Formation of tungstein-based interconnect using thin physically vapor deposited titanium nitride layer
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/4763
H01L-029/12
출원번호
US-0881607
(2001-06-13)
발명자
/ 주소
Fortin, Vincent
출원인 / 주소
Mosel Vitelic Inc.
대리인 / 주소
Meetin, Ronald J.
인용정보
피인용 횟수 :
2인용 특허 :
24
초록▼
A tungsten-based interconnect is created by first providing a structure with an opening (464/470) in a structure and then rounding the top edge of the opening. A titanium nitride layer (150) is physically vapor deposited to a thickness less than 30 nm, typically less than 25 nm, over the structure a
A tungsten-based interconnect is created by first providing a structure with an opening (464/470) in a structure and then rounding the top edge of the opening. A titanium nitride layer (150) is physically vapor deposited to a thickness less than 30 nm, typically less than 25 nm, over the structure and into the opening. Prior to depositing the titanium nitride layer, a titanium layer (140) may be deposited over the structure and into the opening such that the later-formed titanium nitride layer contacts the titanium layer. In either case, the titanium nitride layer is heated, typically to at least 600° C., while being exposed to nitrogen and/or a nitrogen compound. A tungsten layer (160) is subsequently chemically vapor deposited on the titanium nitride layer and into the opening.
대표청구항▼
A tungsten-based interconnect is created by first providing a structure with an opening (464/470) in a structure and then rounding the top edge of the opening. A titanium nitride layer (150) is physically vapor deposited to a thickness less than 30 nm, typically less than 25 nm, over the structure a
A tungsten-based interconnect is created by first providing a structure with an opening (464/470) in a structure and then rounding the top edge of the opening. A titanium nitride layer (150) is physically vapor deposited to a thickness less than 30 nm, typically less than 25 nm, over the structure and into the opening. Prior to depositing the titanium nitride layer, a titanium layer (140) may be deposited over the structure and into the opening such that the later-formed titanium nitride layer contacts the titanium layer. In either case, the titanium nitride layer is heated, typically to at least 600° C., while being exposed to nitrogen and/or a nitrogen compound. A tungsten layer (160) is subsequently chemically vapor deposited on the titanium nitride layer and into the opening. t bonding object having a first electrode portion in a manner such that the resin coating covers the first electrode portion; forming an opening in the resin coating to expose the first electrode portion; forming a conductor in the opening; placing the first bonding object relative to a second bonding object having a second electrode portion in a manner such that the second electrode portion faces the conductor while the resin coating contacts the second bonding object; and bonding the first bonding object and the second bonding object by heat-treatment which causes the first electrode portion and the second electrode portion to be electrically connected with each other via the conductor while causing the resin coating to harden. 17. The process according to claim 16, wherein the conductor is melted for fusion to the first electrode portion and/or the second electrode portion in the bonding step. 18. The process according to claim 16, wherein the conductor is formed by electroplating and/or electroless plating. 19. The process according to claim 16, wherein the conductor has a laminate structure having a plurality of layers each made of a different metal. 20. The process according to claim 16, wherein at least apart of the conduct or has a melting point of 80-400° C. 21. The process according to claim 16, wherein the resin coating is photosensitive. 22. The process according to claim 16, wherein the resin coating is provided by a film. 23. The process according to claim 16, wherein the resin coating contains an inorganic filler at a proportion of 30-70 wt %. 24. The process according to claim 16, wherein the bonding step comprises pressing one of the first bonding object and the second bonding object against the other of the first bonding object and the second bonding object. 25. A process of making an electrode-to-electrode bond structure, comprising the steps of: forming a resin coating on a first bonding object having a first electrode portion in a manner such that the resin coating covers the first electrode portion; forming an opening in the resin coating to expose the first electrode portion; filling the opening with a bump forming material containing a metal; forming a bump at the opening by heating; placing the first bonding object relative to a second bonding object having a second electrode portion in a manner such that the second electrode portion faces the bump while the resin coating contacts the second bonding object; and bonding the first bonding object and the second bonding object by heat-treatment which causes the first electrode portion and the second electrode portion to be electrically connected with each other via the bump while causing the resin coating to harden. 26. The process according to claim 25, wherein the resin coating is photosensitive. 27. The process according to claim 25, wherein the resin coating is provided by a film. 28. The process according to claim 25, wherein the resin coating contains an inorganic filler at a proportion of 30-70 wt %. 