초록 ▼

The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate

The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.

대표청구항 ▼

The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate

The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice. Mirror Cavity Facets", Jpn. J. Appl. Phys., vol. 35 (1996), p. L217-L220, Part 2, No. 2B, Feb. 15, 1996. S. Nakamura et al., "High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes", Jpn. J. Appl. Phys., vol. 36 (1997), p. L1059-L1061, Part 2, No. 8B, Aug. 15, 1997. F.L. Degertekin et al., "Single mode Lamb wave excitation in thin plates by Hertzian contacts", Appl. Phys. Lett. 69 (2), p. 146-148, Jul. 8, 1996. M. Shao et al., "Radio-frequency . . . ", Appl. Phys. Lett. 69 (2), p. 3045-3047, Nov. 11, 1996. S. Nakamura et al., "Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes", Appl. Phys. Lett. 69 (2), p. 4056-4058, Dec. 23, 1996. Suemune, Ikuo, "Doping in a superlattice structure: Improved hole activation in wide-gap II-VI materials," J. Appl. Phys. vol. 67, No. 5 (Mar. 1, 1990), pp. 2364-2369.