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A laminated solar cell module comprises a front light transmitting support, a plurality of interconnected solar cells encapsulated by a light-transmitting encapsulant material, and an improved backskin formed of an ionomer/nylon alloy. The improved backskin has a toughness and melting point temperat

A laminated solar cell module comprises a front light transmitting support, a plurality of interconnected solar cells encapsulated by a light-transmitting encapsulant material, and an improved backskin formed of an ionomer/nylon alloy. The improved backskin has a toughness and melting point temperature sufficiently great to avoid any likelihood of it being pierced by any of the components that interconnect the solar cells.

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A laminated solar cell module comprises a front light transmitting support, a plurality of interconnected solar cells encapsulated by a light-transmitting encapsulant material, and an improved backskin formed of an ionomer/nylon alloy. The improved backskin has a toughness and melting point temperat

A laminated solar cell module comprises a front light transmitting support, a plurality of interconnected solar cells encapsulated by a light-transmitting encapsulant material, and an improved backskin formed of an ionomer/nylon alloy. The improved backskin has a toughness and melting point temperature sufficiently great to avoid any likelihood of it being pierced by any of the components that interconnect the solar cells. on-metal atoms, said eight transition metal atoms, and said two filling atoms being so selected with respect to each other that said solid-state compound is semiconducting or semimetallic. 3. A thermoelectric device as in claim 2, wherein said electrical circuit further comprises a DC power supply, operating to drive said electrical current to flow in a direction from said n-type thermoelectric material to said p-type thermoelectric material, thus resulting a transfer of thermal energy from said first substrate to said second substrate. 4. A thermoelectric device as in claim 2, wherein said electrical circuit further comprises a DC power supply, operating to drive said electrical current to flow in a direction from said p-type thermoelectric material to said n-type thermoelectric material, thus resulting in a transfer of thermal energy from said second substrate to said first substrate. 5. A thermoelectric device as in claim 2, wherein said first temperature of said first substrate is higher than said second temperature of said second substrate, said p-type thermoelectric material and said n-type thermoelectric material operating to transfer thermal energy from said first substrate to said second substrate and to generate said electrical current to in a direction from said n-type thermoelectric material to said p-type thermoelectric material. 6. A thermoelectric device as in claim 1, wherein said at least one thermoelectric material comprises: a plurality of metal atoms from at least one metal element; a plurality of non-metal atoms from at least one non-metal element; a crystal lattice structure, having a unit cubic cell comprised by said metal atoms and said non-metal atoms; and a plurality of filling atoms of at least one filling element disposed within said unit cubic cell, said one filling element being different from said metal element and said non-metal element, wherein said non-metal atoms, said metal atoms, and said filling atoms are selected with respect to one other to make the thermoelectric material semimetallic or semiconducting. 7. A thermoelectric device as in claim 6, wherein said unit cell includes: eight octants disposed relative to one other to form said unit cubic cell, twenty-four of said non-metal atoms to form six quadrilaterally planar rings with each being located in six of said eight octants, eight of said metal atoms, and two of said filling atoms disposed in two of said eight octants that are not occupied by said planar rings. 8. A thermoelectric device as in claim 7, wherein a first portion of said metal atoms is from a first metal element and a second portion of said metal atoms is from a second metal element that is different from said first metal element. 9. A thermoelectric device as in claim 8, wherein said first metal element and said second metal element are in the same row of the periodic table. 10. A thermoelectric device as in claim 8, wherein said first metal element and said second metal element are in the same column of the periodic table. 11. A thermoelectric device as in claim 8, wherein said first metal element is located in a different column and a different row from said second metal element in the periodic table. 12. A thermoelectric device as in claim 8, wherein said first metal element and said second metal element are selected to make said material exhibit the n-type conductivity. 13. A thermoelectric device as in claim 8, wherein said first metal element and said second metal element are selected to make said material exhibit the p-type conductivity. 14. A thermoelectric device as in claim 7, wherein said metal element is a transition metal element selected from elements in eighth, ninth, and tenth columns of the periodic table including iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, and platinum. 15. A thermoelectric device as in claim 7, wherein a first portion of said non-metal atoms is from a first non-metal element and a second