[특허]Probe contact system having planarity adjustment mechanism

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G01R-027/00
출원번호	US-0233963 (2002-09-03)
발명자 / 주소	Zhou, Yu Yu, David Aldaz, Robert Edward
출원인 / 주소	Advantest Corp.
대리인 / 주소	Muramatsu & Associates
인용정보	피인용 횟수 : 21 인용 특허 : 8

초록 ▼

A probe contact system is capable of adjusting distances between tips of the contactors and contact targets with simple and low cost mechanism. The probe contact system includes a contact substrate having a large number of contactors, a probe card for fixedly mounting the contact substrate for estab

A probe contact system is capable of adjusting distances between tips of the contactors and contact targets with simple and low cost mechanism. The probe contact system includes a contact substrate having a large number of contactors, a probe card for fixedly mounting the contact substrate for establishing electrical communication between the contactors and a test system, a probe card ring attached to a frame of the probe contact system for mechanically coupling the probe card to the frame, and a plurality of adjustment members for up/down moving the probe card relative to the probe card ring at three or more locations on the probe card. Each of the adjustment members is housed within a through hole formed on the probe card.

대표청구항 ▼

A probe contact system is capable of adjusting distances between tips of the contactors and contact targets with simple and low cost mechanism. The probe contact system includes a contact substrate having a large number of contactors, a probe card for fixedly mounting the contact substrate for estab

A probe contact system is capable of adjusting distances between tips of the contactors and contact targets with simple and low cost mechanism. The probe contact system includes a contact substrate having a large number of contactors, a probe card for fixedly mounting the contact substrate for establishing electrical communication between the contactors and a test system, a probe card ring attached to a frame of the probe contact system for mechanically coupling the probe card to the frame, and a plurality of adjustment members for up/down moving the probe card relative to the probe card ring at three or more locations on the probe card. Each of the adjustment members is housed within a through hole formed on the probe card. t response curve detected in said step (c) when said voltage is changed while said sample is irradiated with said laser beam, by comparing said variable-voltage current response curve to a current response curve from a failure-free site to thereby analyze the causes of failures. 9. The method according to claim 8, wherein said step (a) comprises the steps of: (a-1) scanningly irradiating said sample with said laser beam; and (a-2) fixedly irradiating a specific site of said sample with said laser beam, one of said steps (a-1) and (a-2) being selectively executed, and wherein said step (d) comprises the steps of: (d-1) determining a failure-containing region in which some form of failure occurs, based on a detection result obtained in said step (c) when said step (a-1) is executed; and (d-2) analyzing the cause of the failure in said failure-containing region, based on a detection result obtained in said step (c) when said voltage is changed while said failure-containing region is fixedly irradiated with said laser beam in said step (a-2). 10. The method according to claim 9, wherein said sample is irradiated with said laser beam which is intermittently intercepted in said step (a-2). 11. The method according to claim 9, wherein said current is detected in said step (c) at a plurality of timed instants after irradiation of said failure-containing region with said laser beam, said plurality of timed instants being respectively corresponding to time constants of said current, said time constants being different from each other in excitation source of carriers generated by the irradiation with said laser beam. 12. The method according to claim 8, wherein said analyzing identifies said defects in at least one of pn junctions, Schottky junctions, and metal interconnect lines. 13. A method of analyzing a failure, comprising the steps of: (a) irradiating a sample with a laser beam of a predetermined wavelength; (b) detecting a current generated in said sample as a result of the irradiation with said laser beam at a plurality of timed instants after the irradiation of said sample with said laser beam, said plurality of timed instants being respectively corresponding to time constants of said current, said time constants being different from each other in excitation source of carriers generated by the irradiation with said laser beam; and (c) analyzing a failure in said sample, based on detection results obtained in said step (b). 14. An apparatus for analyzing a failure, comprising: a laser beam generator configured to selectively generate a plurality of laser beams; a current detector configured to detect a current generated in a sample as a result of irradiation with said laser beams; and a failure analyzer configured to analyze a failure in said sample, based on a comparison between a plurality of detection results obtained from said current detector by irradiating said sample with said plurality of laser beams at respective different wavelengths and said wavelengths to identify defects in said sample by associating said defects with a combined current generated by said defects at said respective wavelengths. 15. The apparatus according to claim 14, wherein said laser beam generator comprises a plurality of laser beam sources for generating said plurality of laser beams, respectively. 16. The apparatus according to claim 14, wherein said laser beam generator comprises: a laser beam source configured to generate a laser beam of a predetermined wavelength; and a wavelength converter configured to convert said predetermined wavelength of said laser beam generated by said laser beam source to generate said plurality of laser beams. 17. The apparatus according to claim 14, wherein said plurality of laser beams include laser beams of about 1.1 μm, about 1.3 μm, and not less than 2.0 μm in wavelength, respectively. 18. The apparatus according to claim 14, further comprising a

