초록 ▼

A method and system for fabricating micron and sub-micron-sized features within a polymer layer of a nascent semiconductor device or other micro-device or nano-device. Small features are directly imprinted with an optical-mechanical stamp having corresponding intrusions. Large features are created b

A method and system for fabricating micron and sub-micron-sized features within a polymer layer of a nascent semiconductor device or other micro-device or nano-device. Small features are directly imprinted with an optical-mechanical stamp having corresponding intrusions. Large features are created by exposing the surface of selected areas of the polymer surface to UV radiation by transmitting UV radiation through the optical-mechanical stamp to chemically alter the polymer, allowing either UV-exposed or UV-shielded areas to be removed by solvents. Thus, described embodiments of the present invention provide for a partially transparent imprinting mask that employs purely mechanical stamping for fine features and lithography-like chemical polymer removal for large features.

대표청구항 ▼

1. A method for fabricating features in a polymer layer of a device designed to include micron and sub-micron elements and components, the method comprising: providing an optical-mechanical pattern-imprinting mask; mechanically creating narrow, submicorn features within the polymer layer by tran

1. A method for fabricating features in a polymer layer of a device designed to include micron and sub-micron elements and components, the method comprising: providing an optical-mechanical pattern-imprinting mask; mechanically creating narrow, submicorn features within the polymer layer by transferring a pattern from the optical-mechanical pattern-imprinting mask onto the polymer layer; and creating broad features within the polymer layer by transmitting radiation through the optical-mechanical pattern-imprinting mask to selectively expose regions of the polymer to the radiation, leading to differential chemical stability of the exposed regions of the polymer and non-exposed regions of the polymer; and removing regions of the polymer susceptible to a chemical removal method. 2. The method of claim 1 wherein the optical-mechanical pattern-imprinting mask includes intrusions on a surface pressed into the polymer layer. 3. The method of claim 1 wherein the optical-mechanical pattern-imprinting mask includes intrusions on a surface between which low-viscosity polymer solution is drawn by capillary action. 4. The method of claim 1 wherein the optical-mechanical pattern-imprinting mask includes radiation-blocking regions to block exposure of selected polymer regions. 5. The method of claim 4 wherein the radiation is ultraviolet light. 6. The method of claim 5 wherein the polymer is cured by exposure to ultraviolet light, and wherein the radiation-blocking regions correspond to non-feature regions of the polymer. 7. The method of claim 5 wherein the polymer is chemically destabilized by exposure to ultraviolet light, and wherein the radiation-blocking regions correspond to feature regions of the polymer. 8. A device designed to include micron and sub-micron elements and components that includes features produced by the method of claim 1. 9. An optical-mechanical pattern-imprinting mask for fabricating features in a polymer layer of a device designed to include micron and sub-micron elements and components, the optical-mechanical pattern-imprinting mask comprising: intrusions that, when the optical-mechanical pattern-imprinting mask is pressed against a polymer layer, mechanically create narrow, submicorn features within the polymer layer; and recessed areas, corresponding to broad features, with transparency to radiation suitable to differentially expose regions of the polymer layer underlying the recessed areas to radiation passing through portions of the optical-mechanical pattern-imprinting mask, leading to differential chemical stability between regions of the polymer exposed to transmitted radiation and regions of the polymer not exposed to transmitted radiation, so that, when the optical-mechanical pattern-imprinting mask is pressed against the polymer layer and the optical-mechanical pattern-imprinting mask is exposed to radiation, broad features underlying the recessed areas are subsequently created by removing from the broad features polymer susceptible to a chemical removal method. 10. The optical-mechanical pattern-imprinting mask of claim 9 wherein the recessed areas corresponding to broad features include radiation blocks that block transmission of radiation through the optical-mechanical pattern-imprinting mask and wherein the polymer is cured by exposure to radiation. 11. The optical-mechanical pattern-imprinting mask of claim 9 wherein the recessed areas corresponding to broad features transmit radiation through the optical-mechanical pattern-imprinting mask, wherein remaining areas of the optical-mechanical pattern-imprinting mask block transmission of radiation, and wherein the polymer is destabilized by exposure radiation.