Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/31
H01L-021/469
H01L-021/4763
출원번호
US-0579819
(2000-05-25)
발명자
/ 주소
Cheung, David
Yau, Wai-Fan
Mandal, Robert R.
출원인 / 주소
Applied Materials Inc.
대리인 / 주소
Moser, Patterson & Sheridan
인용정보
피인용 횟수 :
42인용 특허 :
131
초록▼
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adja
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3,or dimethylsilane, (CH3)2SiH2,and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.
대표청구항▼
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adja
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3,or dimethylsilane, (CH3)2SiH2,and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle. iloxanes In The Condensed Phase", Journal of Polymer Science: Polymer Letters Edition, vol. 19, pp. 369-374 (1981). Favia et al., "The role of substrate temperature and bias in the plasma deposition from tetramethysilane", Plasma Source Sci. Technol. 1 (1992) pp. 59-66. Kim et al., "Deposition of thermally stable, low dielectric constant fluorocarbon/SiO2 composite thin film", Appl. Phys. Lett., 69 (18), (Oct. 28, 1996) pp. 2776-2778. Loboda, et al., "Plasma-enhanced chemical vapor deposition of a-SiC:H films from organosilicon precursors", J. Vac. Sci. Techno. A 12(1), (Jan./Feb. 1994), pp. 90-96. Moriyama, et al., "Thermal Stability of SiNxCyFilms Prepared by Plasma CVD", Journal of the Ceramic Society of Japan 101 (7) (1993) pp. 757-783. Ducarroir, et al., "SiCN coatings prepared by PACVD from TMS-NH3-Ar system on steel", Journal de Physique IV, vol. 3 (Aug. 1993), pp. 247-253. Bunshah et al. (Ed.), Deposition Technologies For Films And Coatings, Developments and Applications, Noyes Publications (1982) pp. 339-367. McClatchie, et al., "Low Dielectric Constant O
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