초록 ▼

A system and method of using a blower device to maintain an inflatable carnival attraction at a level of inflation safe for using the inflatable attraction, wherein the blower device operates on electrical energy received from an external source, monitoring the electrical energy, and triggering an a

A system and method of using a blower device to maintain an inflatable carnival attraction at a level of inflation safe for using the inflatable attraction, wherein the blower device operates on electrical energy received from an external source, monitoring the electrical energy, and triggering an alarm if the electrical energy is insufficient for the blower device to maintain the level of inflation safe for using the inflatable attraction, wherein the alarm is of sufficient loudness to be heard by personnel operating the attraction at a location distant from the blower device.

대표청구항 ▼

A system and method of using a blower device to maintain an inflatable carnival attraction at a level of inflation safe for using the inflatable attraction, wherein the blower device operates on electrical energy received from an external source, monitoring the electrical energy, and triggering an a

A system and method of using a blower device to maintain an inflatable carnival attraction at a level of inflation safe for using the inflatable attraction, wherein the blower device operates on electrical energy received from an external source, monitoring the electrical energy, and triggering an alarm if the electrical energy is insufficient for the blower device to maintain the level of inflation safe for using the inflatable attraction, wherein the alarm is of sufficient loudness to be heard by personnel operating the attraction at a location distant from the blower device. t al., 438/586; US-5682055, 19971000, Huang et al., 257/408; US-6008085, 19991200, Sung et al., 438/253; US-6133599, 20001000, Sung et al., 257/296 i based layer onto said insulator. 19. The method of claim 18, wherein in said SiGe layer said varying Ge concentration has two regions: a step graded Ge concentration region, and a relaxed buffer region with a flat Ge concentration, said step graded region commencing at said interface with said substrate, said relaxed buffer region grown on top of said step graded region, furthermore said Ge overshoot zone being imbedded in said relaxed buffer region. 20. The method of claim 18, wherein in said SiGe layer said varying Ge concentration is a linearly graded concentration, furthermore said Ge overshoot zone being imbedded in said linearly graded concentration, an wherein said Ge overshoot zone is nearer to said full SiGe layer thickness than to said substrate. 21. The method of claim 18, wherein said strained Si based layer is a Si layer. 22. The method of claim 18, wherein said strained Si based layer is a SiGe layer. 23. The method of claim 18, wherein said strained Si based layer contains up to 5% percent of C. 24. The method of claim 18, wherein said layer transfer step is an ELTRAN process. 25. The method of claim 18, wherein said layer transfer step is a bonding, CMP polishing, and etch-back process. 26. The method of claim 18, wherein said layer transfer step is a Smart-Cut process. 27. The method of claim 18, wherein said insulating layer is silicon-oxide, silicon-nitride, aluminum-oxide, lithium-niobate, "low-k" material, "high-K" material, or combinations of two or more of said insulators.