초록 ▼

A workpiece support having dichotomy of thermal paths therethrough is provided for controlling the temperature of a workpiece support thereon. In one embodiment, a workpiece support includes a platen body having a plug centrally disposed in a workpiece support surface of the platen body. A lower sur

A workpiece support having dichotomy of thermal paths therethrough is provided for controlling the temperature of a workpiece support thereon. In one embodiment, a workpiece support includes a platen body having a plug centrally disposed in a workpiece support surface of the platen body. A lower surface of the plug defines a void between the plug and a bottom of the bore. The void creates a dichotomy of thermal paths through the platen body thus controlling the temperature of a wafer support surface. Alternatively, the plug and platen body may be fabricated from materials having different rates of thermal conductivity to created the dichotomy of thermal paths in addition to or in absence of the void.

대표청구항 ▼

A workpiece support having dichotomy of thermal paths therethrough is provided for controlling the temperature of a workpiece support thereon. In one embodiment, a workpiece support includes a platen body having a plug centrally disposed in a workpiece support surface of the platen body. A lower sur

A workpiece support having dichotomy of thermal paths therethrough is provided for controlling the temperature of a workpiece support thereon. In one embodiment, a workpiece support includes a platen body having a plug centrally disposed in a workpiece support surface of the platen body. A lower surface of the plug defines a void between the plug and a bottom of the bore. The void creates a dichotomy of thermal paths through the platen body thus controlling the temperature of a wafer support surface. Alternatively, the plug and platen body may be fabricated from materials having different rates of thermal conductivity to created the dichotomy of thermal paths in addition to or in absence of the void. zone, wherein said inert gas source is coupled to said acceptor impurity source zone; and means for heating an acceptor impurity within said acceptor impurity source zone to a fourth temperature. 4. The reactor of claim 1, further comprising: a donor impurity source zone, wherein said inert gas source is coupled to said donor impurity source zone; and means for heating a donor impurity within said donor impurity source zone to a fourth temperature. 5. A reactor for growing a gallium containing single crystal, comprising: a first growth zone; means for heating at least one substrate within said first growth zone to a first temperature, wherein said first temperature is greater than 850° C.; a gallium source zone; means for simultaneously heating a first portion of a gallium source within said gallium source zone to a second temperature and a second portion of said gallium source within said gallium source zone to a third temperature, wherein said second temperature is greater than 450° C., wherein said third temperature is greater than 30° C., and wherein said third temperature is less than 100° C.; a halide reaction gas source coupled to said gallium source zone; an inert gas source coupled to said gallium source zone to transport a first reaction product from said gallium source zone to said first growth zone; a reaction gas source coupled to said first growth zone; and means for transferring said at least one substrate within said first growth zone to a second growth zone. 6. The reactor of claim 5, further comprising means for heating said at least one substrate within said second growth zone to a fourth temperature. 7. The reactor of claim 6, wherein said first temperature is within a range of 1,000° C. to 1,100° C. and wherein said fourth temperature is within a range of 850° C. to 1,000° C. 8. A reactor for growing a gallium containing single crystal, comprising: a multi-zone heater at least partially surrounding at least a portion of the reactor; a first growth zone, wherein said multi-zone heater heats any substrates held within said first growth zone to a first temperature in the temperature range of 1,000° C. to 1,100° C.; a second growth zone, wherein said multi-zone heater heats any substrates held within said second growth zone to a second temperature in the temperature range of 850° C. to 1,000° C.; a multi-temperature gallium source zone, wherein said multi-zone heater heats a first portion of a gallium source within said multi-temperature gallium source zone to a third temperature greater than 450° C., and wherein said multi-zone heater heats a second portion of said gallium source within said multi-temperature gallium source zone to a fourth temperature greater than 30° C. and less than 100° C.; an HCl gas source coupled to said multi-temperature gallium source zone, wherein a reaction between an HCl gas supplied by said HCl gas source to said multi-temperature gallium source zone and