Liquid phase oxidation of halogenated ortho-xylenes
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C07D-209/48
C07D-493/02
C07C-051/16
C07C-051/255
출원번호
US-0063113
(2002-03-22)
발명자
/ 주소
Colborn, Robert Edgar
Hall, David Bruce
Koch, Peter
Oeckel, Gerald
출원인 / 주소
General Electric Company
인용정보
피인용 횟수 :
3인용 특허 :
180
초록
A method for the manufacture of halophthalic acid by liquid phase oxidation of halo-ortho-xylene is disclosed. The halophthalic acid may be dehydrated to form halophthalic anhydride which is useful in the synthesis of polyetherimide.
대표청구항▼
A method for the manufacture of halophthalic acid by liquid phase oxidation of halo-ortho-xylene is disclosed. The halophthalic acid may be dehydrated to form halophthalic anhydride which is useful in the synthesis of polyetherimide. al., 549/248; US-4582912, 19860400, Saleh et al., 549/239; US-458
A method for the manufacture of halophthalic acid by liquid phase oxidation of halo-ortho-xylene is disclosed. 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The method of claim 1, wherein the molecular oxygen containing gas has an oxygen concentration of greater than or equal to about 6 percent oxygen. 3. The method of claim 1, wherein the molecular oxygen containing gas is air. 4. The method of claim 1, wherein the cobalt source, manganese source, zirconium or hafnium source, and bromide source are soluble in acetic acid. 5. The method of claim 4, wherein the cobalt source comprises cobalt acetate, cobalt napthenate, cobalt sulfate, cobalt acetylacetonate, cobalt benzoylacetonate, cobalt bromide, cobalt carbonate, cobalt chloride, cobalt fluoride, cobalt nitrate, cobalt stearate, or a hydrate of one of the foregoing cobalt compounds. 6. The method of claim 5, wherein the cobalt source comprises cobalt acetate or a hydrate of cobalt acetate. 7. The method of claim 4, wherein the manganese source comprises manganese acetate, manganese sulfate, manganese acetylacetonate, manganese bromide, manganese carbonate, manganese chloride, manganese fluoride, or manganese nitrate, or a hydrate of one of the foregoing manganese compounds. 8. The method of claim 7, wherein the manganese source comprises manganese acetate or a hydrate of manganese acetate. 9. The method of claim 4, wherein the zirconium source comprises zirconium acetate, zirconium sulfate, zirconium citrate, zirconium fluoride, zirconium hydroxide, zirconium alkoxide, zirconium chloride, zirconium bromide, zirconium acetylacetonate, or a hydrate of one of the foregoing zirconium compounds. 10. The method of claim 9, wherein the zirconium source comprises zirconium acetate or a hydrate of zirconium acetate. 11. The method of claim 4, wherein the source of hafnium comprises hafnium chloride, hafnium bromide, hafnium fluoride, hafnium iodide, hafnium nitride, hafnium sulfate, hafnium triflate, hafnium nitrate, or a hydrate of one of the foregoing hafnium compounds. 12. The method of claim 11, wherein the source of hafnium comprises hafnium chloride. 13. The method of claim 4, wherein the bromide source comprises bromine, hydrogen bromide, a metal-bromide salt or an organic bromide. 14. The method of claim 13, wherein the bromide source comprises sodium bromide. 15. The method of claim 13, wherein the bromide source comprises hydrogen bromide. 16. The method of claim 1, wherein the amount of the cobalt source is about 0.5 to about 1.2 mole percent, based on said chloro-ortho-xylene. 17. The method of claim 1, wherein the amount of the manganese source is about 0.3 to about 0.6 mole percent, based on said chloro-ortho-xylene. 18. The method of claim 1, wherein the amount of the source of zirconium or hafnium is about 0.03 to about 0.06 mole percent, based on said chloro-ortho-xylene. 19. The method of claim 1, wherein the amount of the source of bromide is less than or equal to about 0.04 mole percent, based on said chloro-ortho-xylene. 20. The method of claim 1, wherein the temperature is greater than or equal to 160° C. 21. The method of claim 1, wherein the conversion of said chloro-ortho-xylene to chlorophthalic acid is 95 percent or greater. 22. The method of claim 1, wherein said chloro-ortho-xylene comprises the 3-isomer, the 4-isomer or a mixture of 3- and 4-isomers. 23. The method of claim 1, further comprising increasing the temperature of the reaction mixture while maintaining the off gas oxygen concentration below about 5 percent by volume. 24. A method for the manufacture of chlorophthalic anhydride comprising: forming a reaction mixture comprising: a mixture of about 5 to about 3 parts by weight of acetic acid to 1 part by weight of a chloro-ortho-xylene, about 0.25 to about 2 mole percent, based on said chloro-ortho-xylene, of a cobalt source, about 0.1 to about
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이 특허에 인용된 특허 (180)
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