초록 ▼

A semiconductor integared circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabriacting such circuits will be provided. A gate insulating film of the TFT required to operate a high speed (e.g.

A semiconductor integared circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabriacting such circuits will be provided. A gate insulating film of the TFT required to operate a high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).

대표청구항 ▼

A semiconductor integared circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabriacting such circuits will be provided. A gate insulating film of the TFT required to operate a high speed (e.g.

A semiconductor integared circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabriacting such circuits will be provided. A gate insulating film of the TFT required to operate a high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals). organic layer. 12. The device of claim 11, wherein said organic conducting material is selected from the group consisting of polyaniline, PEDOT-PSS, and a conducting or semi-conducting organic salt thereof. 13. The device of claim 3, wherein said cathode comprises a material having a low work function. 14. The device of claim 13, wherein the material having a low work function is selected from the group consisting of aluminum, magnesium, calcium, samarium, lithium, cesium, and mixtures thereof. 15. The device of claim 14, wherein said cathode comprises lithium and aluminum. 16. The device of claim 14, wherein said cathode further comprises a layer of dielectric material adjacent to said first organic layer formed from at least one electron-injection/electron-transport material. 17. The device of claim 16, wherein said dielectric material is selected from the group consisting of lithium fluoride, cesium fluoride, lithium chloride and cesium chloride. 18. The device of claim 17, wherein the cathode comprises magnesium and lithium fluoride and further comprises silver. 19. The device of claim 17, wherein the cathode comprises aluminum and lithium fluoride. 20. The device of claim 3, wherein said at least one hole-injection/hole-transport material comprises a compound selected from the group consisting of BPA-BCA, NA-DNPB, NA-BCA and mixtures thereof. 21. The device of claim 3, further comprising an emitter layer between said first organic layer and said second organic layer. 22. The device of claim 21, wherein said emitter layer comprises a host compound. 23. The device of claim 22, wherein said host compound is selected from the group consisting of ALQ and IDE-102. 24. The device of claim 21, wherein said emitter layer further comprises a dopant compound. 25. The device of claim 24, wherein said dopant compound is selected from the group consisting of Coumarin 6, Coumarin 485, Coumarin, 487, Coumarin 490, Coumarin 498, Coumarin 500, Coumarin 503, Coumarin 504, Coumarin 504T, Coumarin 510, Coumarin 515, Coumarin 519, Coumarin 521, Coumarin 521T, Coumarin 522B, Coumarin 523, Coumarin 525, Coumarin 535, Coumarin 540A, Coumarin 545, a quinacridone derivative, a distyrylamine derivative, IDE-102, rubrene, DCJTB, pyrromethane 546, and mixtures thereof. 26. The device of claim 3, wherein said at least one electron-injection/electron-transport material comprises a compound selected from the group consisting of ALQ, and an oxadiazole derivative. 27. The device of claim 26, wherein said at least one electron-injection/electron-transport material is ALQ. 28. The device of claim 3, wherein said device is a microdisplay device. 29. An organic light emitting diode device comprising: (a) a cathode; (b) an anode; (c) a layer formed from at least one electron-injection/electron-transport material that is adjacent to said cathode; (d) a hole-injection layer that is adjacent to said anode; and (e) at least one hole-transport layer that is adjacent to said hole-injection layer, wherein at least one of said hole-injection and hole-transport layers comprises a compound of formula 1: wherein R1is selected from the group consisting of biphenyl, naphthyl, phenyl and Q is selected from the group consisting of a bond, C1-C4alkyl, --C(O)--, --S(O)--, --O--Si--O--, --O--Ge--O--, --O--, and R2and R3are each independently selected from the group consisting of aryl, F, Cl, --CF3,saturated alkyl of up to 10 carbon atoms, SO2R6,Si(R6)3,and OR6,or R2and R3taken together form a heterocyclic ring of up to 8 atoms, wherein one of the 8 atoms is nitrogen and another of the 8 atoms is either nitrogen or oxygen, or R2and R3taken together with the phenyl group to which they are attached form a fused polycyclic aromatic system, wherein said fused polycyclic aromatic system comprises up to 16 carbon atoms; R4and R5are each independently selected from the group consisting of: or R4and R5taken together with the nitrogen to which they are attached are selected from the group consisting of: R6is C1-C4straight or branched saturated alkyl; R7and R8are each independently selected from the group consisting of --OR9,C1-C4alkyl, aryl, --SCH3,--CF3,--Cl, --Br, --NO2,and --COOR9; and R9is selected from the group consisting of C1-C6alkyl and aryl. 30. The device of claim 29, wherein said anode is a bottom electrode and said cathode is a top electrode. 31. The device of claim 29, wherein said anode is semi-transparent. 32. The device of claim 29, wherein said cathode is semi-transparent. 33. The device of claim 30, wherein said anode comprises a metal having a high work function, a metal oxide or mixtures thereof. 34. The device of claim 33, wherein said anode comprises a material selected from the group consisting of indium tin oxide, indium zinc tin oxide, indium zinc oxide, ruthenium dioxide, molybdenum oxide, nickel oxide and mixtures thereof. 35. The device of claim 34, wherein said anode comprises indium tin oxide. 36. The device of claim 30, wherein said anode further comprises a layer of dielectric material adjacent to said second hole-injection layer. 37. The device of claim 36, wherein said dielectric material is selected from the group consisting of lithium fluoride, cesium fluoride, silicon oxide and silicon dioxide. 38. The device of claim 30, wherein said anode further comprises a layer of organic conducting material adjacent to said hole-injection layer. 39. The device of claim 38, wherein said organic conducting material is selected from the group consisting of polyaniline, PEDOT-PSS, and a conducting or semi-conducting organic salt thereof. 40. The device of claim 30, wherein said cathode comprises a material having a low work function. 41. The device of claim 40, wherein the material having a low work function is selected from the group consisting of aluminum, magnesium, calcium, samarium, lithium, cesium, and mixtures thereof. 42. The device of claim 41, wherein said cathode comprises lithium and aluminum. 43. The device of claim 30, wherein said cathode further comprises a layer of dielectric material adjacent to said layer formed from at least one electron-injection/electron-transport material. 44. The device of claim 43, wherein said dielectric material is selected from the group consisting of lithium fluoride, cesium fluoride, lithium chloride and cesium chloride. 45. The device of claim 44, wherein the cathode comprises magnesium and lithium fluoride and further comprises silver. 46. The device of claim 44, wherein the cathode comprises aluminum and lithium fluoride. 47. The device of claim 30, wherein at least one of said hole-injection and hole-transport layers comprises a compound selected from the group consisting of BPA-BCA, NA-DNPB, NA-BCA and mixtures thereof. 48. The device of claim 47, wherein the hole-injection layer comprises BPA-DNPB and the at least one hole transport layer comprises BPA-BCA. 49. The device of claim 30, further comprising an emitter layer between said organic layer formed from at least one electron-injection/electron-transport material and said at least one hole-transport layer. 50. The device of claim 49, wherein said emitter layer comprises a host compound. 51. The device of claim 50, wherein said host compound is selected from the group consisting of ALQ and IDE-102. 52. The device of claim 50, wherein said emitter layer further comprises a dopant compound. 53. The device of claim 52, wherein said dopant compound is selected from the group consisting of Coumarin 6, Coumarin 485, Coumarin, 487, Coumarin 490, Coumarin 498, Coumarin 500, Coumarin 503, Coumarin