said first portion of said gallium source forms a gallium chloride reaction product; an inert gas source coupled to said multi-temperature gallium source zone, wherein an inert gas supplied by said inert gas source to said multi-temperature gallium source zone transports said gallium chloride reaction product from said multi-temperature gallium source zone to said first and second growth zones; an ammonia gas source coupled to said first and second growth zones, wherein a reaction between an ammonia gas supplied by said ammonia gas source to said first and second growth zones and said gallium chloride reaction product forms a first portion of said gallium containing single crystal; and means for transporting said at least one substrate between said first growth zone and said second growth zone, wherein a reaction between said ammonia gas supplied by said ammonia gas source to said second growth zone and said gallium chloride reaction product forms a second portion of said gallium cont aining single crystal. 9. The reactor of claim 8, said multi-zone heater further comprising at least one resistive heater. 10. The reactor of claim 8, wherein said transporting means is a manually operating substrate positioning system. 11. The reactor of claim 8, wherein said transporting means is an automatic substrate positioning system. 12. The reactor of claim 8, further comprising a first aluminum source zone, wherein said multi-zone heater heats a first aluminum source within said first aluminum source zone to a fifth temperature greater than 700° C., wherein said HCl gas source is coupled to said first aluminum source zone, wherein a reaction between said HCl gas supplied by said HCl gas source to said first aluminum source zone and said first aluminum source forms a first aluminum trichloride reaction product, wherein said inert gas source is coupled to said first aluminum source zone, wherein said inert gas supplied by said inert gas source to said first aluminum source zone transports said first aluminum trichloride reaction product from said first aluminum source zone to said first and second growth zones, and wherein a reaction between said ammonia gas supplied by said ammonia gas source to said first and second growth zones and said gallium chloride reaction product and said first aluminum trichloride reaction product forms said first portion of said gallium containing single crystal, said gallium containing single crystal containing aluminum. 13. The reactor of claim 12, further comprising a second aluminum source zone, wherein said multi-zone heater heats a second aluminum source within said second aluminum source zone to a sixth temperature greater than 700° C., wherein said HCl gas source is coupled to said second aluminum source zone, wherein a reaction between said HCl gas supplied by said HCl gas source to said second aluminum source zone and second first aluminum source forms a second aluminum trichloride reaction product, wherein said inert gas source is coupled to said second aluminum source zone, wherein said inert gas supplied by said inert gas source to said second aluminum source zone transports said second aluminum trichloride reaction product from said second aluminum source zone to said first and second growth zones, and wherein a reaction between said ammonia gas supplied by said ammonia gas source to said first and second growth zones and said gallium chloride reaction product and said second aluminum trichloride reaction product forms said first portion of said gallium containing single crystal, said gallium containing single crystal containing aluminum. 14. The reactor of claim 8, further comprising an acceptor impurity zone, wherein said multi-zone heater heats an acceptor impurity within said acceptor impurity zone to a fifth temperature, wherein said inert gas source is coupled to said acceptor impurity zone, wherein said inert gas supplied by said inert gas source to said acceptor impurity zone transports said acceptor impurity from said acceptor impurity zone to said first and second growth zones, wherein said gallium containing single crystal contains said acceptor impurity. 15. The reactor of claim 8, further comprising a donor impurity zone, wherein said multi-zone heater heats a donor impurity within said donor impurity zone to a fifth temperature, wherein said inert gas source is coupled to said donor impurity zone, wherein said inert gas supplied by said inert gas source to said donor impurity zone transports said donor impurity from said donor impurity zone to said first and second growth zones, wherein said gallium containing single crystal contains said donor impurity. 16. A reactor for growing a gallium containing single crystal, comprising: a multi-zone heater at least partially surrounding at least a portion of the reactor; a first growth zone, wherein said multi-zone heater heats any substrates held within said first growth zone to a first temperature in the temperat