초록 ▼

The invention relates to a new and improved heavy oil hydrocracking process using a multimetallic liquid catalyst in a slurry-bed reactor, particularly an improvement of lightweight treatment of heavy oil in the petroleum processing technology. According to the present invention, a slurry-bed hydroc

The invention relates to a new and improved heavy oil hydrocracking process using a multimetallic liquid catalyst in a slurry-bed reactor, particularly an improvement of lightweight treatment of heavy oil in the petroleum processing technology. According to the present invention, a slurry-bed hydrocracking reactor and a highly dispersed multimetallic liquid catalyst are mainly applied during the process. A fixed-bed hydrotreating reactor is also used on line to enhance lightweight oil yield from heavy oil under normal pressure.

대표청구항 ▼

The invention relates to a new and improved heavy oil hydrocracking process using a multimetallic liquid catalyst in a slurry-bed reactor, particularly an improvement of lightweight treatment of heavy oil in the petroleum processing technology. According to the present invention, a slurry-bed hydroc

The invention relates to a new and improved heavy oil hydrocracking process using a multimetallic liquid catalyst in a slurry-bed reactor, particularly an improvement of lightweight treatment of heavy oil in the petroleum processing technology. According to the present invention, a slurry-bed hydrocracking reactor and a highly dispersed multimetallic liquid catalyst are mainly applied during the process. A fixed-bed hydrotreating reactor is also used on line to enhance lightweight oil yield from heavy oil under normal pressure. hod of claim 16 wherein the sputtering gas mixture comprises more Ar than Xe by volume. 19. The method of claim 16 wherein the sputtering gas mixture consists essentially of Xe and Ar. 20. The method of claim 19 wherein the sputtering gas mixture comprises more Xe than Ar by volume. 21. The method of claim 19 wherein the sputtering gas mixture comprises more Ar than Xe by volume. 22. A sputtering method of forming a metal layer comprising silver and tungsten, comprising: providing a semiconductor substrate within a sputter deposition chamber; providing one or more target(s) within the chamber which comprise(s) at least tungsten and silver; and sputtering the one or more target(s) using a sputtering gas comprising at least one of Xe, Kr and Rn under conditions effective to deposit a metal layer comprising silver and tungsten onto the semiconductor substrate. 23. The method of claim 22 wherein one target within the chamber comprises a mixture of tungsten and silver. 24. The method of claim 22 wherein only a single target is provided within the chamber, the single target comprising a mixture of tungsten and silver. 25. The method of claim 22 wherein at least two targets are provided within the chamber, one of the targets consisting essentially of silver, another of the targets consisting essentially of tungsten. 26. The method of claim 22 wherein only two targets are provided within the chamber, one of the targets consisting essentially of silver, another of the targets consisting essentially of tungsten. 27. The method of claim 22 wherein the sputtering gas comprises Xe. 28. The method of claim 22 wherein the sputtering gas comprises Kr. 29. The method of claim 22 wherein the sputtering gas comprises Rn. 30. The method of claim 22 wherein the sputtering gas consists essentially of one or more of Xe, Kr, and Rn. 31. The method of claim 22 wherein the sputtering gas comprises a mixture of at least two of Xe, Kr, and Rn. 32. The method of claim 22 wherein the sputtering gas comprises another gas other than Xe, Kr, and Rn. 33. The method of claim 22 wherein the conditions comprise DC magnetron sputtering. 34. The method of claim 22 wherein the sputtering is effective to form the metal layer to consist essentially of silver and tungsten. 35. A sputtering method of forming a metal layer comprising silver and tungsten, comprising: providing a semiconductor substrate within a sputter deposition chamber; providing at least two targets within the chamber, one of the targets consisting essentially of silver, another of the targets consisting essentially of tungsten; and sputtering the targets using a sputtering gas comprising Xe under conditions effective to deposit a metal layer comprising silver and tungsten onto the semiconductor substrate. 36. The method of claim 35 wherein the sputtering gas consists essentially of Xe. 37. The method of claim 35 wherein the sputtering gas comprises Xe and Ar. 38. The method of claim 35 wherein the sputtering gas comprises Xe and at least one of Kr and Rn. 39. The method of claim 35 wherein the sputtering is effective to form the metal layer to consist essentially of silver and tungsten. 40. A sputtering method of forming a metal layer comprising silver and tungsten, comprising: providing a semiconductor substrate within a sputter deposition chamber; providing a target within the chamber comprising silver and tungsten; and sputtering the target using a sputtering gas comprising Xe under conditions effective to deposit a metal layer comprising silver and tungsten onto the semiconductor substrate. 41. The method of claim 40 wherein the sputtering gas consists essentially of Xe. 42. The method of claim 40 wherein the sputtering gas comprises Xe and Ar. 43. The method of claim 40 wherein the sputtering gas comprises Xe and at least one of Kr and Rn. 44. The method of claim 40 wherein the sputtering is effective to form the metal layer to consist essentially of silver and tungsten. 45.