29. The process according to claim 25, wherein the bonding step comprises pressing one of the first bonding object and the second bonding object against the other of the first bonding object and the second bonding object. 30. An electrode-to-electrode bond structure formed by the process according to any one of claims 1 through 29. 31. A process of connecting a first bonding object and a second bonding object, the first bonding object being provided with a first electrode portion and a resin coating which has an opening for exposing the first electrode portion but otherwise covers the first bonding object, the second bonding object being provided with a second electrode portion corresponding to the first electrode portion, the process comprising the steps of: filling the opening with a metal paste containing a metal; placing the first bonding object relative to the second bonding object in a manner such that the first electrode port ion faces the second electrode portion while the resin coating contacts the second bonding object; and bonding the first bonding object and the second bonding object by heat-treatment which causes the first electrode portion and the second electrode portion to be electrically connected with each other via the metal while causing the resin coating to harden. 32. A process of connecting a first bonding object and a second bonding object, the first bonding object being provided with a first electrode portion and a resin coating which has an opening for exposing the first electrode portion but otherwise covers the first bonding object, the second bonding object being provided with a second electrode portion corresponding to the first electrode portion, the process comprising the steps of: forming a conductor in the opening; placing the first bonding object relative to the second bonding object in a manner such that the first electrode portion faces the conductor while the resin coating contacts the second bonding object; and bonding the first bonding object and the second bonding object by heat-treatment which causes the first electrode portion and the second electrode portion to be electrically connected with each other via the conductor while causing the resin coating to harden. 33. A process of connecting a first bonding object and a second bonding object, the first bonding object being provided with a first electrode portion and a resin coating which has an opening for exposing the first electrode portion but otherwise covers the first bonding object, the second bonding object being provided with a second electrode portion corresponding to the first electrode portion, the process comprising the steps of: filling the opening with a bump forming material containing a metal; forming a bump at the opening by heating; placing the first bonding object relative to the second bonding object in a manner such that the second electrode portion faces the bump while the resin coating contacts the second bonding object; and bonding the first bonding object and the second bonding object by heat-treatment which causes the first electrode portion and the second electrode portion to be electrically connected with each other via the bump while causing the resin coating to harden. 34. A process of preparing an intermediate product used for making an electrode-to-electrode bond structure, comprising the steps of: forming a resin coating on a first bonding object having, a first electrode portion in a manner such that the resin coating covers the first electrode portion; forming an opening in the resin coating to expose the first electrode portion; and forming a conductor in the opening; wherein the resin coating is hardenable by heating. 35. A process of preparing an intermediate product used for making an electrode-to-electrode bond structure, comprising the steps of: forming a resin coating on a first bonding object having a first electrode portion in a manner such that the resin coating covers the first electrode portion; forming an opening in the resin coating to expose the first electrode portion; and filling the opening with a bump forming material containing a metal; wherein the resin coating is hardenable by heating. 36. An intermediate product prepared by the process according to claim 34 or 35. ion while the resin coating contacts the second bonding object. Finally, heat-treatment is performed to cause the first electrode portion and the second electrode portion to be electrically connected with each other via the metal while causing the resin coating to harden.
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이 특허에 인용된 특허 (24)
Cheng Kuo-Hsien,TWX ; Wang Ting-Chun,TWX, Barrier metal composite layer featuring a thin plasma vapor deposited titanium nitride capping layer.
Dixit Pankaj (Sunnyvale CA) Sliwa Jack (Los Altos Hills CA) Klein Richard K. (Mountain View CA) Sander Craig S. (Mountain View CA) Farnaam Mohammad (Santa Clara CA), Contact plug and interconnect employing a barrier lining and a backfilled conductor material.
Ameen Michael S. ; Hillman Joseph T. ; Webb Douglas A., Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation.
Fiordalice Robert W. (Austin TX) Olowolafe Johnson O. (Austin TX) Kawasaki Hisao (Austin TX), Method for forming a conductive interconnect in an integrated circuit.
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