IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
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| 국제특허분류(IPC7판) |
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| 출원번호 |
US-0866566
(2001-05-25)
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발명자
/ 주소 |
- Clerk, Frederick George
- Mahdavian, Hossien
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| 출원인 / 주소 |
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| 대리인 / 주소 |
Killworth, Gottman, Hagan & Schaeff LLP
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| 인용정보 |
피인용 횟수 :
49 인용 특허 :
16 |
초록
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A movement detection and warning system is provided and includes a transmitter means for transmitting a signal in association with an event or an object. The signal is adapted for triggering a detector means. The detector means is tuned to only detect the signal transmitted by the transmitter means
A movement detection and warning system is provided and includes a transmitter means for transmitting a signal in association with an event or an object. The signal is adapted for triggering a detector means. The detector means is tuned to only detect the signal transmitted by the transmitter means when the detector is located within a predetermined distance from the transmitter means. The detector means activates an alarm means in response to being triggered by the transmitted signal thereby providing an early and distinct warning to people in the vicinity of the detector in order to eliminate or reduce the chances of the person sustaining injury. According to another aspect of the present invention there is provided a method of warning a person of the proximity of an object or event. According to the method, the object or event is associated with a transmitter means for transmitting a signal. The signal triggers a detector means and the detector is tuned to only detect the signal transmitted by the transmitter means. When the person and object or event are located within a predetermined distance from each other, the transmitter means transmits a signal to the detector means. In response, the detector means activates an alarm means in order to provide an early and distinct warning to the person in the vicinity of the object or event to alert the person to the presence of the object or event.
대표청구항
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A movement detection and warning system is provided and includes a transmitter means for transmitting a signal in association with an event or an object. The signal is adapted for triggering a detector means. The detector means is tuned to only detect the signal transmitted by the transmitter means
A movement detection and warning system is provided and includes a transmitter means for transmitting a signal in association with an event or an object. The signal is adapted for triggering a detector means. The detector means is tuned to only detect the signal transmitted by the transmitter means when the detector is located within a predetermined distance from the transmitter means. The detector means activates an alarm means in response to being triggered by the transmitted signal thereby providing an early and distinct warning to people in the vicinity of the detector in order to eliminate or reduce the chances of the person sustaining injury. According to another aspect of the present invention there is provided a method of warning a person of the proximity of an object or event. According to the method, the object or event is associated with a transmitter means for transmitting a signal. The signal triggers a detector means and the detector is tuned to only detect the signal transmitted by the transmitter means. When the person and object or event are located within a predetermined distance from each other, the transmitter means transmits a signal to the detector means. In response, the detector means activates an alarm means in order to provide an early and distinct warning to the person in the vicinity of the object or event to alert the person to the presence of the object or event. 970900, Hong, 438/278; US-5691216, 19971100, Yen et al., 438/275; US-6251732, 20010600, Hsu, 438/276; US-6403424, 20020600, Lee et al., 438/280 ess than to said substrate. 4. The method of claim 1, wherein said strained Si based layer is a Si layer. 5. The method of claim 1, wherein said strained Si based layer is a SiGe layer. 6. The method of claim 1, wherein said strained Si based layer contains up to 5% percent of C. 7. The method of claim 1, wherein said substrate is a Si wafer. 8. The method of claim 7, comprising the step of creating a porous layer on the surface of said Si wafer. 9. The method of claim 7, comprising the step of creating a porous subsurface layer on said Si wafer. 10. The method of claim 1, wherein the thickness of said strained Si based layer is between 1 nm and 50 nm. 11. The method of claim 1, wherein the steps of said method are carried out in an AICVD system. 12. The method of claim 1, wherein said layer transfer step is an ELTRAN process. 13. The method of claim 1, wherein said layer transfer step is a bonding, CMP polishing, and etch-back process. 14. The method of claim 1, wherein said layer transfer step is a Smart-Cut process. 15. The method of claim 1, wherein said second substrate is a Si wafer. 16. The method of claim 1, wherein said second substrate has an insulating layer on its surface, and wherein said insulating surface layer receives said Si based strained layer during said layer transfer. 17. The method of claim 16, wherein said insulating layer is silicon-oxide, silicon-nitride, aluminum-oxide, lithium-niobate, "low-k" material, "high-k" material, or combinations of two or more of said insulators. 18. A method for fabricating a strained Si based layer on an insulator comprising the steps of: growing epitaxially a SiGe layer on a substrate, wherein creating a varying Ge concentration in the thickness direction of said SiGe layer, said Ge concentration having a first value at the interface with said substrate and having a second value at full thickness of said SiGe layer, said second value of Ge concentration being larger than said first value of Ge concentration, furthermore said SiGe layer imbedding a Ge overshoot zone, wherein said Ge overshoot zone having a third value of Ge concentration, said third value being larger than said second value; depositing epitaxially said Si based layer onto said SiGe layer; and transferring said strained Si based layer onto said insulator. 19. The method of claim 18, wherein in said SiGe layer said varying Ge concentration has two regions: a step graded Ge concentration region, and a relaxed buffer region with a flat Ge concentration, said step graded region commencing at said interface with said substrate, said relaxed buffer region grown on top of said step graded region, furthermore said Ge overshoot zone being imbedded in said relaxed buffer region. 20. The method of claim 18, wherein in said SiGe layer said varying Ge concentration is a linearly graded concentration, furthermore said Ge overshoot zone being imbedded in said linearly graded concentration, an wherein said Ge overshoot zone is nearer to said full SiGe layer thickness than to said substrate. 21. The method of claim 18, wherein said strained Si based layer is a Si layer. 22. The method of claim 18, wherein said strained Si based layer is a SiGe layer. 23. The method of claim 18, wherein said strained Si based layer contains up to 5% percent of C. 24. The method of claim 18, wherein said layer transfer step is an ELTRAN process. 25. The method of claim 18, wherein said layer transfer step is a bonding, CMP polishing, and etch-back process. 26. The method of claim 18, wherein said layer transfer step is a Smart-Cut process. 27. The method of claim 18, wherein said insulating layer is silicon-oxide, silicon-nitride, aluminum-oxide, lithium-niobate, "low-k" material, "high-K" material, or combinations of two or more of said insulators.
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