conductor elements. 48. The method according to claim 47, wherein the strip masks have strip directions substantially perpendicular to one another. 49. A method for manufacturing a semiconductor circuit system having a plurality of memory cells in which at least one circuit element is disposed substantially in a crossing area of at least two conductor elements and between the conductor elements, which comprises: forming at least one substrate region with a surface region having an upper side; forming at least one first conductor element and at least one second conductor element substantially on the surface region, the first conductor element and the second conductor element having at least one crossing area, the first conductor element having a first side facing away from the substrate region, and the second conductor element having a second side facing the substrate region; forming at least one circuit element substantially in the crossing area and between the first side and the second side; structuring the circuit element together with a structuring of at least one of the first and second conductor elements in a first etching step for the first conductor elements and a respective first part of the circuit element; executing the first etching step in substeps including: a first etching substep, in which: the respective first part of the circuit element is structured up to a surface of a first metallic layer for the first conductor element; and subsequently resulting edge regions of the first part of the circuit element are passivated through