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A burner apparatus is operated in a plurality of distinct modes. In a startup mode, flows of oxidant and primary fuel are ignited by an igniter and are provided simultaneously with a flow of secondary fuel until a process chamber reaches the auto-ignition temperature of the secondary fuel. In a subs

A burner apparatus is operated in a plurality of distinct modes. In a startup mode, flows of oxidant and primary fuel are ignited by an igniter and are provided simultaneously with a flow of secondary fuel until a process chamber reaches the auto-ignition temperature of the secondary fuel. In a subsequent mode, flows of oxidant and secondary fuel are provided simultaneously to the exclusion of a flow of primary fuel.

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A burner apparatus is operated in a plurality of distinct modes. In a startup mode, flows of oxidant and primary fuel are ignited by an igniter and are provided simultaneously with a flow of secondary fuel until a process chamber reaches the auto-ignition temperature of the secondary fuel. In a subs

A burner apparatus is operated in a plurality of distinct modes. In a startup mode, flows of oxidant and primary fuel are ignited by an igniter and are provided simultaneously with a flow of secondary fuel until a process chamber reaches the auto-ignition temperature of the secondary fuel. In a subsequent mode, flows of oxidant and secondary fuel are provided simultaneously to the exclusion of a flow of primary fuel. /SUB>/RIS+Tn/Rn) is equal to the time for removing the doped silicon layer, the semiconductor layer, and the removed insulating layer in the non-TFT region (Tn/Rn+Ta/Ra+TINS/RINS). 11. The method of claim 7, further comprising the following steps: etching the passivation layer to expose one of the source electrode and the drain electrode; and forming a transparent conductive layer above the passivation lay