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이 특허에 인용된 특허 (8) 인용/피인용 타임라인 분석

Bialobrodski Marian R. ; Lupan Marius R., Automatic probe card planarization system.
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Holmes Frederick J. (Houston TX), Completely wireless dual-access test fixture.
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Kasukabe Susumu,JPX ; Mori Terutaka,JPX ; Ariga Akihiko,JPX ; Shigi Hidetaka,JPX ; Watanabe Takayoshi,JPX ; Kono Ryuji,JPX, Connector and probing system.
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Eldridge Benjamin N. ; Grube Gary W. ; Khandros Igor Y. ; Mathieu Gaetan L., Method of planarizing tips of probe elements of a probe card assembly.
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Carney Eric Lane, Planarity verification system for integrated circuit test probes.
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Nakajima Hisashi,JPX ; Yoshioka Haruhiko,JPX, Probe apparatus with tilt correction mechanisms.
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Ryuji Kohno JP; Tetsuo Kumazawa JP; Makoto Kitano JP; Akihiko Ariga JP; Yuji Wada JP; Naoto Ban JP; Shuji Shibuya JP; Yasuhiro Motoyama JP; Kunio Matsumoto JP; Susumu Kasukabe JP; Terutaka , Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step.
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Carroll Keith C.,CAXITX L0N 1E0, Wireless test fixture.
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이 특허를 인용한 특허 (21) 인용/피인용 타임라인 분석

Chen, Ming-Kun; Lin, Yi-Lung, Active non-contact probe card.
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Hobbs,Eric D.; McCoy,Christopher D.; Porter, Jr.,James M.; Slocum,Alexander H., Adjustment mechanism.
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Cooper,Timothy E.; Eldridge,Benjamin N.; Reynolds,Carl V.; Shenoy,Ravindra Vaman, Apparatus and method for limiting over travel in a probe card assembly.
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Cooper,Timothy E.; Eldridge,Benjamin N.; Reynolds,Carl V.; Shenoy,Ravindra Vaman, Apparatus and method for limiting over travel in a probe card assembly.
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Xue, Ming; Kok, Weng Yew, Capacitive test device and method for capacitive testing a component.
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Brunner, Matthias; Kurita, Shinichi; Schmid, Ralf; Abboud, Fayez (Frank) E.; Johnston, Benjamin; Bocian, Paul; Beer, Emanuel, Configurable prober for TFT LCD array test.
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Kuitani, Tetsuya; Saito, Tadao; Abe, Yoshihiro, Contactor, contact structure provided with contactors, probe card, test apparatus, method of production of contact structure, and production apparatus of contact structure.
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Kuitani, Tetsuya; Saito, Tadao; Abe, Yoshihiro, Contactor, contact structure, probe card, and test apparatus.
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Garabedian, Raffi; Tea, Nim Hak; Wang, Steven; Karklin, Heather, Method of forming probe card assembly.
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Kuitani, Tetsuya; Saito, Tadao; Abe, Yoshihiro, Method of production of a contact structure.
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Martin,Michael H.; Crump,Brett, Planarity diagnostic system, e.g., for microelectronic component test systems.
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Karklin, Ken; Garaedian, Raffi, Planarizing probe card.
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Sporck, A. Nicholas; Shinde, Makarand S., Probe card with coplanar daughter card.
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Sporck,Alistair Nicholas; Shinde,Makarand S., Probe card with coplanar daughter card.
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Ismail, Salleh; Garabedian, Raffi; Wang, Steven, Probe head with machine mounting pads and method of forming same.
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Ismail,Salleh; Garabedian,Raffi; Wang,Steven, Probe head with machined mounting pads and method of forming same.
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Yoo, Jung-Sun; Jeong, Seong-Hoon, Substrate of probe card and method for regenerating thereof.
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[미국특허] Probe contact system having planarity adjustment mechanism 원문보기

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[미국특허] Probe contact system having planarity adjustment mechanism 원문보기

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