IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
|
출원번호 |
US-0238869
(2002-09-11)
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발명자
/ 주소 |
- Pitt, Lance Douglas
- McClintock, Dorothy Anne
- Long, Bing
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출원인 / 주소 |
- TeleCommunication Systems
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
149 인용 특허 :
7 |
초록
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GPS satellites are culled into a minimum, preferred group having a longest dwell time within a cone of space, and communicated to mobile devices or subscribers within a particular region (e.g., serviced by a particular base station). The culling may initially be a list of GPS satellites visible to a
GPS satellites are culled into a minimum, preferred group having a longest dwell time within a cone of space, and communicated to mobile devices or subscribers within a particular region (e.g., serviced by a particular base station). The culling may initially be a list of GPS satellites visible to a particular base station at a particular time. As a preferred culling, only those GPS satellites currently within a cone of space above the relevant base station are selected for communication by a mobile device within the service area of the relevant base station. As an ultimate culling, a minimum set of GPS satellites may be selected based on, e.g., being not only within an arbitrary cone of space normal to the base station, but also projected to remain within that cone of space for the longest period of time, i.e., having the longest dwell time.
대표청구항
▼
GPS satellites are culled into a minimum, preferred group having a longest dwell time within a cone of space, and communicated to mobile devices or subscribers within a particular region (e.g., serviced by a particular base station). The culling may initially be a list of GPS satellites visible to a
GPS satellites are culled into a minimum, preferred group having a longest dwell time within a cone of space, and communicated to mobile devices or subscribers within a particular region (e.g., serviced by a particular base station). The culling may initially be a list of GPS satellites visible to a particular base station at a particular time. As a preferred culling, only those GPS satellites currently within a cone of space above the relevant base station are selected for communication by a mobile device within the service area of the relevant base station. As an ultimate culling, a minimum set of GPS satellites may be selected based on, e.g., being not only within an arbitrary cone of space normal to the base station, but also projected to remain within that cone of space for the longest period of time, i.e., having the longest dwell time. fore said growing a gate oxide layer, thinning the top silicon layer and doping the thinned layer with doping impurities. 7. The method of claim 6 wherein the silicon on insulator substrate is fully depleted, and wherein the top silicon layer is thinned to a thickness of between about 10 nm to 50 nm. 8. The method of claim 6 wherein the silicon on insulator substrate is partially depleted, and wherein the top silicon layer is thinned to a thickness of less than or equal to four micrometers. 9. The method of claim 1 wherein the top silicon layer is doped with doping impurities taken from the group of impurities consisting of phosphorus ions, implanted at a dose of between about 1·1011cm-2to 5·1012cm-2,and at an energy level of between about 10 keV to 50 keV, and BF2ions implanted at a does of between about 1·1011cm-2to 5·1012cm-2,and at an energy level of between about 15 keV to 80 keV. 10. The method of claim 1 wherein said forming an insulating cup includes growing a layer of oxide by thermal oxidation about the first layer of material, the oxide layer and the top silicon layer; depositing a layer of oxide by CVD over the structure to a thickness of between about 50 nm to 200 nm; and etching the oxide to the level of the first layer of material, leaving a sidewall of between about 50 nm to 200 nm thick. 11. The method of claim 1 wherein the material of the first and second layers of material is silicon nitride, and which, after said implanting ions to form a source region and a drain region, includes planarizing the structure; removing the silicon nitride by etching; and depositing metal to form a metal gate electrode. 12. A method of isolating a CMOS device on a silicon on insulator substrate, wherein the substrate includes an insulating layer having a layer of top silicon formed thereon, comprising: growing a gate oxide layer on the top silicon layer; depositing a first layer of material taken from the group of materials consisting of polysilicon SiGe and silicon nitride on the gate oxide layer; removing the first layer of material, the gate oxide layer and the top silicon layer from a device field region; forming an insulating cup about the first layer of material, the gate oxide layer and the top silicon layer, including growing a layer of oxide by thermal oxidation about the first layer of material, the oxide layer and the top silicon layer; depositing a layer of oxide by CVD over the structure; and etching the oxide to the level of the first layer of material, leaving a sidewall; depositing a second layer of material taken from the group of materials consisting of polysilicon and silicon nitride over the first layer of material and the insulating cup; etching the first layer of material and the second layer of material to form a gate electrode; implanting ions to form a source region and a drain region; passivating the structure; and metallizing the structure. 13. The method of claim 12 which further includes, before said growing a gate oxide layer, thinning the top silicon layer and doping the thinned layer with doping impurities. 14. The method of claim 13 wherein the silicon on insulator substrate is fully depleted, and wherein the top silicon layer is thinned to a thickness of between about 20 nm to 50 nm. 15. The method of claim 13 wherein the silicon on insulator substrate is partially depleted, and wherein the top silicon layer is thinned to a thickness of less than or equal to four micrometers. 16. The method of claim 12 wherein the top silicon layer is doped with doping impurities taken from the group of impurities consisting of phosphorus ions, implanted at a dose of between about 1·1011cm-2to 5·1012cm-2,and at an energy level of between about 10 keV to 50 keV, and BF2ions implanted at a does of between about 1·1011cm-2
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