초록 ▼

A ski binding assembly plate which can be fixed or can be adjusted in forward inclination and height wherein the pressure on the front guide part of the ski is increased. Because the ski binding assembly plate is fastened on the ski with a two-point support and arrest system, the ski obtains a free

A ski binding assembly plate which can be fixed or can be adjusted in forward inclination and height wherein the pressure on the front guide part of the ski is increased. Because the ski binding assembly plate is fastened on the ski with a two-point support and arrest system, the ski obtains a free bending moment, by which means the ski is dynamic and runs very smoothly. A wedge function and a force transmission system prevent the ski from being propelled back by the counter pressure in the region of the ski binding. With a damping system, vibrations and knocks are absorbed. The plate may be equipped with any brand of ski binding. It fits each type or brand of ski. The individual adjusting possibility of this plate permits the adaptation, which suits each ski, each skiing style and each technical level of the skier.

대표청구항 ▼

A ski binding assembly plate which can be fixed or can be adjusted in forward inclination and height wherein the pressure on the front guide part of the ski is increased. Because the ski binding assembly plate is fastened on the ski with a two-point support and arrest system, the ski obtains a free

A ski binding assembly plate which can be fixed or can be adjusted in forward inclination and height wherein the pressure on the front guide part of the ski is increased. Because the ski binding assembly plate is fastened on the ski with a two-point support and arrest system, the ski obtains a free bending moment, by which means the ski is dynamic and runs very smoothly. A wedge function and a force transmission system prevent the ski from being propelled back by the counter pressure in the region of the ski binding. With a damping system, vibrations and knocks are absorbed. The plate may be equipped with any brand of ski binding. It fits each type or brand of ski. The individual adjusting possibility of this plate permits the adaptation, which suits each ski, each skiing style and each technical level of the skier. ng step. 18. The method of claim 10 wherein the plasma reduces a surface species of the fist face and the second face. 19. A method for in-situ plasma bonding of semiconductor substrates, comprising: placing a first substrate and a second substrate into a plasma chamber, the first substrate having a first face and the second substrate having a second face; maintaining the first substrate and the second substrate in a vacuum in the plasma chamber; exposing at least the first face or at least the second face to a plasma; and placing the first face in contact with the second face to initialize a bond between the first face and the second face without breaking vacuum in the plasma chamber. 20. The method of claim 19 wherein said plasma comprises hydrogen bearing species. 21. The method of claim 19 wherein said plasma comprises an oxygen bearing species. 22. The method of claim 19 wherein said plasma comprises an argon with hydrogen. 23. The method of claim 19 wherein said plasma comprises an NH4 bearing species. 24. The method of claim 19 wherein the first face comprises an insulating material. 25. The method of claim 19 wherein the second face comprises an insulating material. 26. The method of claim 19 further comprising rinsing and drying the first substrate and the second substrate before the placing step. 27. The method of claim 19 wherein the plasma reduces a surface species of the first face and the second face. 998) 94-98 (1988). Yonehara, Takao, et al., "Epitaxial layer transfer by bond and etch back of porous Si", Applied Physics Letters, 64(16) (1994) 2108-2110. Brendel, Rolf, "A novel process for ultrathin monocrystalline silicon solar cells on glass", 14th European Photovoltaic Solar Energy Conference, Jun. 30, 1997-Jul. 4, 1997, pp. 1354-1357. Brendel, Rolf, et al., "Sol-gel coatings for light trapping in crystalline thin film silcon solar cells", International Conference on Coatings on Glass ICCG, Oct. 27-31, 1996, Saarbrucken, Germany, pp. 1-16. Oalting, S., et al., "Crystalline Thin Film Silicon Solar Cells By Ion-Assisted Deposition", 12th European Photovoltaic Solar Energy Conference, vol. II (1994) 1815-1818. Brendel, Rolf, et al., "Ultrathin cyrstalline silicon solar cells on glass substrates", Appl.Phys. Lett. 70(3) 91997) 390-392.